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    IXTH16N50D2 Search Results

    IXTH16N50D2 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXTH16N50D2
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 16A TO-247 Original PDF 5
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    IXTH16N50D2 Price and Stock

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    IXYS Corporation IXTH16N50D2

    MOSFET N-CH 500V 16A TO247-3
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    DigiKey IXTH16N50D2 Tube 218 1
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    Mouser Electronics IXTH16N50D2 1,037
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    Littelfuse Inc IXTH16N50D2

    Mosfet, N-Ch, 500V, 16A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:0V; Gate Source Threshold Voltage Max:-; Product Range:- Rohs Compliant: Yes |Littelfuse IXTH16N50D2
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    Newark IXTH16N50D2 Bulk 294 1
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    IXTH16N50D2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    t16n50

    Abstract: 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250
    Contextual Info: Advance Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 t16n50 16N50 depletion mode mosfet IXTH16N50D2 IXTT16N50D2 DS100261 S5250 PDF

    Contextual Info: IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 500V 16A 300mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±20


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-247) O-268 100ms 16N50D2 PDF

    t16n50

    Abstract: 16N50D2 IXTH16N50D2 IXTT16N50D2 DS100261
    Contextual Info: Preliminary Technical Information IXTH16N50D2 IXTT16N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 500V 16A 240mΩ Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTH16N50D2 IXTT16N50D2 O-247 O-268 O-247) O-247 100ms 16N50D2 t16n50 IXTT16N50D2 DS100261 PDF