DS0416 Search Results

Contextual Info: Flexibility & Innovation …. DS0416 V . 01 12/09/02 DATA S HEET TSF0868-02 868.39 MHZ SAW FILTER PRELIMINARY SPECIFICATION PACKAGE SMD5 PRODUCT F EATURES : Ø LOW LOSS 1.30 Typ. Ø SMALL SMD P ACKAGE Ø NARROW B AND 1.27 Typ. D 2.54 Typ. 5.00 ± 0.20 I/P

J593

Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
Contextual Info: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

RXD55

Abstract: RXD26
Contextual Info: Hardware Design Guide June 2004 STSI-144 Scalable Time-Slot Interchanger Hardware Design Guide Introduction Related Documents This document describes the hardware interfaces to Agere Systems Inc. scalable time-slot interchanger STSI-144 device. Information relevant to the use of

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

equivalent transistor PT 3500

Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

C15B material sheet

Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access

AGR21045E

Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf
Contextual Info: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

AGR21090

Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
Contextual Info: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband

AGR21045E

Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
Contextual Info: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

100B100JCA500X

Abstract: AGR19090E AGR19090EF AGR19090EU CDR33BX104AKWS JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

vp 2725

Abstract: JESD22-A114 LCK4310 LCK4310GF-DB LCK4310GF-DT MC100LVE310
Contextual Info: Data Sheet April 20, 2004 LCK4310 Low-Voltage PLL Clock Driver 1 Features • Output operating frequencies up to 1.25 GHz max. ■ 100 ps part–to–part skew. ■ 40 ps typical output–to–output skew. ■ Cycle-to-cycle jitter 5 ps max. ■ 3.3 V and 2.5 V compatible.

AGR21030E

Abstract: AGR21030EF AGR21030EU JESD22-C101A
Contextual Info: Preliminary Data Sheet May 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband