DS-300 75 V Search Results

Contextual Info: Tem ic DG535/536 Semiconductors 16-Channel Wideband Video Multiplexers Features • • • • • • • Crosstalk: -100 dB @ 5 MHz 300 MHz Bandwidth Low Input and Output Capacitance Low Power: 75 fiW Low r DS on : 50 Q On-Board Address Latches Disable Output

SMD resistor 334

Abstract: smd a7 SMD a7 47 Transistor SMD a7 Transistor RP03-0505SE RP03-0512SE RP03-0515SE RP03-1205SE RP03-1212SE RP03-1215SE
Contextual Info: Features Regulated Converters ● ● ● ● ● ● ● ● ● ● ● ● POWERLINE 2:1 Wide Input Voltage Range 3 Watts Regulated Output Power 1.6kVDC Isolation Also Available with Isolated Outputs, Output 1/Output 2 DS Isolation Low Profile, 10.2 mm Height

STP75NE75

Abstract: STP75NE75 MOSFET
Contextual Info: STP75NE75  N - CHANNEL 75V - 0.01Ω - 75A - TO-220 STripFET ” POWER MOSFET TARGET DATA TYPE STP75NE75 • ■ ■ ■ V DSS R DS on ID 75 V <0.013 Ω 75 A TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

STU309DH

Abstract: stu309 stu309d U309DH 309d TO-252-4L
Contextual Info: S T U309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )

stu312d

Abstract: pf 312D U312D To-252-4 stu312
Contextual Info: S T U312D S amHop Microelectronics C orp. Oct 08 2008 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -14A R DS (ON) ( m Ω )

tf 3621

Abstract: 1575R 3621 c 3621
Contextual Info: S T S 3621 S amHop Microelectronics C orp. Oct. 24 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 3A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -2A R DS (ON) ( m Ω )

stu309d

Abstract: stu309 s t u 309d U309D
Contextual Info: S T U309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID -30V -14A R DS (ON) ( m Ω )

stu409dh

Abstract: TO-252-4L stu409d
Contextual Info: S T U409DH S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 18A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

M8407

Abstract: STM8407
Contextual Info: S T M8407 S amHop Microelectronics C orp. J une.26,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -6A R DS (ON) ( m W )

STU310DH

Abstract: TO-252-4L stu310
Contextual Info: S T U310DH S amHop Microelectronics C orp. May,28,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 30V 19A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

STP75NE75

Abstract: STP75NE75FP
Contextual Info: STP75NE75 STP75NE75FP N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FP STripFET POWER MOSFET TYPE V DSS R DS on ID STP75NE75 STP75NE75FP 75 V 75 V < 0.013 Ω < 0.013 Ω 75 A 40 A • ■ ■ ■ TYPICAL RDS(on) = 0.01 Ω EXCEPTIONAL dv/dt CAPABILITY

Contextual Info: Advance Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A Ω ≤ 6.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

STU407D

Abstract: U407D TU407D
Contextual Info: S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W )

SQ48S08060

Abstract: SQ48S S15018-1 SQ48T04120 SQ48S15012 TR-332 SQ48S15033 SQ48S10050 SQ48T05080-NBA0 SQ48T/S04120
Contextual Info: SQ48 Series Data Sheet The new SemiQ Family of DC/DC converters from di/dt provides a high efficiency single output in a size that is only 60% of industry-standard quarter bricks, while preserving the same pinout and functionality. In high temperature environments, for output voltages ranging from 3.3 V to 1.0 V, the thermal performance of SemiQ™

STM831

Abstract: stm8316 STM-831 STM83
Contextual Info: S TM8316 SamHop Microelectronics Corp. Aug 20,2007 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m Ω P R ODUC T S UMMAR Y (P -C hannel) ) Max V DS S ID -30V -6A R DS (ON) ( m Ω )

2SK2554

Abstract: Hitachi DSA00108
Contextual Info: 2SK2554 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 4.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)

M8358S

Contextual Info: S T M8358S S amHop Microelectronics C orp. Oct.28, 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7.2A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S

160N10T

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 IXTA160N10T7 RDS on = 100 V = 160 A Ω ≤ 7.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET IXTH160N10T IXTQ160N10T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V

2SK3136

Abstract: DSA0037509 DSA003750 Hitachi DSA003750
Contextual Info: 2SK3136 Silicon N Channel MOS FET High Speed Power Switching ADE-208-696B Z 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB

2N0807

Abstract: IPP80N08S2-07 IPB80N08S2-07 IPI80N08S2-07 2n08 SMD diode 132A PG-TO263-3-2 SP0002-19048 SP0002-19043
Contextual Info: IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 7.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2n08l07

Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

irf120

Abstract: VN64GA oni 350 2N6658 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

PN08L07

Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
Contextual Info: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature