DS 205 Search Results

MIL-W-85

Abstract: WR340 half height flange wr 2300 flange waveguide GSK90-1-S GASKET Waveguide Gaskets WR340 waveguide directional coupler wr 90 directional coupler wr 2300 waveguide RCC42 wr 90 x band flange waveguide
Contextual Info: • RECTANGULAR WAVEGUIDE SECTION CONTENTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DS-101 DS-102 DS-103 DS-104 DS-105 DS-106 DS-107 DS-108 DS-109 DS-110 DS-111 Directional Couplers . .

DS3319

Abstract: SM-43T pl-7 DS30 DS40 PC05 PC30 PL-11 PL-13 PC2213H
Contextual Info: 84 SAMWHA ELECTRONICS POT CORES DS30~DS40 PC05~PC30 Ordering Code System PL-9 Material Core Type DS 4020 Core Size SAMWHA ELECTRONICS DS CORES DS3019D Part No. Type D2 D1 Dimensions in mm Core Set Parameters DS DS A 30.00 ±0.50 31.20 ±0.30 33.20 ±0.50 33.20 ±0.50

025n10n

Abstract: IPB025N10N3 IPB025N10N3 G IEC61249-2-21 JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

JESD22

Contextual Info: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature

025N10N

Abstract: IPB025N10N3 IPB025N10N3 G JESD22
Contextual Info: IPB025N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.5 mΩ ID 180 A • Extremely low on-resistance R DS(on) • High current capability

027N10N

Abstract: IPB027N10N3 IEC61249-2-21 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

027N10N

Abstract: IPB027N10N3 JESD22
Contextual Info: IPB027N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 2.7 mΩ ID 120 A • Very low on-resistance R DS(on) • 175 °C operating temperature

Contextual Info: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) • 150 °C operating temperature

030N10N

Abstract: IPP030N10N3 JESD22 PG-TO220-3 IPP030N10N3 G DSV80
Contextual Info: IPP030N10N3 G OptiMOS 3 Power-Transistor IPI030N10N3 G Product Summary Features V DS • N-channel, normal level 100 R DS on ,max • Excellent gate charge x R DS(on) product (FOM) V 3 ID mΩ 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

110-16F

Abstract: 110-12F 110-18F IXYS DSA 110-16F IXYS DSA 110-18F DO-205 110-08F DO205 ixys dsi DO30
Contextual Info: Rectifier Diodes DS 110 DSI110 IFRMS = 250 A Avalanche Diodes DSA110 DSAI110 IFAVM = 160 A VRRM = 800 - 1800 V VRSM VBRmin ① DO-205 AC VRRM Anode Cathode on stud on stud C A V V V 900 1300 - 800 1200 DS 110-08F DS 110-12F DSI 110-08F DSI 110-12F 1300 1700

IEC61249-2-21

Abstract: JESD22 PG-TDSON-8
Contextual Info: BSC205N10LS G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 20.5 mΩ ID 45 A • Very low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature

IPA030N10N3 G

Abstract: JESD22 75V10 DD-50 030n10n
Contextual Info: IPA030N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features V DS • N-channel, normal level • Excellent gate charge x R DS on product (FOM) 100 V R DS(on),max 3 mΩ ID 79 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

IXYS DSA 110-16F

Abstract: 110-16F IXYS DSA 110-18F 110-18F DO-205 IXYS DSA D-68623 DO30 110-08F 110-12F
Contextual Info: DS 110 DSA 110 Rectifier Diodes Avalanche Diodes V V 900 1300 1300 1700 1900 V - VRRM = 800 - 1800 V IF RMS = 250 A IF(AV)M = 160 A DO-205 AC V(BR)min ① V R R M V RSM DSI 110 DSAI 110 800 1200 Anode Cathode on on DS DS 1300 1200 1750 1600 1950 1800 stud

IXYS DSA 110-16F

Abstract: ds110
Contextual Info: □IXYS DS 110 DSA 110 Rectifier Diodes Avalanche Diodes 800 -1800 V 250 A 160 A RRM F RMS F(AV)M v RSM V V(BR)min V RRM V 900 1300 - 1300 1700 1900 -X- Anode \ V on stud ^ DSI 110 DSA1110 DO-205 AC Cathode •j" on stud DS DSA - 800 1200 DS 110-08F DS110-12F

ISS133

Abstract: M8305
Contextual Info: S T M8305 S amHop Microelectronics C orp. May,13 2005 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID

Contextual Info: OM4204SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS 100 AMP SCHOTTKY CENTER-TAP IN HERMETIC ISOLATED SIP PACKAGE 100 Amp, 45, 60 and 100 Volt Power Schottky Center-Tap Module FEATURES Two Isolated Schottky Rectifiers In A Hermetic SIP Package Very Low Forward Voltage

DS4020

Abstract: DS3319 DS4028 DS3324 33-2050 DS3319D PL-11 PL-13 DS4025 DS4025D
Contextual Info: SAMWHA ELECTRONICS DS CORES DS3019D Part No. Type D2 D1 Dimensions in mm Core Set Parameters DS DS A 30.00 ±0.50 31.20 ±0.30 33.20 ±0.50 33.20 ±0.50 B 9.40 ±0.15 9.45 ±0.15 7.10 ±0.15 9.40 ±0.15 C 20.30 ±0.30 20.30 ±0.30 23.70 ±0.30 23.70 ±0.30

Contextual Info: OM42Û4SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS 100 AMP SCHOTTKY CENTER-TAP IN HERMETIC ISOLATED SIP PACKAGE 100 Amp, 45, 60 and 100 Volt Power Schottky Center-Tap Module FEATURES Two Isolated Schottky Rectifiers In A Hermetic SIP Package Very Low Forward Voltage

OM4204SS

Contextual Info: OM4204SS/RS/DS OM4229SS/RS/DS OM4228SS/RS/DS 100 AMP SCHOTTKY CENTER-TAP IN HERMETIC ISOLATED SIP PACKAGE 100 Amp, 45, 60 and 100 Volt Power Schottky Center-Tap Module FEATURES • • • • • • • • • Two Isolated Schottky Rectifiers In A Hermetic SIP Package

JESD22

Abstract: DD-50 BSC100N10NSF GS8030
Contextual Info: BSC100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

100N10NS

Contextual Info: BSC100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)

sii861

Abstract: 19F590 SiI859 SiI-DS-0026-D 6Af amplifier
Contextual Info: SiI859 / SiI863 Data Sheet Silicon Image, Inc. Revision 1.2 May, 2002 SiI-DS-0026-D Silicon Image, Inc. SiI859 / SiI863 SiI-DS-0026-D Table of Contents Table of Contents . 2

100N10NS

Abstract: BSC100N10NSF IEC61249-2-21 JESD22
Contextual Info: BSC100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 10 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)

YMF724F-V

Abstract: YMF727 MPU401 Yamaha XG YAMAHA xg ymf YMF724F YMF724 yamaha ds1 xg midi synthesizer sound blaster
Contextual Info: YMF724F DS-1 OVERVIEW YMF724F DS-1 is a high performance audio controller for the PCI Bus. DS-1 consists of two separated functional blocks. One is the PCI Audio block and the other is the Legacy Audio block. PCI Audio block allows Software Driver to handle maximum of 73 concurrent audio streams with the Bus Master DMA engine.