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    100N10NS Search Results

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    100N10NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC100N10NSFGATMA1

    MOSFET N-CH 100V 11.4/90A 8TDSON
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    DigiKey () BSC100N10NSFGATMA1 Digi-Reel 5,159 1
    • 1 $2.63
    • 10 $1.69
    • 100 $1.16
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    BSC100N10NSFGATMA1 Cut Tape 5,159 1
    • 1 $2.63
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    BSC100N10NSFGATMA1 Reel 5,000
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    Avnet Americas BSC100N10NSFGATMA1 Reel 26 Weeks 5,000
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    Rochester Electronics BSC100N10NSFGATMA1 3,323 1
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    TME BSC100N10NSFGATMA1 5,000 5,000
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    Chip One Stop BSC100N10NSFGATMA1 Cut Tape 9,980 0 Weeks, 1 Days 1
    • 1 $2.41
    • 10 $1.55
    • 100 $1.02
    • 1000 $0.79
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    EBV Elektronik BSC100N10NSFGATMA1 27 Weeks 5,000
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    Vyrian BSC100N10NSFGATMA1 6,354
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    Infineon Technologies AG BSC100N10NSF G

    MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 2
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    Mouser Electronics BSC100N10NSF G 13,679
    • 1 $1.85
    • 10 $1.34
    • 100 $1.01
    • 1000 $0.81
    • 10000 $0.76
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    Infineon Technologies AG BSC100N10NSFGATMA1 (OPTIMOS 2)

    Mosfet, N-Ch, 100V, 90A, 150Deg C, 156W; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon BSC100N10NSFGATMA1
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    Newark BSC100N10NSFGATMA1 (OPTIMOS 2) Cut Tape 3,074 1
    • 1 $2.63
    • 10 $1.69
    • 100 $1.16
    • 1000 $0.94
    • 10000 $0.94
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    Infineon Technologies AG BSC100N10NSFGXT

    Transistors
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    Vyrian BSC100N10NSFGXT 1,239
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    100N10NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    100N10NS

    Abstract: BSC100N10NSF IEC61249-2-21 JESD22
    Contextual Info: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 10 mΩ • Optimized for dc-dc conversion ID 90 A • N-channel, normal level PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC100N10NSF IEC61249-2-21 100N10NS 100N10NS IEC61249-2-21 JESD22 PDF

    JESD22

    Abstract: DD-50 BSC100N10NSF GS8030
    Contextual Info: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC100N10NSF 100N10NS JESD22 DD-50 GS8030 PDF

    100N10NS

    Contextual Info: 100N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 10 mΩ ID 90 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		BSC100N10NSF 100N10NS 100N10NS PDF