DS 110T Search Results

n4111

Abstract: SICK distance sensor SICK m12 5 pins 60-P41111 WSG1-01 60-P31311 "IR distance Sensor" 60-P11121 60-P41311 N4121
Contextual Info: D i s t a n ce Sensor DS 60 T E C H N I C A L D E S C R I P T I O N Distance Sensor DS 60 Application Field The DS 60 distance sensors operate according to the principle of time of flight measurement. The compact sensor makes large and adjustable scanning distances possible with very precise distance detection.

sick DS 50

Abstract: DOS-1205-G BEF-WN-DS60 infrared power led 3w DOL-1205-G05M SICK distance sensor led SICK distance sensor gra101 DOL-1205-G10M 60-P41111-S03
Contextual Info: T E C H N I C A L D E S C R I P T I O N TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 1 DS 60 D i s t a n ce Sensor TB_DS60_en.QXP 27.07.2002 13:56 Uhr Seite 2 DS 60 Distance Sensor Application Field The DS 60 distance sensors operate according to the principle of time of flight

zilog 3651

Contextual Info: Zilog P RELIM IN A R Y P ro d u c t S p e c ific a tio n October 1988 Z320 CPU FEATURES • Full 32-bit architecture and implementation ■ 4G billion bytes of directly addressable memory in each of four address spaces ■ Linear or segmented address space

Zilog Z320

Abstract: TDA 120t zilog 3651 a1129 Z80000 Zilog Z80 family RLS07 Z320 Z8000 S7 TDC
Contextual Info: PRELIMINARY P ro d u c t S p e c ific a tio n October 1988 Z320 CPU FEATURES • Full 32-bit architecture and implementation ■ Regular use of operations, addressing modes, and data types in instruction set ■ 4G billion bytes of directly addressable m emory in each

transistor w2a 40

Abstract: xw4f 4500 microcomputer
Contextual Info: MITSUBISHI MICROCOMPUTERS 4551 Group SINGLE-CHIP 4-BIT CMOS M ICROCOMPUTER DESCRIPTION • LCD control circuit Segment Common o u tp u

13N06

Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
Contextual Info: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6

ET-180

Abstract: v669 Z08002 z0800206 Z0800106CMB fsjc HT-130 Z8001 Z8002 Z08002-10CMB
Contextual Info: 1 REVISIONS DATE DESCRIPTION LTR A Pages 1, 2, 3, 4, 14, 15, 16, editorial changes. Pages 5, 6 , 7, 8 , symbol corrections. Paqe 18, added vendor. B Add device type 03. Type 02 inac­ tive for new design: Use MIL-M-38510/52002 for case Q. Types 01 and new type 03 are still

crow mh 10 PIR

Abstract: BOSCH cross reference intellisense is310 PS-1523 RK815DT crow mh-10 7939WG k940 2707A-L Sentrol 6155
Contextual Info: Sensors Competitive Cross Reference Charts Magnetic Contacts Commercial Recess Mount Surface Mount Honeywell Honeywell ADEMCO IntelliSense Aleph GRI Sentrol/GE 7939WG 7939, 7939W, PR-20439 MPS20 7939-2 7939-2 - 7940 7940 943WG PAL-T 940 950 Tane DC2451, DC2451WG

LU-12 relay

Abstract: 3B2S diode rj A 0412 MOSFET 369A-10 AN569 J360 MTD2N20 MTD2N20-1 MTD2IM20
Contextual Info: MOTOROLA SC XSTRS/R F bfiE D fl OTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2N20 Designer's Data Sheet Pow er Field E ffe ct T ran sisto r N-Channel Enhancement-Mode Silicon Gate DPAK for Surface Mount or Insertion Mount TMOS POWER FETs 2 AMPERES RDStonl = 1 5 OHMS

Z0800106CMB

Abstract: Z0800210LMB z0800206 Z0800110 tfk 014 Z0800106 8000302QX tfk 648 U37W TFK BB
Contextual Info: 1 REVISIONS DATE DESCRIPTION LTR A Pages 1, 2, 3, 4, 14, 15, 16, editorial changes. Pages 5, 6 , 7, 8 , symbol corrections. Paqe 18, added vendor. B Add device type 03. Type 02 inac­ tive for new design: Use MIL-M-38510/52002 for case Q. Types 01 and new type 03 are still

FBA50AA50

Abstract: FCA50aa50 FCA50AB50 SF200AA10 SF150AA20 359RGA 10.7Mhz 15Khz crystal filter FBA50AA45 FBA75AA50 SF10
Contextual Info: 194 - I - v 'I o s N F E T S lfB / MOS ° MOS ° m m ° ? ' -* -< IV-? • < * -¥ tt » U L I S & g : No. E 7 6 1 0 2 (M) FET l< S / 2 S l* a S 2101*501 I 0(3>vw-l )V —(T]S S a i. fi m z V dss Voss m * D < a i) d (A ) (W ) T . Tch V ,. (& 3 ) (°C)

ttr01

Abstract: MG50D2DM1 H125 250V MG50G2DM1 MG30D1ZM1 MG30D2DM1 MG30D2YM1 MG30G2DM1 MG30G2YM1 MG50D2YM1
Contextual Info: V-ÿy-^xf •t ÿ i — it- ->'J3 MOS MOS FET F E T £ m s / 2 * !® o Hg/2flWB « M B » y 1- • ¡S M 7 ' zm-i 1 S ¿ ^ r - x é f t ( i « S á t i T l - '5 o 7 1; — * - f 7L- ■f ' - n — w DM 1 Dl , . ^ _ K2 o- w -K (C I) Oo -o \ \

MTP15N05E

Abstract: 221A-06 AN569
Contextual Info: M O T O R O L A SC X S T R S / R F bflE D • b 3 b ? 2 S 4 G G [ifl752 2ßl MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTP15N05E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ra n sis to r N-Channel Enhancem ent-Mode Silicon G ate

JD225005

Abstract: transistor c 3927 JD224505 ZD 103 ma BP107 vdo x10 VQS-15V
Contextual Info: P Ol i l E RE X m m 3=1E D INC a t M 7STMtiSl GG0MS12 S IPRX JD224505 JD2250Q5 K Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual FETMOD

MC68881

Abstract: MC68882 74X00 MC6882 MC68881RC16 SN 4931N M68000 8521 hmos MC68008 MC68020
Contextual Info: General Description Programming Model Operand Data Formats Instruction Set Coprocessor Programming Exception Processing Coprocessor Interface Instruction Executive Timing Functional Signal Descriptions Bus Operation Interfacing Methods Electrical Specifications

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

6BM8

Abstract: equivalent MG15G6EM1 st zo 607 2-48A3B
Contextual Info: - 206 - MOS w m m F E T £ 4 ff l/6 B M 8 EM-1 GM-1 + o—- f O 7 V —* - f n < - f f l 7 ? 7 .\-y firftz£ Z tm |- h i k SU GV ; h , i 3 J |1* *1 QU o 4 h i 1— 1 A\ 1*1 JVO-11 -OU 1 OX o i 1 V dss V GSS & U £ JI

68000l8

Abstract: 68000L12
Contextual Info: H D 6 8 0 0 0 HD68000-4. HD68000-6, HD68000-& HD68000-ia HD68000-12 H D 6 8 0 0 0 Y (HD68000Y4, HD68000Y6, HD68000Y8. H068000Y10. HD68000Y12) MPU (Micro Processing Unit) Advances in semiconductor technology have provided the capability to place on a single silicon chip a microprocessor at

mosfet J 3305

Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET
Contextual Info: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,

SMA2409M

Abstract: MN638S SSD103 SPF3004 sta464c spf0001 spf7211 relay Re 04501 sta509a SLA2402M
Contextual Info: 注意 ●本書に記載されている内容は改良などにより予告なく変更することがあります。 ご使用の際には最新の情報であることをご確認ください。 ●本書に記載されている動作例及び回路例は、使用上の参考として示したもので、

Motorola transistor 388 TO-204AA

Abstract: motorola mosfet BD357 Bd 357
Contextual Info: nOTOROLA SC XSTRS/R F bftE J> b3t.72SH 00^0^03 7G1 •110Tb m MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTM25IM10 Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate TM O S POWER FET 25 AMPERES R 0S (0n) = 0 075 O H M

Contextual Info: • ■ i n t e i r a p y T r [F ^E¥D1 I 80C188EA20, 16, 12 16-BIT HIGH INTEGRATION EMBEDDED PROCESSOR 80C188 Upgrade for Power Critical Applications Full Static Operation True CMOS Inputs and Outputs Integrated Feature Set — Static 186 CPU Core — Power Save, Idle and Powerdown

Contextual Info: • . ! [p [F § @ y g T [PiFSEW O i in t e l® 80C188EC-16 “13 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR ■ Full Static Operation ■ True CMOS Inputs and Outputs ■ - 40°C to + 85°C Operating Temperature Range Integrated Feature Set: — Low-Power, Static, Enhanced 8088

Contextual Info: HARRIS SEMICOND SECTOR 15 Ï Ë 1 4305271 001QS71, G 7=ff'/7V¿. 'T 1 HARRIS CMOS 16 Bit Microprocessor Features Pinout * • Compatible with NMOS 8086 • Completely Static CM OS Design ► D C to 5MHz 80C86 ► D C to 8MHz (80C86-2) • Low Power Operation