DRAM MODULE 30 PIN Search Results

Contextual Info: M IC R O N DRAM 256K X 8 MT2D2568 DRAM MODULE 256K x 8 DRAM FAST PAGE MODE (MT2D2568 _ MODULE IV IW L /lS k b . LOW POWER, EXTENDED REFRESH (MT2D2568 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Packages Leadless 30-pin SIMM Leaded 30-pin SIP • Power/Refresh

Contextual Info: |U |IC =R O N 4 MEG 4 MEG DRAM MODULE X MT9D49 9 DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-4) Vcc CAS DQ1 DQ 2

T2D19

Contextual Info: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM

MT3D49

Contextual Info: PRELIMINARY M IC R O N 4 MEG 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Leadless 30-pin SIMM 30-Pin SIMM (DE-6) V cc CAS DQ1 AO A1

Contextual Info: |U |C = R O N 4 MEG DRAM MODULE X 8 MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-3) Vcc CAS D01

Contextual Info: MT2D18 1 MEG X 8 DRAM MODULE M IC R O N 1 MEG DRAM MODULE X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process

MT4C4001

Abstract: CC3220
Contextual Info: I^ IIC Z R O N 1 MEG 1 MEG DRAM MODULE X X 8 MT2D18 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process

MT4C4M4

Contextual Info: 1» PRELIMINARY MICRON I 4 MEG SEIUCOMXJCTOA INC. X MT2D48 8 DRAM MODULE 4 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

RRH cl2

Abstract: 4c1024dj MT3D19 T3D19 MT301 MT3019
Contextual Info: 1 MEG X 9 DRAM MODULE SEMICONDUCTOR ihC. 1 MEG X 9 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 9mW standby; 625mW active, typical

T2D48

Abstract: L99D
Contextual Info: PRELIMINARY I^ IIC R O N 4 MEG 4 MEG DRAM MODULE X 8 X MT2D48 DRAM MODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply

256k 30-pin SIMM

Contextual Info: I^ IIC R O N 256K X MT3D2569 9 DRAM MODULE 256K X 9 DRAM DRAM MODULE FAST PAGE MODE MT3D2569 LOW POWER, EXTENDED REFRESH (MT3D2569 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CMOS silicon-gate process

Contextual Info: PRELIMINARY 4 MEG X 9 DRAM MOEDULE 5EM1CQHOUCTOR. IH£L 4 MEG DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

T3D19

Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
Contextual Info: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process

Contextual Info: ADVANCE 4 MEG DRAM MODULE 4 MEG X MT3D49 9 DRAM MODULE X 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line m emory module • High-perform ance CM OS silicon-gate process • Single 5V ±10% pow er supply • Low power, 12mW standby; 775mW active, typical

MT3D19

Abstract: MT3D mt4c1024d
Contextual Info: [M IC R O N 1 MEG DRAM MODULE 1 MEG X MT3D19 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CM OS silicon-gate process • Single 5V +10% pow er supply • Low power, 9mW standby; 625mW active, typical

MT4C4M4

Contextual Info: ADVANCE I^ IIC R O N 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 4 MEG x 9 DRAM FAST-PAGE-MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process • Single 5V ±10% power supply • Low power, 12mW standby; 775mW active, typical

T3D19

Contextual Info: M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE (MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line m em ory module • High-perform ance, CM OS silicon-gate process

micron mt9d

Abstract: 512-CYCLE
Contextual Info: |V |IC = R O I\J 1 MEG DRAM MODULE X MT9D19 9 DRAM MODULE 1 MEG x 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CM OS silicon-gate process

MT4C1024DJ

Contextual Info: [MICRON 1 MEG 1 MEG DRAM MODULE X X MT8D18 8 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT8D18 LOW POWER, EXTENDED REFRESH (MT8D18L) FEATURES • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

30 pin SIP dram memory

Contextual Info: MICRON MT8C8024 DRAM MODULE 1MEG x 8 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully TTL and

Contextual Info: MICRON 1 MEG DRAM MODULE 1 MEG X X MT9D19 9 DRAM MODULE 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CMOS silicon-gate process • Single 5V ±10% power supply

Contextual Info: MICRON TECHNOLOGY INC M ADVANCE IC R O N 4 MEG SSE T> m DRAM MODULE X MT3D49 9 DRAM MODULE b l l l S 4 tì 0004737 7TÔ • MRN 4 MEG x 9 DRAM - FEATURES • Industry standard pinout in a 30-pin, single-in-line m emory module • High-perform ance, CM OS silicon-gate process

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM594000A Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^<F decoupling capacitor Is mounted for each DRAM.

Contextual Info: MICRON MT8C9024 DRAM MODULE 1MEG x 9 DRAM LOW PROFILE DRAM FEATURES OPTIONS MODULE • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully T I L and