DRAM 4M X 8 Search Results

A43L4616

Abstract: RA12
Contextual Info: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM

hynix HY57V28820HCT-H

Contextual Info: HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev. 0.2 / Aug. 2001 1 HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory

K4S280832D

Contextual Info: K4S280832D CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280832D CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM

K4S280832M

Contextual Info: K4S280832M CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832M CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM

TAPC640

Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC b-cas 153 tss
Contextual Info: White Electronic Designs WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged

Contextual Info: HYUNDAI HYM584000 Series SEMICONDUCTOR 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.

Contextual Info: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM

Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M x 4 components 8-Mword x 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M x 16 & 4 pcs of 4M x 4 components)

CAPACITOR 64 680 4J

Abstract: 11DQ12 8dq9 Nippon capacitors
Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)

shz a30

Abstract: RA12 A43L4616
Contextual Info: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue September, 2004 0.1 Add Pb-Free package type July 28, 2005 Rev. No. July, 2005, Version 0.1 Remark

A43L4616AV-75F

Abstract: A43L4616A RA12
Contextual Info: A43L4616A 4M X 16 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary 0.1 Add Test Mode description August 13, 2008 0.2 Error Correction:

Contextual Info: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M X 36 DRAM SIMM Using 4M x16 & Q uad CAS 4M x4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B

UG44W6446HSG

Contextual Info: UG44W644 8 6HSG Data sheets can be downloaded at www.unigen.com 32M Bytes (4M x 64 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SODIMM based on 4 pcs 4M x 16 DRAM with LVTTL, 4K & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM

Contextual Info: HYM584000A M-Series •H Y U N D A I 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000A is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted for each DRAM.

HYM64V4045GU50

Abstract: GU50
Contextual Info: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM594000A Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^<F decoupling capacitor Is mounted for each DRAM.

Contextual Info: HYUNDAI SEMICONDUCTOR HYM594000 Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000 is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.

80NS70

Abstract: MC-428000A36BH MC-424000A8BA MC-424000A8
Contextual Info: NEC Li457S25 004flT7ti 13T • NECE DRAM SIMM Modules cont MODULE SIZE (INCH) ORGANIZATION FEATURES PINS HEIGHT 2M Fast-page access 72 1.000 4M 4M X X X 40 8 32 Fast-page access Fast-page access 30 72 0.799 1.000 1.250 4M X 36 Fast-page access 72 1.000 1.250

WED3DG644V-D2

Contextual Info: WED3DG644V-D2 32MB- 4M x 64 SDRAM UNBUFFERED FEATURES DESCRIPTION n PC100 and PC133 compatible The WED3DG644V is a 4M x 64 synchronous DRAM module which consists of four 4M x 16 SDRAM components in TSOP- 11 package and one 2K EEPROM in an 8- pin TSSOP package for

SL64U6C4M4E-A50V

Contextual Info: SL64U6C4M4E-A50V 4M X 64 Bits DRAM DIMM with EDO and Unbuffered FEATURES • Performance range: tCAC tRC tRAC 50ns • • • • • • • • GENERAL DESCRIPTION 15ns 84ns The SiliconTech SL64U6C4M4E-A50V is a 4M x 64 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM).

Z0301

Contextual Info: •HYUNDAI HYM53641 OB Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22pF decoupling capacitor is mounted for each DRAM.

IN2804

Contextual Info: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM532410 Series 4M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22,«F decoupling capacitor is mounted for each DRAM.

Contextual Info: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.