DRAM 168 PIN EDO 8MX8 Search Results

6480A6EGM4G09TB

Contextual Info: 8M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6480A6EGM4G09TB 168 Pin 8Mx64 EDO DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description Pin# The module is a 8Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 8Mx8 (TSOP) DRAM

Contextual Info: 8M x 64 Bit 3.3V BUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6480AsEDM4G10TK 168 Pin 8Mx64 EDO DIMM Buffered, 4k Refresh, 3.3V Pin Assignment General Description The 6480AsEDM4G10TK is a 8Mx64 bit, 10 chip, 3.3V, 168 Pin DIMM module consisting of (8) 8Mx8

Contextual Info: 8M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6480AsEGM4G09TJ 168 Pin 8Mx64 EDO DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 6480AsEGM4G09TJ is a 8Mx64 bit, 9 chip, 3.3V, 168 Pin DIMM module consisting of (8) 8Mx8

2a27

Abstract: 23A13 2464Y 41A32 443A
Contextual Info: 16M x 64 Bit 3.3V BUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6416AsEDM4G18TK 168 Pin 16Mx64 EDO DIMM Buffered, 4k Refresh, 3.3V Pin Assignment General Description The 6416AsEDM4G18TK is a 16Mx64 bit, 18 chip, 3.3V, 168 Pin DIMM module consisting of (16)

DS465

Abstract: 16Mx64 DIMM 1998
Contextual Info: 16M x 64 Bit 3.3V UNBUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 6416AsEGM4G17TL 168 Pin 16Mx64 EDO DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 6416AsEGM4G17TL is a 16Mx64 bit, 17 chip, 3.3V, 168 Pin DIMM module consisting of (16)

HYM5V72A1604

Contextual Info: HYM5V72A1604 F-Series Unbuffered 16Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 4K/8K-Refresh DESCRIPTION The HYM5V72A1604 is a 16M x 72-bit EDO mode CMOS DRAM module consisting of eighteen 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Contextual Info: HYM5V72A804A H-Series Buffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V72A804A H-Series is a 8Mx72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 TSOP and 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.1µF and

Contextual Info: HYM5V64804A F-Series Unbuffered 8Mx64 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V64804A F-Series is a 8Mx64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8 TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Dram 168 pin EDO 8Mx8

Contextual Info: «HYUNDAI • HYM5V64804 F-Series Unbuffered 8Mx64 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, 4K/BK-Refresh DESCRIPTION The HYM5V64804 is a 8M x 64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1uF and 0.01 nF

Contextual Info: HYM5V72A804A H-Series Buffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V72A804A H-Series is a 8Mx72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 TSOP and 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.1µF and

Contextual Info: HYM5V72A804A F-Series Unbuffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 3.3V, 4K/8K-Refresh DESCRIPTION The HYM5V72A804A F-Series is a 8Mx72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Dram 168 pin EDO 8Mx8

Contextual Info: -« H Y U N D A I • HYM5V64804 H-Series Buffered 8Mx64 btt CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, 4K/BK-Refresh DESCRIPTION The HYM5V64804 is a 8M x 64-bit EDO mode CMOS DRAM module consisting of eight 8Mx8 SOJ or TSOP and 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.1 (iF and

Contextual Info: -« Y U N D ftl • HYM5V72A804 F-Series Unbuffered 8Mx72 bit CMOS DRAM MODULE based on 8Mx8 DRAM, EDO, ECC, 4K/8K-Refresh DESCRIPTION The HVM5V72A804 is a 8M x 72-bit EDO mode CMOS DRAM module consisting of nine 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 (aF decoupling

Rv03

Contextual Info: - « Y U N P f t l • H Y M 5 V 6 4 1 6 0 4 F - S e r ie s Unbuffered 16Mx64 bit CMOS ORAM MODULE based on 8Mx8 DRAM, EDO, 4K/8K-Refresh DESCRIPTION The HYM 5V641604 is a 16M x 64-bit EDO mode CM OS DRAM module consisting of sixteen 8Mx8 SOJ or TSOP and one 2048-bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1^F and 0.01 nF

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

64mb edo dram simm

Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
Contextual Info: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt

LG 2MX32 EDO simm module

Abstract: GMM732201 GMM732411OCNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB 1 lMx8 1Mx9 I h r t 4Mx8 60ns • \GMM781000CNS-6 H GMM791000CNS-6 II 70ns 1— 1GMM781OOOCNS-7 1— 1GMM791000CNS-7 1 | | GMM784000CS-6 GMM794000CS-6 1— 1GMM784000CS-7 1— 1GMM794000CS-7 | \- 4Mx9 !Mx32

GMM732411

Abstract: GMM7362000 GMM732411OCNS OMM781000CNS
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB 4MB 60ns 70ns j !Mx8 OMM781000CNS-6 GMM781OOOCNS-7 1Mx9 GMM791000CNS-6 GMM79I OOOCNS-7 4Mx8 GMM784000CS-6 [ GMM784000CS-7 4Mx9 GMM794000CS-6 — I GMM794000CS-7 1MX32 GMM7321OOOCS/SG-6 GMM7321000CS/SG-7 GMM7321010CS/SG-6

m7401

Abstract: 1MX1 GMM732211OCMS M7641 GMM7324100cns 83CT 128MB 72-pin SIMM dram 72-pin simm 128mb
Contextual Info: MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns 1MB 4MB 60ns 70ns 1M x8 1GMM781000CNS-6 — | GMM781000CNS-7 1M x9 GMM791GOOCNS-6 J — I GMM791000CNS-7 4Mx8 GMM784000CS-6 4Mx9 GMM794000CS-6 1M x 32 H H GMM784000CS-7 GMM794000CS-7 I GMM7321OOOCS/SG-6 } I GMM732101OCS/SG-6

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: SO DIMM 100 Pin Connector Pinout "simm 72 pin" SO DIMM 72-pin 168-pin sdram dimm x64 edo dram 72-pin SO DIMM
Contextual Info: INFORMATION NOTE Presence Detect Assignments on SIEMENS Memory Modules 3.97 Weidlich, Technical Marketing Memories INFOMOD3.FRM MEMORY MODULES Overview: This information note describes the organisation and presence detect assignments used on the SIEMENS memory module families. The SIEMENS memory module families come with present

KM48V8004AK

Contextual Info: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F88 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: UG516W664 8 8HK(S)G 128M Bytes (16M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG516W664(8)8HK(S)G is a 16,777,216 bits by 64 EDO DRAM module. The UG516W664(8)8HK(S)G is assembled using 16 pcs of 8Mx8 4K/8K refresh DRAMs in a 32 pin 400

Contextual Info: UG58E644 8 8HK(S)G 64M Bytes (8M x 64) DRAM 168Pin DIMM based on 8M x 8 General Description Features The UG58E644(8)8HK(S)G is a 8,388,608 bits by 64 EDO DRAM module . The UG58E644(8)8HK(S)G is assembled using 8 pcs of 8Mx8 4K/8K refresh DRAMs in 400mil SOJ

Contextual Info: UG58W744 8 8HK(S)G 64M Bytes (8M x 72) DRAM 168Pin DIMM With ECC based on 8M x 8 General Description Features The UG58W744(8)8HK(S)G is a 8,388,608 bits by 72 EDO DRAM module With ECC. The UG58W744(8)8HK(S)G is assembled using 9 pcs of 8Mx8 4K/8K refresh DRAMs in a