DQODQ15 Search Results

tr8c

Abstract: TMS28F200
Contextual Info: TMS28F20ÛBZT, TMS28F200BZB 262144 BY 8-BIT/131072 BY 16-BIT BOOT-BLOCK FLASH MEMORIES SWS2dOO - JUNE 1 9 9 4 - REVISED SEPTEMBER 1997 • ■ I I I • • • • • • • • • • Organization . . . 262144 by 8 bits 131072 by 16 bits Array-Blocking Architecture

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

Contextual Info: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC

Video RAM

Abstract: TMS55165
Contextual Info: TMS55165 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS165B-AUGUST1992-flEVISED JANUARY 1993 DGH PACKAGEt TOP VIEW DRAM : 262 144 Words x 16 Bits SAM: 256 Words x 16 Bits Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

29LV641

Abstract: 29LV640D
Contextual Info: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards

Contextual Info: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked

Contextual Info: !» GEC P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION SEMICONDUCTORS DS3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY S u p e rs e d e s F e b ru a ry 1 9 9 2 ed itio n The P1480 LAN CAM is a 1K X 64-bit fixed-widlh CMOS Content-addressable Memory (CAM aimed at address

Contextual Info: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges

Contextual Info: T M S 551 60, T M S 551 61, T M S 551 70, T M S 5 5 1 71 2 6 21 44 BY 16-BIT M U L T IP O R T VIDEO RAMS S M V S 4 6 4 -MARCHI 996 + Organization: • 1 DRAM: 262144 Words S A M : 256 W o r d s • • x 16 B i t s D a t a f ro m t h e D R A M to O n e - H a l f o f t he

Contextual Info: an GEC PLESSEY JANUARY 1997 S E M I C O N D U C T O R S DS3112-3.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY Supersedes Septem ber 1993 edition - version 2 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address

29lv641

Contextual Info: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations

Contextual Info: 1,2 , 4 MEG X 32 DRAM SODIMMs MICRON I TECHNOLOGY INC SMALL-OUTLINE DRAM MODULE MT2LDT132H X (S) MT4LDT232H (X) (S) MT8LDT432H(X)(S) FEATURES • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual in-line memory module (DIMM) • 4MB (1 Meg x 32), 8MB (2 Meg x 32),

MT28F160S2

Contextual Info: ADVANCE I^ IIC R D N M T28F160S2 1 MEG x 16. 2 MEG x 8 FLASH M EM O R Y FLASH MEMORY 1 MEG x 16, 2 MEG x 8 S m a r t V o lt a g e SVT-II , SECTORED ERASE • • • • • • • • • • PIN ASSIGNMENT (Top View) Thirty-two 6 4 K B / (32K-word) erase blocks

Contextual Info: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.

Contextual Info: TMS464169, TMS464169P, TMS465169, TMS465169P 4194304 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMHSS66A -JUNE 1997- REVISED • Organization . . . 4194304 by 16 Bits • Single 3.3-V Power Supply ± 0.3 V Tolerance • Performance Ranges:

Contextual Info: TMS428160, TMS428160P 1 048 576-WORD BY 16-BIT HIGH-SPEED LOW VOLTAGE DYNAMIC RANDOM-ACCESS MEMORIES Organization . . . 1 048 576 x 16 DC PACKAGET TOP VIEW (TOP VIEW) Single 3.3-V Supply (±0.3V Tolerance) Performance Ranges: '428160/P-70 '428160/P-80 ACCESS ACCESS ACCESS READ OR

28F200BZ

Contextual Info: TMS28F200BZT, TMS28F200BZB 2097152-BIT BOOT-BLOCK FLASH MEMORY SMJS200B - JUNE 1994 - REVISED JUNE 1995 • Organization - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - One 128K-Byte Main Block - One 16K-Byte Protected Boot Block - Top or Bottom Boot Locations

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS826B - SEPTEMBER 1996 - REVISED OCTOBER 1987 * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • f • • Organization 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture

SMKS891

Abstract: DQ8001
Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SMKS891C- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section,

Contextual Info: SMJ416160, SMJ418160 1048576 BY 16-BIT DYNAMIC RANDOM-AGCESS MEMORIES _ SQ M S7200- APRH. 1.89».-. REVISED SEPTEMBER 1997 Organization . . . 1048576 by 16 Bits Single 5-V Power Supply ±10% Tolerance Performance Ranges: ACCESS ACCESS ACCESS TIME

TMS44165

Contextual Info: TMS44165, TMS44165P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS166A-SEPTEMBER1991-REVISED DECEMBER 1992 Organization . . . 262 144 x 16 Single 5-V Supply ±10% Tolerance Performance Ranges: A C C E S S A C C E S S A C C E S S R EA D OR

Contextual Info: TMS28F008Axy,TMS28F800Axy 1048576 BY 8-B1T/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES • Organization . . . • 1 1 • 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks