DQ71 Search Results

v801

Abstract: tc5165165
Contextual Info: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply

Contextual Info: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm

Contextual Info: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit

Contextual Info: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin

KM44V16100AK

Abstract: TIL 143 KM44V16000AK
Contextual Info: KMM372V1600AK/AS KMM372V1680AK/AS DRAM MODULE KMM372V1600AK/AS & KMM372V1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V160 8 0A is a 16M bit x 72 • Part Identification

smd JSs 13

Abstract: smd JSs smd JSs 99 VT244A smd JSs 75 DQ2Q-DQ23 3E2 material specification
Contextual Info: SIEM EN S 16M x 72-Bit Dynamic RAM EDO- Module E C C - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Inform ation • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 1 bank 16 M x 72 organisation

Contextual Info: O K I Semiconductor MSC23 T/P 1721 C -X X B S 2 0 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D1721C-xxBS20 is a fully decoded 1,048,576-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 an d four 2-Mb

HBT 01 - 01G

Abstract: DG20
Contextual Info: • O K I Semiconductor MSC23T/PV2720A-xxBS9 2,097,152-W ord x 72-B it DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/DV2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SO]

ACT-D16M96S

Abstract: BSA1 BS-B1
Contextual Info: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM

Contextual Info: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory

Contextual Info: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)

Contextual Info: 9S jo i. aßEd •JUSLUnOOp SII4 JO PU8 8 L|1 JE SUOISIAOjd 014 0} psfqns J8 L|pnj SI 8sn 'P8AJ8 S8J s;l|Bu UV 'uoijBJodjoQ |/\|g| 003 001- L& IZY p s s w s y 1-0-2898H17S 6Z I- 2LV 6Z 8 Z LUJUJLUJJJUJwUJUJUJUJJ U UUJiJLIJiiJLUJJJJJJJLJJJJJJJJJLÜJJJJJJJU^

Contextual Info: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation

Contextual Info: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F

Contextual Info: IBM11M32730B IBM11M32730C 32M x 72 DRAM MODULE Features • 32Mx72 Dual Bank Fast Page Mode DIMM System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 Vss/Vcc Pir|s) -4 Byte Interleave enabled -Buffered PDs • Performance:

Contextual Info: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)

Contextual Info: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time

Contextual Info: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate

Contextual Info: IBM13Q8734HCA 8M X 72 Registered SDRAM Module Features • 200-P in JE D E C Standard, R egistered 8-B yte Dual In-line M em ory M odule • A utom atic and controlled P recharge C om m ands • Program m able O peration: • 8M x 72 S ynchronous DRAM DIMM

Contextual Info: IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • 16Mx72 Extended Data Out EDO Mode DIMMs • System Performance Benefits: - Buffered inputs (except RAS, Data)

bi 72

Abstract: BI 344
Contextual Info: PANASONIC INDL/ELEK -CIO 72 69 328 52 PANASONIC dËJ 1^33*52 □DQ717M 5 1 72C 0 7 1 7 4 I N D L * ELECTRONIC LS TTL DN74LSS>U—X D DN74LS249/DN74LS249S - |- fr—* I I *-*J DN 74LS249/ DN 74LS249S B C D -to -7 -segment D ecorders/ D r iv e r s (with Open C ollector Outputs

sm 0038 tsop

Abstract: LV244A CDD assembly smd 3dm
Contextual Info: S IE M E N S 8M x 72-Bit Dynamic RAM EDO-Module ECC - Module HYM 72V8025GS-50/-60 HYM 72V8035GS-50/-60 168 pin buffered DIMM Module Prelim inary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 2 bank 8 M x 72 organisation

Contextual Info: O K I Semiconductor MSC23T/P1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION T he O K I M SC23T/D 1720C-xxBS18 is a fu lly decoded 1,048,576-w o rd x 72-bit C M O S D yn am ic R an d o m A ccess M e m o ry M o d u le com posed o f eighteen 4-Mb D R A M s 1 M x 4 in T S O P o r S O J