DQ33 Search Results

DQ33HS

Abstract: Desktop motherboard
Contextual Info: Material Declaration Datasheet Restriction on Hazardous Substances RoHS Compliance Manufacturer: Intel Corporation Equipment type: desktop motherboard Model designation: DQ33HS Date: 01 November 2007 Product weight: 589.5 grams Lead-free product: Lead-free Second Level Interconnect (SLI)

D42S4400

Abstract: NEC 424400
Contextual Info: N EC ELECTRONICS INC NEC Electronics Inc. b l E D • b4B7SB5 DQ33b3G T3? M N E C E pPD424400, 424400A/L, 42S4400A/L 1,048,576 X 4-Bit Dynamic CMOS RAM T - H í - X j » -/< ? Description Features The devices listed below are fast-page dynamic RAMs organized as 1,048,576 words by 4 bits and designed to

2N7314R

Abstract: FRL9430 2N7314
Contextual Info: HARRIS SEMICOND SECTOR g u HARRIS ^ HARRIS • •RCA “ ' °• ■ ° GE • MOE D ■ OBJECTIVE ° INTERSIL ° " 430E271 DQ33fl3S 1 Hi HAS 2N7314R, 2N7314H REG ISTRATIO N PENDIN G Available As FRL9430R, FRL9430H —r ^ x O . — r \ o , l - m 1 A ,-5 0 0 V

Contextual Info: 168-pin Low Profile ESDRAM DIMMs 32MB, 64MB, 128MB Preliminary Data Sheet Features Symbol Pin 85 Vss 127 Vss 86 DQ32 128 CKE0 S2# 87 DQ33 129 S3# DQMB2 88 DQ34 130 DQMB6 DQMB3 89 DQ35 131 DQMB7 48 DNU 90 Vdd 132 RFU 49 Vdd 91 DQ36 133 Vdd DQ5 50 NC 92 DQ37

Contextual Info: 168-pin Low Profile SDRAM DIMMs 32MB, 64MB, 128MB, 256MB, 512MB Preliminary Data Sheet Features Pin Symbol Pin Symbol Pin Symbol Pin 1 Vss 43 Vss 85 Vss 127 Vss 2 DQ0 44 DNU 86 DQ32 128 CKE0 3 DQ1 45 S2# 87 DQ33 129 S3# 4 DQ2 46 DQMB2 88 DQ34 130 DQMB6 5 DQ3

6408D

Abstract: U0-U15 6408DT
Contextual Info: Low Latency PC-133 HSDRAM 64MB, 128MB DIMM Preliminary Data Sheet Pin Symbol Pin Symbol Pin Symbol Pin Symbol Features 1 Vss 43 Vss 85 Vss 127 Vss • • 2 DQ0 44 DU 86 DQ32 128 CKE0 3 DQ1 45 S2# 87 DQ33 129 S3# 4 DQ2 46 DQMB2 88 DQ34 130 DQMB6 5 DQ3 47 DQMB3

64101ASEM4G05T

Contextual Info: 4M x 64 Bit PC-66 SDRAM DIMM PC-66 SYNCHRONOUS DRAM DIMM 64101ASEM4G05T 168 Pin 1Mx64 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment Pin# 1 Vss Pin# 85 Vss Pin# 43 Vss Pin# 127 Vss 2 DQ0 86 DQ32 44 NC 128 CKE0 3 4 DQ1 DQ2 87 88 DQ33 DQ34 45

TM4SN64EPN10

Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Contextual Info: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •

Contextual Info: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles

Contextual Info: TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3610B0AS/ASG is a 1,048,576 words by 36 bits dynamic RAM module which assembled 2 pcs of TC5118180AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 18 bits dynamic RAM module, by means

44460D

Abstract: BK36C-80
Contextual Info: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:

BC6MA

Abstract: thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70
Contextual Info: TOSHIBA THM3640F0BS/BSGW70 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ and 1 pc of TC5117440BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: TM124MBK36B, TM124MBK36R1 048 576 BY 36-BIT DYNAMIC RAM MODULE TM248NBK36B, TM248NBK36R 2 097152 BY 36-BIT DYNAMIC RAM MODULE S M M S 1 3 7 D - J A N U A R Y 1 9 9 1 - R E V IS E D J A N U A R Y 1993 * * * * * * * * * * Organization TM124MBK36B . . . 1 048 576 x 36

v801

Abstract: tc5165165
Contextual Info: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

TC514256

Contextual Info: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density

tc516

Contextual Info: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

Contextual Info: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs

Contextual Info: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

Contextual Info: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs

Contextual Info: 184PIN DDR333 Unbuffered DIMM 1024MB With 64Mx8 CL2.5 TS128MLD64V3J Description Placement The TS128MLD64V3J is a 64Mx64bits Double Data Rate SDRAM high-density Module for DDR333. The TS128MLD64V3J consists of 16pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil