FRL9430 Search Results

Contextual Info: FRL9430D3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

2N7314R

Abstract: FRL9430 2N7314
Contextual Info: HARRIS SEMICOND SECTOR g u HARRIS ^ HARRIS • •RCA “ ' °• ■ ° GE • MOE D ■ OBJECTIVE ° INTERSIL ° " 430E271 DQ33fl3S 1 Hi HAS 2N7314R, 2N7314H REG ISTRATIO N PENDIN G Available As FRL9430R, FRL9430H —r ^ x O . — r \ o , l - m 1 A ,-5 0 0 V

Contextual Info: FRL9430R2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: FRL9430H4 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: FRL9430D2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: FRL9430R3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: FRL9430H1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: FRL9430R1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

FRL9430

Contextual Info: HARRIS SEMICON] SECTOR MDE D fgi H A R R I S • RCA • • GE 43D2271 D033731 □ • HAS OBJECTIVE S E M I C O N D U C T O R HARRIS H —— INTERSIL FRL9430D 1A ,-5 0 0 V RDS on)=7.60n This Objective Data Sheet Represents the Proposed Device Performance.