DQ 51 Search Results

Contextual Info: HB56D25636B-85/10/12-262,144-Word x 36-Blt High Density Dynamic RAM Module Pin Name Pin No. Pin Name 1 ^ ss 37 D Q 17 2 DQo 38 DQ« 3 39 v ss 4 D Q ib DQ, 40 CASO 5 DQ„ 41 CÄS2 6 dq2 42 CÄS3 7 DQ20 DQ, 43 CASI 44 RÄSÖ NC Pin No. • DESCRIPTION

Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)

AS5SS256K36

Abstract: AS5SS256K36A 876-3210
Contextual Info: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES z z z z z z z z z z z OPTIONS MARKING DQ No. 1001 100-pin TQFP (DQ) (3-chip enable version, no indicator)

AS5SS256K36

Abstract: AS5SS256K36A 876-3210
Contextual Info: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001

Contextual Info: SU564648FD8NWFO January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWFO 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400B, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SB564648FD8NWFO 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400B, 31.75mm, 22Ω DQ termination,

U-564

Abstract: sg564648
Contextual Info: SU5646485D8NZCL September 23, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NZCL 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5646485D8NZCL 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination,

Contextual Info: SU564648FD8NWFN January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWFN 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SB564648FD8NWFN 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination,

sg564648

Contextual Info: SU5646485D8NZFN September 24, 2004 Ordering Information Part Numbers Description Module Speed SM5646485D8NZFN 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination. PC3200 @ CL 3.0 SB5646485D8NZFN 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 64Mx8 Based, DDR400C, 31.75mm, 22Ω DQ termination,

transistor cd 4400

Contextual Info: /3&0 /3& 6XSHU ,2 ZLWK +DUGZDUH 0RQLWRULQJ %ORFN %&#$ S S S S S S S S  9ROW 2SHUDWLRQ 6,2 %ORFN LV  9ROW 7ROHUDQW /3& ,QWHUIDFH $&3,  &RPSOLDQW DQ &RQWURO  )DQ 6SHHG &RQWURO 2XWSXWV   )DQ 7DFKRPHWHU ,QSXWV  3URJUDPPDEOH :DNHXS YHQW ,QWHUIDFH

SG564648FD8NWCL

Contextual Info: SU564648FD8NWCL January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWCL 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB564648FD8NWCL 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination,

Contextual Info: SU564648FD8NWCU January 12, 2005 Ordering Information Part Numbers Description Module Speed SM564648FD8NWCG 64Mx64 512MB , DDR, 200-pin SO-DIMM, Unbuffered, NonPC2100 @ CL 2.0, 2.5 ECC, 32Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination. SB564648FD8NWCG 64Mx64 (512MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR266A, 31.75mm, 22Ω DQ termination,

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS DQ 105°C Horizontal Mounting Type series Horizontal mounting version for φ20 ,φ22 and φ25. Suited for use in flat electronic devices where height space is limited. Adapted to the RoHS directive 2002/95/EC . DQ High Temperature

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS DQ Horizontal Mounting Type, Wide Temperature Range series Horizontal mounting version for φ 20, φ 22 and φ 25. Suited for use in flat electronic devices where height space is limited. DQ High Temperature DM Specifications

1500W resistor

Abstract: 12000W SPOT WELDERS 750W Wire wound resistor inductance
Contextual Info: TOKEN DQ Tubular Wirewound Power Resistors Wave-type Tubular Wirewound Power Resistors Wave-Shape Ribbon-Wound Design Neutralize Inductance Parasitoid DQ Preview Ribbon-Wound Power Resistor Construction: ● A tubular ceramic has two terminals, and is wound with a resistance element consisting of a

hb56d25609

Contextual Info: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module P in Name Pin No. 1 Vc c 16 2 CAS 17 Ag 3 DQo 18 NC 4 A« 19 5 A, 20 dq 6 D Q, 21 WE 7 A 2 22 V ss 8 A3 23 dq 9 V ss 24 NC 10 dq 11 a P in No. The HB56A25609 is a 256K x 9 dynamic RAM module, mounted

Allen-Bradley rack mounted

Abstract: Allen-Bradley cable pin 18042 Allen-Bradley rack
Contextual Info: Product Data Line Driver/Receiver Chassis AllenĆBradley Line Driver/Receiver Chassis Cat. No. 1772-DQ Product Data Introduction The Line Driver/Receiver Chassis (1772-DQ) is used with the Line Driver/Receiver Module (1772-DR) so you can extend the distance

Contextual Info: TOKEN DQ Tubular Wirewound Power Resistors Wave-type Tubular Wirewound Power Resistors Wave-Shape Ribbon-Wound Design Neutralize Inductance Parasitoid DQ Preview Ribbon-Wound Power Resistor Construction: ● A tubular ceramic has two terminals, and is wound with a resistance element consisting of a

DIODE Z54

Abstract: phase shifter digital phase shifter mhz 516 diode z512 ANALOG DIODE PHASE SHIFTER "Phase Shifter"
Contextual Info: SELECTION GUIDE SECTION 5 Phase Shifter Selection Guide SERIES SFP/PV-18 DQ, TA, TD, AQ AQ DQ TA TD PQ MQ QQ DP C l Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter Phase Shifter

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS DQ 105°C Horizontal Mounting Type series Horizontal mounting version for φ20 ,φ22 and φ25. Suited for use in flat electronic devices where height space is limited. Adapted to the RoHS directive 2002/95/EC . DQ Products which are scheduled to be discontinued.

KMM374S823BT-GL

Abstract: KMM374S823BT-G8 KMM374S823BT-GH KM48S8030BT-G MV 42H
Contextual Info: KMM374S823BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.

KMM366S424BT-GL

Abstract: CADD-30
Contextual Info: KMM366S424BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.

SX56

Contextual Info: SU5643285D8NWCL September 21, 2004 Ordering Information Part Numbers Description Module Speed SM5643285D8NWCL 32Mx64 256MB , DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination. PC2700 @ CL 2.5 SB5643285D8NWCL 32Mx64 (256MB), DDR, 200-pin SO-DIMM, Unbuffered, NonECC, 32Mx8 Based, DDR333B, 31.75mm, 22Ω DQ termination,

Contextual Info: Preliminary PC100 SDRAM MODULE KMM366S204CT Revision History Revision .2 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(lnputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T a = 23 °C, f = 1MHz, V

KMM366S824BT-G8

Abstract: KMM366S824BT-GH KMM366S824BT-GL
Contextual Info: KMM366S824BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.