DPAK2 Search Results

2SJ387

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: 2SK3147 L ,2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching HITACHI 1st. Edition February 1999 Features • Low on-resistance • • Rds = 0.1 Q. typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline DPAK-2 II

LM2981

Abstract: LM8117 lm2982 as2805 AS2936 LM2980 SOT-25 lm2980aim5x-x.x AMS1117 AME8807AEHA
Contextual Info: Cross Reference Competition Part Number AME Parts Package Pin to Pin Functions Remarks Champion NS NS ON Semiconductor CM2830 LM1117T-xx LM1117DTX-xx NCP5426xxxx AME8811 AME1117xCBT AME1117xCCT AME8832AEIVxxx SOT-89 TO-220 TO-252 SOT-25 þ þ þ ¨ ¨ ¨ ¨

2SJ388S

Abstract: Hitachi 2SJ Hitachi DSA001651
Contextual Info: 2SJ388 L , 2SJ388(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter

H7N0603DL

Abstract: H7N0603DS td 2003 ap A120A
Contextual Info: H7N0603DL, H7N0603DS Silicon N Channel MOS FET High speed power Switching REJ03G0123-0100Z Rev.1.00 Oct.14.2003 Features • Low on - resistance RDS on = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive Outline DPAK-2 D DPAK-S 4 4 G 1 2 3

Hitachi DSA00276

Contextual Info: 2SK2329 L , 2SK2329(S) Silicon N-Channel MOS FET ADE-208-1356 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

TRANSISTOR LWW 20

Abstract: a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
Contextual Info: AME, Inc. AME8800 / 8811 300mA CMOS LDO n General Description n Features The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-23, SOT-25, SOT-89 and

HAF1004

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TRANSISTOR a8800

Abstract: a8800 a8811 AME8800AEETY AME8800LEFT AME8800EEFT DS8800 AME8800 AME8800DEFT AME8800AEETZ
Contextual Info: AME, Inc. 300mA CMOS LDO AME8800 / 8811 n General Description n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.

2SK2334

Contextual Info: 2SK2334 L , 2SK2334(S) Silicon N-Channel MOS FET HITACHI ADE-208-385 1st. Edition Application H igh speed pow er sw itching Features • • • • • • Low on-resistance H igh speed sw itching Low drive current 4 V gate drive d evice can be driven from 5 V source

2sj332

Abstract: 2SJ332S
Contextual Info: 2SJ332 L , 2SJ332(S) Silicon P-Channel MOS FET HITACHI ADE-208-073 1st. Edition Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source •

2SJ38

Contextual Info: 2SJ387 L , 2SJ387(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • Low on-resistance • Low drive current • 2.5 V Gate drive device can be driven from 3 V Source • Suitable for Switching regulator, DC - DC converter

HAF1004

Abstract: ADE-208-629B
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BECS330

Abstract: AME8815AEBT330 sot223, 31 AME 385 transistor 8815A AEBT330 amplifier 2606 AEBT150 AEBT250 AEBT500
Contextual Info: AME, Inc. 1.5A CMOS LDO AME8815 n General Description n Functional Block Diagram The AME8815 family of linear regulators feature low quiescent current 45µA typ. with low dropout voltage, making them ideal for battery applications. It is available in D2PAK and TO-220 packages. The space-efficient

2SK3274

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

AME1117CCCT

Abstract: AME1117ACCT AME1117CCGT AME1117DCCT AME1117DCGT AME1117 AME1117ACBT AME1117ACGT AME1117BCCT AME1117BCGT
Contextual Info: AME, Inc. 1A Low Dropout Positive Voltage Regulator AME1117 ! General Description The AME1117 is a 1A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as while it

Contextual Info: AME, Inc. 1A Low Dropout Positive Voltage Regulator AME1117 n General Description n Functional Block Diagram The AME1117 is a 1A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as while it

a8800

Contextual Info: AME, Inc. AME8800 / 8811 n General Description 300mA CMOS LDO n Functional Block Diagram The AME8800/8811 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications.

Contextual Info: AME, Inc. 1A Low Dropout Positive Voltage Regulator AME1117 n General Description n Functional Block Diagram The AME1117 is a 1A low-dropout positive voltage regulator. It is available in fixed and adjustable output voltage versions. Overcurrent and thermal protection are integrated onto the chip. Output current will limit as while it

HAF2025-90STL

Abstract: HAF2025-90S HAF2025-90STR HAF2025S
Contextual Info: HAF2025 L , HAF2025(S) Silicon N Channel Power MOS FET Power Switching REJ03G0145-0300Z Rev.3.00 Apr.22.2004 Descriptions This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of

H5N2004DL

Abstract: H5N2004DS
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi DSA0076

Abstract: H5N2510DL H5N2510DS Silicon N Channel MOS FET High Speed Power Switching dpak code
Contextual Info: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1379 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2510DS G 1 2

Hitachi DSA0076

Abstract: H5N2505DL H5N2505DS Silicon N Channel MOS FET High Speed Power Switching dpak code
Contextual Info: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1376 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2505DS G 1 2