DO29 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: High-Speed DIO PCI/PCIe-7200 12 MB/s High-Speed 32-CH DI & 32-CH DO Cards Introduction ADLINK’s PCI/PCIe-7200 are high-speed digital I/O cards consisting of 32 digital input channels, and 32 digital output channels. High-performance designs and the state-of-the-art technology make these cards suitable for high-speed

LC89057W-VF4-E

Abstract: digital dts dolby 5.1 ic amplifier circuits dsp lsb modulation demodulation smoke detection using microcontroller A31CS LC89057W LC89057W-VF4 VCO 144mhz 7202-35 F1024
Contextual Info: Ordering number : ENN∗7202 CMOS IC LC89057W-VF4-E Digital Audio Interface Transceiver Preliminary Overview 2 Package Dimensions unit: mm SQFP48 7x ×7 -3163B [LC89057W-VF4-E] 36 25 37 24 48 13 1 1 Features 12 (0.5) 0.15 (1.5) (0.75) 1.7max Realization of the full demodulation function as the

IEC61937

Abstract: dsp lsb modulation demodulation RX6 40 Mhz CP-1201 DO15 WM8802 DI-41 249KHZ wm8802sc
Contextual Info: WM8802 w Digital Audio Interface Transceiver DESCRIPTION FEATURES • The WM8802 is a digital audio interface transceiver conforming to IEC 60958/61937 and EIAJ CP-1201. The device supports data sampling input rates of up to 192 kHz. Data input to the serial digital audio data input pin can also

S-4602A

Abstract: DO40 la 1837 DO13 DO14 DO15 DO63 S-4602 UM80 DO44
Contextual Info: S-4602A 64-bit THERMAL HEAD DRIVER The S-4602A is a CMOS thermal print head driver containing a 64-bit shift register and a latch. The 75 µm driver output pad pitch allows for high density mounting up to 300dpi. It can be used for general purpose because “H” or “L” can be selected for the latch and the driver

Contextual Info: SEC NEC Electronics Inc. MC-424256A36BH/FH 262,144 x 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The MC-424256A36BH/FH is a fast-page dynamic RAM module organized as 262,144 words by 36 bits and designed to operate from a single + 5-volt power sup­

AEN 6

Abstract: DO13 DO14 DO15 DO63 S-4612A DO-37
Contextual Info: Contents Features . 1 Block Diagram . 1 Operation. 2 Terminal Functions Refer to the dimensions

Contextual Info: PRELIMINARY 32K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, SINGLE-CYCLE DESELECT AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 4.5, 5,6, 7, 8 and 9ns Fast OE# access times: 4.5, 5 and 6ns

TQFP128-P-1414-0

Abstract: BUT30
Contextual Info: OKI Semiconductor MS81V32321 PEDSMS81V32321-02 Issue Date: Mar. 22, 2005 Preliminary 1,114,112-Word x 32-Bit Field Memory GENERAL DESCRIPTION The OKI MS81V32321 is a high performance 32-Mbit, 1,100K × 32-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

LC89056W

Abstract: LC89056 xmck 32kHz VCO DO52 3163B CP-1201 IEC60958 SQFP48 SQFP-48
Contextual Info: Ordering number : EN*8226 CMOS IC LC890561W Digital Audio Interface Receiver with Built-in Data Buffer Memory Overview The LC890561W is an audio LSI that synchronizes with the input signal and demodulates the signal into the normal format signal during data transmission between digital audio devices via the IEC60958 and EIAJ CP-1201.

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

Contextual Info: Embedded DRAM Cu-11 Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:

Contextual Info: OKI Semiconductor MS81V32321 PEDSMS81V32321-04 Issue Date: Feb. 24, 2006 Preliminary 1,114,112-Word x 32-Bit Field Memory GENERAL DESCRIPTION The OKI MS81V32321 is a high performance 32-Mbit, 1,100K × 32-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

transistor NEC D 882 p

Abstract: nec d 882 p datasheet SKR 50 a1275 MOS 6581 transistor NEC D 587 SI 356/2 diode nec d 882 p pwm Generator 2-423 NEC V30
Contextual Info: Design Manual CB-9 Family VX/VM Type Core Library 0.35 µm CMOS Cell-Based IC CBIC CPU Core, Memory Controller 78K/0 Core V851TM Core V853TM Core V30MXTM V30MZTM NB85E NB85E901 NB85ET NB85E500 NU85E500 NU85E502 Document No. A13195EJ5V1DM00 (5th edition)

BW002

Abstract: IBM "embedded dram" DRAM0512X8X256 554 CA3 embedded dram ibm 0.18 um CMOS parameters SA-27E DO255 BW255 DO000-DO291
Contextual Info: Embedded DRAM SA-27E Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:

Contextual Info: MITSUBISHI LS Is DRAM MODULE MH1 M32CDJ-5,-6,-7/ MH1 M32CNDJ-5,-6,-7 FAST PAGE MODE 33554432-BIT (1Û48576-WORD BY 32-BIT) DYNAMIC RAM DESCRIPTION The M H 1M 32C D J/C N D J a 1048576-w ord bv 32-bit dynamic RAM and consists o f eight industry standard 1M x 4-bit

Contextual Info: MITSUBISHI LS Is <DRAM MODULE M H4M724CTJ-6,-7 FAST PAGE MODE 301989888-BIT 4194304-WORD BY 72-BIT) DYNAMIC RAM DESCRIPTION The M H 4M 724C TJ is 4 1 94304-w ord x 72-bit dynamic RAM module. This consists o f eighteen industry standard 4M x 4 dynamic RAMs in TSOP and tw o industry standard input

DO52

Abstract: DO43 DO49 AEN 6 TRDO la 1837 seiko 64 s chip DO13 DO14 DO15
Contextual Info: Contents Features. 1 Block Diagram. 1 Operation . 2 Terminal Functions. 2

Contextual Info: Contents Features. 1 Block Diagram. 1 Terminal

1N3549

Abstract: 1N2482 IN2071 1N553 INI128 1N2070 1N3247 1N3245 1N33 1n256
Contextual Info: xemitran ffP IP P ftih v V P B M 5?E D • OOOOHT? fi semiconductors SemitronicsCorp. INTEX/ SEMITRONICS discrete devices CORP silicon rectifiers cont’d miniature axial lead silicon rectifiers DO-41 case style— t»m 1N3241 1N3242 1N3243 1N3244 1N3245 1N3246

KMM5361000

Abstract: KMM5361000/A
Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> • T ^ b M m s GülGSlb Ô KMM5361000 DRAM MODULES 'T - % iï~ n 1 M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5361000 is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung

J-L0011

Abstract: display counter block diagram 7 seg cc ELLS 110 T42LC wram
Contextual Info: ADVANCE M IC R O N ^ MT42LC256K32A1 256K x 32 WRAM SCmMXOKK WRAM FEATURES PIN ASSIGNMENT Top View • Dual-port organization: 256K x 32 D RA M port 128 x 16 SAM port • Extended Data-Out operation (tPC=20ns) - 200 megabyte per second data burst rate on D RAM

ld33 st

Abstract: st LD33 H7C4 ld33 3.3v h044 h1c4 data sheet ld33 c BIT3112 DO25 DO30
Contextual Info: MDS112CG 10/100 Mbps Ethernet Distributed Switch 1 Features • • • • • • • • • • • DS5439 12 10/100 Mbps Autosensing, Fast Ethernet ports with reduced MII interface Full wire speed Layer 2 Switching Internal Switch Database Memory supports up