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Contextual Info: Embedded DRAM Cu-11 Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:
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BW002
Abstract: IBM "embedded dram" DRAM0512X8X256 554 CA3 embedded dram ibm 0.18 um CMOS parameters SA-27E DO255 BW255 DO000-DO291
Contextual Info: Embedded DRAM SA-27E Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:
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sa-27e256-bit292-bit16-bit+9bw002ibm "embedded dramdram0512x8x256554 ca3embedded dram ibm0.18 um cmos parametersdo255bw255do000-do291
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4833
Abstract: IBM "embedded dram" SI10 cu-11 A03-A11 bsn15
Contextual Info: Embedded DRAM Cu-11 Embedded DRAM Functional Summary • Two configurations: x 256 or x 292 • 1 Mb to 16 Mb in 1 Mb increments - Multiple macros per chip for greater capacity or functional flexibility - Additional width for parity • Data I/O organization:
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cu-11256-bit292-bit16-bit+54833ibm "embedded dramsi10a03-a11bsn15
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icl 2822
Abstract: 1004CL 0398C BW002 CCGA 472 device dimensional details diode marking B4Z 0844C 4046 PLL Designers Guide AOI2222 2-bit comparator
Contextual Info: Preliminary ASIC Cu-11 Databook Notices: Before using this information and the product it supports, be sure to read the general information on the back cover of this book. Trademarks: The following are trademarks or registered trademarks of International Business Machines
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cu-11sa14-2449-00icl 28221004cl+80398cbw002ccga 472 device dimensional detailsdiode marking b4z0844c4046 pll designers guideaoi22222-bit comparator
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