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    DO-204AA PACKAGE Search Results

    DO-204AA PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54ACT825/QKA
    Rochester Electronics LLC 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP PDF Buy
    TPH1R306PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQH
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet
    TPHR8504PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet

    DO-204AA PACKAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MJ21294

    Abstract: MJ21294G
    Contextual Info: MJ21294 NPN Silicon Power Transistor With superior safe operating area performance, this power transistor is ideal for high temperature linear control circuits. Features • Exceptional Safe Operating Area • Dual Die Device with Standard 40 mil pins • Pb−Free Package is Available*


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    MJ21294 O-204AA MJ21294/D MJ21294 MJ21294G PDF

    mj15011

    Abstract: MJ-15011 MJ15012 MJ15011G MJ15012G
    Contextual Info: MJ15011 NPN , MJ15012 (PNP) Preferred Devices Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching


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    MJ15011 MJ15012 MJ15011 MJ15012 MJ15011/D MJ-15011 MJ15011G MJ15012G PDF

    2n3055

    Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
    Contextual Info: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


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    2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier PDF

    MJ15003 diagram

    Abstract: mj15003 MJ15003G MJ15004G MJ15003 MEX MJ15004 MJ15004 circuit MJ15003-D
    Contextual Info: MJ15003 NPN , MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON


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    MJ15003 MJ15004 MJ15003 MJ15004 MJ15003/D MJ15003 diagram MJ15003G MJ15004G MJ15003 MEX MJ15004 circuit MJ15003-D PDF

    Contextual Info: MJ15003 NPN , MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • • • • http://onsemi.com 20 AMPERE POWER TRANSISTORS


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    MJ15003 MJ15004 MJ15003 MJ15004 MJ15003/D PDF

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
    Contextual Info: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


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    2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055 PDF

    2N6341

    Abstract: 2N6338G 2N6338 2N6341G
    Contextual Info: 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage − VCEO sus = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341


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    2N6338, 2N6341 2N6338 2N6341 2N6338/D 2N6338G 2N6338 2N6341G PDF

    MJ15003 diagram

    Abstract: MJ15003 mj15004 TO-204AA transistor C2651 MJ15003 MJ15004 npn transistor TO-3 5 amp 140 volts MJ15004 circuit
    Contextual Info: MJ15003 NPN , MJ15004 (PNP) Preferred Device Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100% Tested) –


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    MJ15003 MJ15004 MJ15003 MJ15004 r14525 MJ15003/D MJ15003 diagram TO-204AA transistor C2651 MJ15003 MJ15004 npn transistor TO-3 5 amp 140 volts MJ15004 circuit PDF

    MV1650

    Abstract: DO-204AA motorola 902 MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 Motorola diodes
    Contextual Info: MOTOROLA Order this document by MV1626/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes MV1626 thru MV1650 These epitaxial passivated tuning diodes are designed for AFC applications in radio, TV, and general electronic–tuning. • Maximum Working Voltage of 20 V


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    MV1626/D MV1626 MV1650 204AA MV1650 DO-204AA motorola 902 MV1628 MV1630 MV1634 MV1638 MV1648 Motorola diodes PDF

    mj15011

    Abstract: MJ-15011 MJ15012
    Contextual Info: MOTOROLA Order this document by MJ15011/D SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices


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    MJ15011/D* MJ15011/D mj15011 MJ-15011 MJ15012 PDF

    MJ15003 MJ15004

    Abstract: motorola mj15003 MJ15003 Motorola MJ15003 MJ15004
    Contextual Info: MOTOROLA Order this document by MJ15003/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15003/D* MJ15003/D MJ15003 MJ15004 motorola mj15003 MJ15003 Motorola MJ15003 MJ15004 PDF

    MJ-15016

    Abstract: TRANSISTOR mj15020 MJ-15020 2N3055A MJ15015 MJ15016 MJ15018 MJ15019 MJ15020 MJ15021
    Contextual Info: MOTOROLA Order this document by MJ15018/D SEMICONDUCTOR TECHNICAL DATA MJ15015, MJ15016 See 2N3055A Advance Information NPN MJ15018 Complementary Silicon Power Transistors MJ15020* PNP MJ15019 . . . designed for use as high frequency drivers in Audio Amplifiers.


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    MJ15018/D* MJ15018/D MJ-15016 TRANSISTOR mj15020 MJ-15020 2N3055A MJ15015 MJ15016 MJ15018 MJ15019 MJ15020 MJ15021 PDF

    MJ413

    Abstract: MJ423 MOTOROLA TRANSISTOR mj423 motorola
    Contextual Info: MOTOROLA Order this document by MJ413/D SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and


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    MJ413/D* MJ413/D MJ413 MJ423 MOTOROLA TRANSISTOR mj423 motorola PDF

    2N3442 MOTOROLA

    Abstract: 2N3442 transistor 2n3442
    Contextual Info: MOTOROLA Order this document by 2N3442/D SEMICONDUCTOR TECHNICAL DATA 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and


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    2N3442/D* 2N3442/D 2N3442 MOTOROLA 2N3442 transistor 2n3442 PDF

    MV1404

    Abstract: Motorola diodes MV1403
    Contextual Info: MOTOROLA Order this document by MV1403/D SEMICONDUCTOR TECHNICAL DATA Silicon Hyper-Abrupt Tuning Diodes MV1403 MV1404 MV1405 These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning


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    MV1403/D MV1403 MV1404 MV1405 MV1404 Motorola diodes MV1403 PDF

    2n3055 motorola

    Abstract: motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501
    Contextual Info: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501*


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    MJ2500 MJ2501 MJ3000 MJ3001 MJ2500/D* MJ2500/D 2n3055 motorola motorola MJ3000 transistor mj3001 mj3000 npn darlington transistor 150 watts MJ3000 circuit 100 amp npn darlington power transistors 2N3055A 2n3055 MJ2500 MJ2501 PDF

    npn darlington transistor 150 watts

    Abstract: transistor mj3001 MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR NPN bipolar junction transistors max hfe 2000 MJ2501 MJ3001 transistor MJ2501 MJ3001 motorola transistor mj3001 to-3
    Contextual Info: MOTOROLA Order this document by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN Medium-Power Complementary Silicon Transistors MJ3001 Motorola Preferred Devices . . . for use as output devices in complementary general purpose amplifier applications. 10 AMPERE


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    MJ2501/D MJ2501 MJ3001 npn darlington transistor 150 watts transistor mj3001 MOTOROLA POWER TRANSISTOR MOTOROLA TRANSISTOR NPN bipolar junction transistors max hfe 2000 MJ2501 MJ3001 transistor MJ2501 MJ3001 motorola transistor mj3001 to-3 PDF

    2N5038

    Abstract: 2N5039 1N4933
    Contextual Info: MOTOROLA Order this document by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038* 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide–band amplifiers and power oscillators in


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    2N5038 2N5039 1N4933 2N5038/D* 2N5038/D 2N5038 2N5039 1N4933 PDF

    NPN 200 VOLTS POWER TRANSISTOR

    Abstract: MJ15002 200 watts audio amp power transistors transistor tl 187 MJ15001 motorola MJ15001
    Contextual Info: MOTOROLA Order this document by MJ15001/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15001/D* MJ15001/D NPN 200 VOLTS POWER TRANSISTOR MJ15002 200 watts audio amp power transistors transistor tl 187 MJ15001 motorola MJ15001 PDF

    TO4A

    Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–204 TO–3 CASE 1–07 ISSUE Z DATE 05/18/1988 SCALE 1:1 A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY.


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    204AA TO4A PDF

    MOTOROLA MJ15024

    Abstract: MOTOROLA MJ15022 mj15024 motorola MJ15022 MJ15024
    Contextual Info: MOTOROLA Order this document by MJ15022/D SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15022/D* MJ15022/D MOTOROLA MJ15024 MOTOROLA MJ15022 mj15024 motorola MJ15022 MJ15024 PDF

    MOTOROLA MJ15025

    Abstract: transistor MJ15025 motorola power device MJ15023 MOTOROLA MJ15023 MJ15025
    Contextual Info: MOTOROLA Order this document by MJ15023/D SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15023/D* MJ15023/D MOTOROLA MJ15025 transistor MJ15025 motorola power device MJ15023 MOTOROLA MJ15023 MJ15025 PDF

    Contextual Info: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


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    2N3055/D* 2N3055/D PDF

    NPN Transistor 2N3055 darlington

    Abstract: 2N3055 MOTOROLA 2N6576 2N3055* motorola 2N3055 2N6577 2N6578
    Contextual Info: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •


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    2N6576/D* 2N6576/D NPN Transistor 2N3055 darlington 2N3055 MOTOROLA 2N6576 2N3055* motorola 2N3055 2N6577 2N6578 PDF