DMP2100U Search Results

U-WLB1515-9

Contextual Info: DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits BVD1D2 RD1D2 ON ID1D2 TC = 25°C -20V 100mΩ @ VGS = -4.5V -4.0 A • • • • • • • Low Qg & Qgd Dual PMOS in common-source configuration Small Footprint 1.5-mm x 1.5-mm

Contextual Info: DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Product Summary Features and Benefits BVD1D2 RD1D2 ON ID1D2 TC = 25°C -20V 100mΩ @ VGS = -4.5V -4.0 A • • • • • • • Low Qg & Qgd Dual PMOS in common-source configuration Small Footprint 1.5-mm x 1.5-mm

Contextual Info: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V • • • • • • • • ID TA = 25°C -4.3A -4.0A -2.8A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits BVD1D2 RD1D2 ON ID1D2 TC = +25°C • Low Qg & Qgd  Dual PMOS in Common-Source Configuration -20V 100mΩ @ VGS = -4.5V -4.0 A  Small Footprint 1.5-mm x 1.5-mm

dmp2100u

Abstract: 35P marking DMP2100U-7
Contextual Info: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V BR DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V • • • • • • • • ID TA = 25°C -4.3A -4.0A -2.8A Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

DMN63D8L

Contextual Info: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

Contextual Info: DIO 4469 Why Diodes - MOSFET2_- 09/10/2014 01:05 Page 1 WHY DIODES – MOSFET2 Why DIODES? MOSFETs Extensive Portfolio Extensive MOSFET Portfolio Broad portfolio from small-signal to power MOSFETs Single, dual, complementary and H-Bridge Quad products BVDSS voltage ratings from 12 to 650V