DMOS TRANSISTORS Search Results

Contextual Info: L6207Q DMOS dual full bridge driver Datasheet - production data Description The L6207Q device is a DMOS dual full bridge driver designed for motor control applications, realized in BCDmultipower technology, which combines isolated DMOS power transistors with

DN2640

Abstract: DN2640N3 DN2640ND
Contextual Info: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven

Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing

transistor s70

Abstract: Marking S70 pin
Contextual Info: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage

voltage drop circuit from 220V to 10V

Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
Contextual Info: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This

D4710

Contextual Info: 100MHz CMOS/DMOS Wideband Quad Analog Switch CORPORATION CWB201 FEATURES DESCRIPTION APPLICATIONS Designed for RF and Video Switching the CWB201 is manufactured using Calogic’s high speed CMOS combined with DMOS transistors in a monolithic design resulting in

DN5m

Abstract: sot-89 marking dn
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

125OC

Abstract: TN1504 TN1504NW TN1506 TN1506NW TN1510 TN1510NW
Contextual Info: TN1504/TN1506/TN1510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s

DN3545N8-G

Abstract: DN3545 DN3545N3 DN3545N3-G DN3545N8
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

125OC

Abstract: TN1504 TN1504NW TN1506 TN1506NW TN1510 TN1510NW
Contextual Info: TN1504/TN1506/TN1510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s

DSFP-DN3545

Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

VN3205N6

Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination

siemens fet to92

Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Contextual Info: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

MOSFET 400V

Abstract: P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage
Contextual Info: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the

DN2540

Abstract: DN2540N5 DN2540N5-G DN2535 DN2535N3 DN2535N3-G DN2535N5 DN2535N5-G DN2540N3 DN2540N3-G
Contextual Info: DN2535/DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Features ► ► ► ► ► ► General Description The Supertex DN2535 and DN2540 are low threshold depletionmode normally-on transistors utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

Contextual Info: 100MHz CMOS/DMOS Wideband QuadAnalog Switch CORPORATION CWB201 FEATURES DESCRIPTION • • • • • • • Designed for RF and Video Switching the CWB201 is manufactured using Calogic’s high speed CMOS combined with DMOS transistors in a monolithic design resulting in

Contextual Info: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors

N-Channel Enhancement-Mode Vertical DMOS FETs

Abstract: 2N7008
Contextual Info: 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 7.5Ω 500mA Order Number / Package TO-92 2N7008 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package 500V 60Ω 150mA VN0550N3 TO-92 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a

Contextual Info: TB67H301FTG TOSHIBA Bi-CDMOS Integrated Circuit Silicon Monolithic TB67H301FTG Full-Bridge DC Motor Driver IC The TB67H301FTG is a full-bridge DC motor driver with DMOS output transistors. The low ON-resistance DMOS process and PWM control enables driving DC motors with high thermal efficiency.

tp5aw

Abstract: TP2510 TP2510N8-G TP2510ND
Contextual Info: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: Supertex inc. VN0808 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ p Order Number / Package " d S ON 'tXON) (max) (min) TO-92 1.5A VN0808L 80V 4.on Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a

Contextual Info: TB6640AFTG TOSHIBA Bi-CDMOS Integrated Circuit Silicon Monolithic TB6640AFTG Full-Bridge DC Motor Driver IC The TB6640AFTG is a full-bridge DC motor driver with DMOS output transistors. The low ON-resistance DMOS process and PWM control enables driving DC motors with high thermal efficiency.