DM2213 Search Results

Contextual Info: Enhanced IVfemoiy Systems be. DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features A rchitecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four s tiv e s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

Contextual Info: F n h fl n rp H DM2203/2213 Multibank EDOEDRAM 5 1 2 K b * 8 Product Specification H Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Ftegister for 12ns Random Writes and Burst Writes

gigabyte 945

Abstract: D0-35 30 pin 9-bit simm memory
Contextual Info: Enhanced Memory Systems Inc. Features DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Architecture The DM512K36ST6 achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a

U10A-14

Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Contextual Info: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

PJ 52

Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Contextual Info: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

Contextual Info: Enhanced Memory Systems Inc. DM512K32SmM512K36STBMultibankEDO 512Kbx 32/512Kbx 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four Actives Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

Contextual Info: I A V ^ p M T R O N DM2203/2213 EDRAM 512Kb x 8 Enhanced Dynamic RAM rnú^yüMshest _ features H SKIm SRAM Cache VU'itKin lor I ins Random Reads Y\ ithin lo llr Active Pali's • fast t.Mbit DRAM Arra\ lor ,i 5i i s Access to \n\ New Page ■ Write Posting Register for 15ns Random Writes and Durst Writes

Contextual Info: Enhanced IVfemoiy Systems Inc. DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four stive s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page

U23C-36

Contextual Info: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

U1615

Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Contextual Info: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page

edram

Contextual Info: DM2203/2213EDRAM 512Kbx 8 Enhanced Dynamic RAM F ^ M T R O N Preliminary Datasheet Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four Active Pages ■ Fast 4Mbit DRAM Array for 35ns Access to Any New Page ■ Write Posting Register for 15ns Random Writes and Burst Writes

OFW k 2950

Contextual Info: Enhanced Memory Systems Inc. DM2203/2213MultibankEDOEDRAM 512Kbx 8 EnhancedDynamic RAM Product Specification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page

IBM025161LG5D60

Abstract: gm72v16821 MD908 KM48S2020 TC59R1809 GM72V1682 KM4232W259Q60 KM416S1120A IBM025171LG5D-70 KM44S4020AT
Contextual Info: Fujitsu Microelectronics Inc. Hitachi America Ltd. Hyundai Electronics America Inc. IBM Microelectronics LG Semicon America Inc. formerly Goldstar Mitsubishi Electronics America Inc. NEC Electronics Inc. Micron Technology Inc. Mosel Vitelic Inc. MoSys Inc.

ESI 2160

Abstract: u332 U11B2 cqx 87 u918
Contextual Info: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page

A838A

Contextual Info: ^007547 00Q0Q45 E C n h l l l i a n a i ^ l U A i U U l D M 2 2 0 3 / 2 2 1 3 5 1 2 K b x 8 M u lt i b a n k E n h a n c e d D bS; E D y n a m O E D ic R A R A M M PrelminaryDatasheet Memory Systems Inc. Features • 8Kbit SRAM Cache Memory for 15ns Random Reads Within Four

D0-35

Contextual Info: DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM512K36ST achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a multi-layer substrate. Four

Contextual Info: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page