DK 53 CODE TRANSISTOR Search Results

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

BA2rc

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

BA1 K11

Abstract: ba1d1a PD48576118FF-E24-DW1-A
Contextual Info: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

SWITCH 255SB

Abstract: MA05-2 pin header nanoLOC TRX Transceiver user guide nanoLOC nanoLOC Development d-sub F09HP all stk ic diagram crystal 7.3728MHz zigbee based mini projects tsl2561t
Contextual Info: nanoLOC Development Kit User Guide Version 1.03 NA-06-0230-0402-1.03 Document Information nanoLOC Development Kit User Guide Document Information Document Title: nanoLOC Development Kit User Guide Document Version: 1.03 Published yyyy-mm-dd : 2007-02-27 Current Printing:

ks 213 b

Abstract: AMD fm2 Pin Package IC818 LCD 1620 uPD1723 LCD KS 108 PD1723GF-013 LCD 1620 datasheet LCD display 1602 car radio 14x20
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD1723GF-013, µPD1723GF-213 PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM/MW/LF TUNER CAR AUDIO The µPD1723GF-013 and µPD1723GF-213 are CMOS LSI developed for worldwide PLL frequency synthesizer FM/MW/LW tuner use.

LLDRAM

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

LM8327

Contextual Info: LM8327 Mobile I/O Companion Supporting Keyscan, I/O Expansion, PWM, and ACCESS.bus Host Interface 1.0 General Description The LM8327 GenI/O-Expander and Keypad Controller is a dedicated device to unburden a host processor from scanning a matrix-addressed keypad and to provide flexible and general purpose, host-programmable input/output functions.

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

DK97

Abstract: RLDRAM J2/GS4576C09GL-24I
Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

J2/GS4576C09GL-24I

Contextual Info: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

LCD12

Abstract: Car FM tuner car radio 14x20 NEC car radio 4.5-Mhz PD1723GF-013 LCD15 Tuner UPD1723GF 10.7 MHZ
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAMTM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

LLDRAM

Contextual Info: Preliminary GS4288C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

NEC car radio 4.5-Mhz

Abstract: LCO17 SP MZ8 transistor dk 50 NEC PD6121 diodo 72 DIODO LED Hoshiden LED display for radio pd7225
Contextual Info: P R E L IM IN A R Y D A TA S H E E T M O S IN T E G R A T E D C IR C U IT uPD17012GF-011 PLL Frequency Synthesizer and Controller for Car Audio FM, MW, and LW Tuners The/iPD17012GF-011 isa CMOS LSI that was developed for FM, M W ,and LW tu n ers em ploying the world­

144-BALL

Contextual Info: Preliminary GS4288S09/18L 144-Ball BGA Commercial Temp Industrial Temp 32M x 9, 16M x 18 288Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II

Contextual Info: Preliminary GS4576S09/18L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18 576Mb SIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II