DISCRETE TIME CONTROL SYSTEMS Search Results
DISCRETE TIME CONTROL SYSTEMS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 9513ADC-SPECIAL |
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9513A - Rochester Manufactured 9513, System Timing Controller |
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| 9513ADC |
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9513A - Rochester Manufactured 9513, System Timing Controller |
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| 9519ADM/B |
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9519A - Universal Interrupt Controller |
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| D8274 |
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8274 - Multi-Protocol Serial Controller (MPSC) |
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| MD82510/B |
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82510 - Serial I/O Controller, CMOS, CDIP28 |
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DISCRETE TIME CONTROL SYSTEMS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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n715
Abstract: 12V FAN CONTROL BY Using 1N4148 fan control by human detection sensors fs5 mosfet Zener Gate Protection Shunt Resistor Linear 1N4148 2N3904 2N3906 ADM1033 NDT3055L
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ADM1033 16-lead RQ-16) ADM1033ARQ RQ-16 ADM1033ARQ-REEL ADM1033ARQ-REEL7 ADM1033ARQZ1 ADM1033ARQZ-REEL1 n715 12V FAN CONTROL BY Using 1N4148 fan control by human detection sensors fs5 mosfet Zener Gate Protection Shunt Resistor Linear 1N4148 2N3904 2N3906 ADM1033 NDT3055L | |
Discrete RF Semiconductors: Alive and WellContextual Info: Discrete RF Semiconductors: Alive and Well By Rick Cory, Skyworks Solutions, Inc. In the early 1980s, I was faced with a choice. I was working for a small microwave diode manufacturer as a test engineer, happily integrating stand-alone test equipment into systems controlled by first-generation IBM personal computers. My division vice |
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1980s, Discrete RF Semiconductors: Alive and Well | |
ATS35Contextual Info: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils July 1998 M I C R O E L E C T R O N I C SYSTEMS □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to |
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UT69R000 16-bit MIL-PRF-3853 MIL-STD-883 DDD73b3 69R000 T343TM7 ATS35 | |
m9706
Abstract: M100 m9706dc Fairchild F8 M-0110 97A6
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12-Bit mA9706 A9706 M0100 M0108 M0110 M0118 M0120 M0128 m9706 M100 m9706dc Fairchild F8 M-0110 97A6 | |
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Contextual Info: N AMER PHILIPS/DISCRETE bbS 3 T 31 00 1 fl7 CH 4 I 2 SE D BUS11 BUS11A r- 3 3 -1 3 S ILIC O N DIFFUSED POW ER TR AN SISTO R S High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc, |
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BUS11 BUS11A 33-J3 bb53T31 T-33-13 | |
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Contextual Info: rr N AMER PHILIPS/DISCRETE bbS3T31 Q01S72S 2 5SE D BUS13 BUS13A y v T-32-/SSILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc. |
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bbS3T31 Q01S72S BUS13 BUS13A T-32-/SSILICON | |
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Contextual Info: Solving Power-Management Problems with a Single Chip that Handles up to 7 Channels of Sequencing, Monitoring, and Supervision By Peter Canty [peter.canty@analog.com] The design of systems with multiple supply voltages is commonplace today. In such systems as Internet routers, digital subscriber-line |
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ADM1060 28-lead ADM1060. | |
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Contextual Info: N AMER PHILIPS/DISCRETE 5SE ri fc>bS3T31 DQlfl733 1 D BUS14 BUS14A T - 3 3 -/S T SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TQ-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc. |
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bS3T31 DQlfl733 BUS14 BUS14A | |
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Contextual Info: N AUER PHILIPS/DISCRETE hfaSB^l 0Q1A717 3 • 2SE D BUS12 BUS12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc. |
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0Q1A717 BUS12 BUS12A bbS3l31 0Q1S723 Q0167S4 | |
bux85Contextual Info: N AI1ER PHILIPS/DISCRETE b'lE D bb53T31 0026577 H22 BUX84 BUX85 APX SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in TO-220 envelopes, intended for use in converters, inverters, switching regulators, motor control systems and switching applications. |
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bb53T31 BUX84 BUX85 O-220 BUX84 bux85 | |
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Contextual Info: N AMER PHILIPS/DISCRETE Lia53T31 0011013 7 • 35E D J BUX98 BUX98A V T - 3 3 -/jT SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc. |
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Lia53T31 BUX98 BUX98A | |
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Contextual Info: N A PIER PHILIPS/DISCRETE bb53T31 0QEA531 32fl b'lE ]> APX BUW12 BUW12A J V SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc. |
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bb53T31 0QEA531 BUW12 BUW12A BIJW12A | |
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Contextual Info: N AMER PHILIPS/DISCRETE bbSBSBl DD2flSbfl 41T BUW84 b^E D APX BUW 85 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in SO T82 envelopes, intended for use in converters, inverters, switching regulators, m otor control systems and switching applications. |
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BUW84 BUW84 BUW85 BUW85. DD26S7b | |
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Contextual Info: N AMPR PHILIPS/DISCRETE 2SE D • bbSB'IBl D Q n Q S 3 b ■ BUX47 BUX47A A T - 3 3 -/3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc. |
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BUX47 BUX47A b53T31 | |
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Contextual Info: N AMER PHILIPS/DISCRETE 25E D b b S B ' m 001=1045 7 I BUX46BUX46A T - 3 3 - f 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for us in converters, inverters, switching regulators, motor control systems etc. |
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BUX46BUX46A BUX46 BUX46A bbS3T31 | |
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Contextual Info: N AMER PHILIPS/DISCRETE b^E D • bb53T31 0026555 6bl ■ APX BUW13F BUW13AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc. |
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bb53T31 BUW13F BUW13AF OT199 00Sfl5b2 | |
BU808Contextual Info: N AUER PHILIPS/DISCRETE 5SE D ^53=131 QOlfibS? 0 • I _J B U 808 y r s i - i t r SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed, glass-passivated npn switching transistor in a TO-3 envelope, intended for use in three-phase AC motor control systems. |
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T-33-T5 T-33-75 7Z81799 BU808 | |
BUV89Contextual Info: N AMER PHILIPS/DISCRETE b^E » bbSB'lBl DDBflMTO TBS BUV89 IAPX SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a plastic SOT93 envelope especially intended fo r use in AC m otor control systems from three-phase mains. |
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BUV89 bb53T31 7Z88401 BUV89 | |
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Contextual Info: l I N AMER PHILIPS/DISCRETE hlE T> APX bbSB'lBl 0DE65E3 ESI BUW11F BUW11AF SILICON DIFFUSED POW ER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc. |
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0DE65E3 BUW11F BUW11AF | |
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Contextual Info: N AMER PHILIPS/DISCRETE BSE D btiSB^Sl QOlfl'in 4 BUV82 BUV83 r-23-13 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications. |
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BUV82 BUV83 r-23-13 ttS3131 | |
ddr pcb layout
Abstract: P6860 sdram pcb layout ddr Micron Designline Vol 8 AN2582 ddr pin out dimm pcb layout FAN1655 FAN6555 LP2994
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AN2582 ddr pcb layout P6860 sdram pcb layout ddr Micron Designline Vol 8 AN2582 ddr pin out dimm pcb layout FAN1655 FAN6555 LP2994 | |
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Contextual Info: N AP1ER PHILIPS/DISCRETE b'lE D bbS3*131 002633^ blT I IAPX BUW12F BUW12AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc. |
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BUW12F BUW12AF OT199 bbS3R31 | |
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Contextual Info: _M_ N AMER PHILIPS/DISCRETE btiSBTBl 0011=143 T • QbE D I BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high d V ^ /d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur (e.g. phase |
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BTW42 BTW42â 1000R. BTW42--600 1000R BTW38 | |
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Contextual Info: N AMER PHILIPS/DISCRETE b^E D • b b S B ' m DD2flHflO 03b BUV47 BUV47A _ SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc. |
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BUV47 BUV47A | |