DIP28P Search Results

54256AP

Abstract: TC54256AF 54256a TC54256P 54256AF tmm23256p 27256D tc54256ap
Contextual Info: TOSHIBA TC54256AP/AF SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY D e s c rip tio n The TC54256AP/AF is a 32,768 word x 8 bit one time programm able read only m em or/ m olded in a 28-pin plastic package. The TC54256AP/AF’s access time is 200ns and it has a low power standby m ode which reduces the power dissipation without

CTC 313 pin diagram

Contextual Info: TMPZ84C30A TO SH IBA TMPZ84C30AP-6 / TMPZ84C30AM-6 / TMPZ84C30AT-6 TMPZ84C30AP-8 TLCS-Z80 CTC : COUNTER TIMER CIRCUIT 1. GENERAL DESCRIPTION AND FEATURES The TMPZ84C30A hereinafter referred to as CTC is CMOS version of Z80 CTC and has been designed to provide low power operation.

TC51832FL10

Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Contextual Info: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with

P8251A

Abstract: P82C51A tmp8251 82C51A P8251
Contextual Info: T O S H IB A TM P82C51A TMP82C51AP-2 /TMP82C51AP-10 TMP82C51 AM-2/TMP82C51 AM-10 PROGRAM M ABLE COMMUNICATION INTERFACE 1. GENERAL DESCRIPTION T he TM P82C51A is th e in d u stry sta n d a rd U n iv ersa l S ynchron o u s/A sy n ch ro n o u s R eceiver/T ransm itter USART th a t is fabricated u sin g C-MOS silicon g a te technology.

TMM24256P

Abstract: AF150 TC54256P TTL af tc54256ap
Contextual Info: TOSHIBA MOS MEMORY PRODOCTS TC54256AP/AF-150 DESCRIPTION The TC54256AP/AF is a 32,768 wo r d x 8 bit one time programmable read only memory, and molded in a 28 pin plastic package. The TC54256AP/AF's access time is 150ns and has low power standby mode which reduces the power dissipation without increasing access

a12t

Abstract: TC5563APL-15L TC5563APL-12L c0ee
Contextual Info: 8,192 WORD X 8 BIT CMOS STATIC RAM iDESCRI PTIONl The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz

tc55257cfl

Contextual Info: TOSHIBA TC55257CPiyCFL/CSPL/CFTL/CTRIr70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPL is a 262,14^ b t CMOS static random access memory organized as 32,768 words by 8 oits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of

Contextual Info: DIP 14PIH OU TL IN E DR AWING DIP14-P-300 733 Un it in m m DIP 16PIN OUTLINE DRAWING (DIP16-P-30QA)_ Unit in m m DIP 1 SP IN OU TL IN E DR AW IN G (DIP18-P-300A) 18 U nit in mm 10 n i—i r—t i—> i—i i—i r-> -H u i i i i i ri i i ii ii i

Contextual Info: TOSHIBA TC55257BPL/BFL/BSPL/BFTL/BTRL85/10 L'I SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 Dit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of

Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion

TC54512AP-15

Contextual Info: TOSHIBA TC54512AP-15.-20 TC54512AF-15.-20 SILICON STACKED GATE CMOS 65,536 WORD x 8 BIT ONE TIME PROGRAMMABLE READ ONLY MEMORY Description The TC54512AP/AF is a 65,536 word x 8 bit CMOS one tim e programm able read only m em ory m olded in a 28-pin plastic

TC55257DPL

Contextual Info: TO SHIBA TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates

tip off 0401 transistor using circuit free energy

Abstract: ghr 87 diode transistor 5-2736 E0C63158 E0C63256 E0C63358 S1C05251 AC 121 V TPI 121
Contextual Info: MF1329-02 CMOS CALLING NUMBER IDENTIFICATION RECEIVER IC S1C05251 Technical Manual S1C05251 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

DIP28

Abstract: LC33832M LC33832P LC33832S
Contextual Info: Ordering number : EN4430C CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single 5 V power supply and is organized as 32768 words × 8 bits. By using memory

Contextual Info: TOSHIBA TC55257CPI/CFVCSPI/CFn/CTRI-85L/10L SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of

Contextual Info: TOSHIBA T C 5 5 2 5 7 B P L /B E IV B S P [ y B F n y B T R L « 5 /1 0 SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of

Contextual Info: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC55257 DPL / DFL / DFTL / DTRL - 55L TC55257 DPL / DFL / DFTL / DTRL - 70L TC55257 DPL / DFL / DFTL / DTRL - 85L DATA SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM TENTATIVE DATA

Contextual Info: cP DS04-28500-5E FUJITSU DATA SHEET ASSP AD/DA CONVERTER M B 4 0 1 6 6 /M B 4 0 1 7 6 1-CHANNEL 6-BIT AD/DA CONVERTER WITH CLAMP CIRCUIT The Fujitsu MB40166 and MB40176 are low power 6-bit AD/DA converter which is fabricated with Fujitsu Advanced Bipolar Technology. MB40166 and MB40176

Contextual Info: September 1990 Edition 1.0 DATA SHEET MB82B88-15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM 32K Words x 8 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu M B82B88 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with C M O S technology. B iC M O S technology is

Contextual Info: TS258-C89Y Nov. 1989 FUJITSU DATA SHEET • MB84F256-25 CMOS 256K BIT LOW POWER SRAM 32,768-WORD x 8-BIT FULL CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84F256 is a 32,768-w ord by 8 -b it static random access memory. Fabricated with full CMOS circuit, MB84F256 realizes extremely low data retention current compared with

Contextual Info: F U JIT S U 6-BIT AD/DA CONVERTER WITH CLAMP CIRCUIT MB40176 September 1988 Edition 1.0 6-BIT AD/DA CONVERTER WITH CLAMP CIRCUIT The Fujitsu MB40176 Is a low power 6-blt AD/DA converter which is fabricated with Fujitsu Advanced Bipolar Technology. Owing to adoption of clamper and reference

Contextual Info: FU JITSU MAGNETIC DISK HEAD AMPLIFIER MB 4117-4 MB 4117-6 MB 4118-4 MB 4118-6 March 1987 E d itio n 2.0 MAGNETIC DISK HEAD AMPLIFIER The Fujitsu M B 4 1 1 7 -4 and M B 4 11 8 -4 are magnetic disk head am plifiers w ith Zener-zapped w rite current sourse fo r 4-channel head, MB 4117-6 and

Contextual Info: 8,192 W O R D X 8 B IT C M O S STA TIC R A M ¡d e s c r i p t i o n ] The TC5565APL/AFL is a 65,336 hit static random access m em ory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques

Contextual Info: T O SH IB A TC55257DPL/DFL/DFTL/DTRL-55L,-70L,-85L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32,768-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55257DPL/DFL/DFTL/DTRL is a 262,144-bit static random access memory SRAM organized as 32,768 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates