DIODS Search Results

diode T-71

Abstract: ESJA57-04A
Contextual Info: 1. SCOPE This specification provide the-ratings and the requirements for high voltage silicon diode ESJA57-04A made by FUJI ELECTRIC CO. .LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENT FtCAT 1ON The diods shall be marked with Cathode Mark and Lot No.

10MQ060

Abstract: 10MQ060N AN-994
Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-219-75 10MQ060N sch diodSMA PD-20519 rev. D 11/99 10MQ060N 2.1 Amp SCHOTTKY RECTIFIER SMA Description/Features

10MQ040

Abstract: 10MQ040N 10MQ040TR AN-994
Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-219-67 10MQ040N sch diodSMA PD-20518 rev. D 11/99 10MQ040N SCHOTTKY RECTIFIER 2.1 Amp SMA Major Ratings and Characteristics

10BQ100

Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-44 10BQ100 sch diodSMB PD - 2.437A 10BQ100 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics

10BQ030

Abstract: 10BQ040 10BQ040TR AN-994
Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-10 10BQ030 sch diodSMB PD-20708 rev. A 01/2000 10BQ030 SCHOTTKY RECTIFIER 1 Amp SMB Major Ratings and Characteristics

SR1FM

Abstract: SR1FM-2
Contextual Info: MITSUBISHI SILICON RECTIFIER DIODS SRI FM LOW POWER, GENERAL USE LEÁD-MOUNTED TYPE DESCRIPTIO N Dim ension: mm O U T L IN E D R A W IN G The Mitsubishi type SR1FM silicon rectifier diodes SR 1FM -2~S R 1FM -20 are a plastic modification of the diffused junction type rectifier element.

Contextual Info: Product specification 1N4150W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 Features +0.1 1.6-0.1 Silicon Epitaxial Planar Diode Fast general purpose and switching. +0.1 3.7-0.1 This diods is also available in other case styles including: the DO-35 case with the type designation 1N4150 and

10BQ040

Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-28 10BQ040 sch diodSMB PD - 2.397A 10BQ040 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics

30BQ015

Abstract: 30BQ015TR AN-994
Contextual Info: 2002-02-18 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-229-40 30BQ015 sch diodSMC Bulletin PD-2.490 rev. A 05/00 30BQ015 SCHOTTKY RECTIFIER 3 Amp SMC Major Ratings and Characteristics

Contextual Info: Product specification 1N4151W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Silicon Epitaxial Planar Diode +0.1 3.7-0.1 Fast switching diods. This diods is also available in other case styles including: 0.50 0.1max 0.35

HIGH VOLTAGE DIODE 12kv

Abstract: ESJA52-12A
Contextual Info: SPECIFICATION Device Name_ : High Voltage Si Iicon Diods T vpg Name_; E S J A 5 2 ^ 1 2 A _ No._ :_;_ tlil« m nUrial arid the tnformiiUon har«ln |k ih* pro|>firty of Fuji Eltctilc C o.,ltd. Th*y *hid1 b* r«l|h«r reptcKlucsd, çoplitd.

10MQ100

Abstract: 10MQ100N AN-994
Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-219-83 10MQ100N sch diodSMA PD-20520 rev. D 11/99 10MQ100N SCHOTTKY RECTIFIER 2.1 Amp SMA Description/Features

10BQ060

Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-36 10BQ060 sch diodSMB PD - 2.438A 10BQ060 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics

10BQ015

Contextual Info: 2002-01-31 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-217-02 10BQ015 sch diodSMB PD - 2.396A 10BQ015 SCHOTTKY RECTIFIER 1 Amp Major Ratings and Characteristics

MELF SMD

Abstract: 1N4150W 1N4150 LL4150 LL4150 SMD
Contextual Info: Diodes SMD Type SMALL SIGNAL DIODES 1N4150W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 Features +0.1 1.6-0.1 Silicon Epitaxial Planar Diode Fast general purpose and switching. +0.1 3.7-0.1 This diods is also available in other case styles including:

diods

Abstract: smd 123 smd diode Sod-123 smd transistor 123 1N4151W LL4151
Contextual Info: Diodes SMD Type SMALL SIGNAL DIODES 1N4151W SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Silicon Epitaxial Planar Diode +0.1 3.7-0.1 Fast switching diods. This diods is also available in other case styles including: 0.50

T-045

Contextual Info: P H ILIPS Id A C 2 1 DIODE-TRIODE for use as A.?, amplifier DIODE-TRIODE pour l'utilisation en amplificatrice D.F. DIODS-TRIODE zur Verwendung als N.F.Verstärker Heating: direct by D.C.; series or parallel supply Chauffage: direct par G.C.; alimentation en série ou

10BQ040

Abstract: 10BQ040TR 20BQ030 AN-994 PD-20717
Contextual Info: 2002-02-18 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-224-52 20BQ030 sch diodSMB PD-20717 rev. A 01/2000 20BQ030 SCHOTTKY RECTIFIER 2 Amp SMB Major Ratings and Characteristics

smd diode marking a6

Abstract: smd diode a6 DIODE SMD A6 SMD a6 Transistor SMD DIODE A6 t smd transistor A6 SMD A6 smd transistor A6 datasheet DIODE smd marking A6 BAS216
Contextual Info: Diodes SMD Type HIGH-SPEED SWITCHING DIODE BAS216 SOD110 Unit: mm Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V cathode idenfifier Repetitive peak forward current:max. 500 mA.

Contextual Info: Surface Mount Bias-Tees Wideband 10 to 4200 MHz Features Maximum Ratings Operating Temperature -40°C to 85°C Storage Temperature JEBT-4R2G • wideband, 10 to 4200 MHz • low insertion loss, 0.6 dB typ. • good isolation, 40 dB typ. -55°C to 100°C RF Power

Contextual Info: Surface Mount JEBT-4R2G+ JEBT-4R2G Bias-Tee Wideband 10 to 4200 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature RF Power 30dBm max. Voltage at DC port 500mA • • • • DC resistance from DC to RF&DC port 4.5 ohm typ.

Contextual Info: Product specification 1PS79SB62 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Ultra high switching speed + +0.1 0.6-0.1 - Very low capacitance High breakdown voltage +0.1 1.6-0.1 0.77max Guard ring protected +0.05 0.1-0.02 0.07max Ultra small plastic SMD package.

Contextual Info: Product specification 1PS79SB70 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Low forward voltage + +0.1 0.6-0.1 - High breakdown voltage Guard ring protected +0.1 1.6-0.1 0.77max Ultra small plastic SMD package. +0.05 0.1-0.02 0.07max

MMW4

Abstract: F5023
Contextual Info: p w tT "iltf T l* f C a ll it p aM h*' W t N 11 , M • * prtptrly pi r tp w lM M , «or «M 1w Q« iw iv lM t u ito g b a n a l« » irtO « u l lM>. « «Hc4mM li 4M xr; «tfi«1ú*Vii P9T lNr ü>r oí • »? 0 *<lifc F < |l Tib N*Urf>l i»a ih» lnror#iaiiaa