DIODES 422 Search Results
DIODES 422 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODES 422 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
diodes
Abstract: em 434 IMPATT gunn diodes Tuning Varactors varactors GUNN Diodes high frequency step recovery diodes PIN diodes
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426iplierdiodesem 434impatt+7 | |
SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
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sem 5027atransistor bd 540 lysmc710g131-80 wj 89+6 | |
SMQ Series 510 DIODEContextual Info: Hermetic Surface Mount PIN Diodes V 2.00 Features • Power Dissipation to 1 Watt • Low Loss Switching Diodes • Low Distortion Attentuator Diodes Description This series of PIN diodes is encapsulated in metal elec trode faced MELF bond packages resulting in hermeti |
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ma4ph236ma4ph238ma4ph235ma4ph237+7 | |
diodes
Abstract: ultraFast Recovery Bridge Rectifier zener 431 damper diodes
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diodesultrafast recovery bridge rectifierzener 431damper diodes | |
diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
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vr-60ssvr-61ssdiode 8603sot23 1z+8 | |
B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
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vr-60ssvr-61ssb 2306 barrier rectifierdiode ru 3b+8 | |
1N662Contextual Info: 1N643, 1N662, 1N663 Available Screening in reference to MIL-PRF-19500 available SILICON SWITCHING DIODES DESCRIPTION This 1N643, 1N662 and 1N663 series of JEDEC registered switching/signal diodes are metallurgically bonded and hermetically sealed. These low capacitance diodes feature |
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1n6431n6621n663mil-prf-19500+1 | |
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Contextual Info: 1N643, 1N662, 1N663 Available Screening in reference to MIL-PRF-19500 available SILICON SWITCHING DIODES DESCRIPTION This 1N643, 1N662 and 1N663 series of JEDEC registered switching/signal diodes are metallurgically bonded and hermetically sealed. These low capacitance diodes feature |
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1n6431n6621n663mil-prf-19500+1 | |
1n662 equivalentContextual Info: 1N643, 1N662, 1N663 Available Screening in reference to MIL-PRF-19500 available SILICON SWITCHING DIODES DESCRIPTION This 1N643, 1N662 and 1N663 series of JEDEC registered switching/signal diodes are metallurgically bonded and hermetically sealed. These low capacitance diodes feature |
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1n6431n6621n663mil-prf-19500+2 | |
20301
Abstract: CVB1045-12 MV1204 V1204-24 VE7800-30 smv1200-04 CVH2030 CKV2010 SMV1204-11
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hyperabrupt4-12smv1204-22mv1204-23v1204-24+14 | |
MA4P506-1072
Abstract: MA4P504-30 MA4P504-1072 MA4P506-258
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ma4p100ma4p202ma4p203ma4p303+10 | |
ma47110
Abstract: MA47047
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ot-23ma47100ma47110ma47111+6 | |
alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
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hig86-755-3679515alternator diode 1776 b2az marking transistor sot-23smd sot23 transistor mark y2+7 | |
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Contextual Info: 5642214 M / A - C O M S E M I C O N D U C T OR ^3 DE|SL45214 93D 0 0 2 2 1 7 ^ -6 7 - ¿>7 0000221 0 Am MA-40185 18-40 GHz Schottky Barrier Silicon Beam Lead Diodes MEDIUM BARRIER MIXER AND DETECTOR DIODES Description Beam lead Schottky diodes are planar devices in |
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sl45214ma-40185mil-std-750mil-std-1021 | |
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diac D30
Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
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ot-23c-120conventn17112n1893+16 | |
em 234 stepper
Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
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o01ed0h1-o01ed0-0106030ndem 234 stepper2sc5586 equivalent+8 | |
1N6638US
Abstract: 1N6642US 1N6642US equivalent microsemi 1n6642 1N6642US microsemi
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1n6638us1n6642us1n6643usmil-prf-19500/578+4 | |
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Contextual Info: 1N6638US, 1N6642US, 1N6643US Available on commercial versions Qualified Levels: JAN, JANTX, JANTXV and JANS VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION This popular surface mount equivalent JEDEC registered switching/signal diodes are military |
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1n6638us1n6642us1n6643usmil-prf-19500/578+1 | |
1N6638US
Abstract: T4-LDS-0218-1 1n6642US
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1n6638us1n6642us1n6643usmil-prf-19500/578+1 | |
microsemi 1n6642
Abstract: 1N6638 JANTX 1N6638 1N6642 JANTXV 1N4148-1 JANS jantx diodes 1115-13
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1n66381n66421n6643mil-prf-19500/578+8 | |
1N4148-1 JANS
Abstract: 1N6638
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1n66381n66421n6643mil-prf-19500/578+2 | |
hitachi mosfet power amplifier audio application
Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
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amvc132hvc133hvc134hvm131s+13 | |
transistors BC 639 029
Abstract: BC368N mpsa 46 MPSA 506 transistor 42BA-3 SBC337
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o-92dtransistors bc 639 029bc368nmpsa 46+3 | |
BAT42.43
Abstract: BAT43 MINIMELF
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bat42bat43do-35300us+3 | |