zener diode
Abstract: WT-Z108N
Contextual Info: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode
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Contextual Info: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z108p |
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ZENER Vr 3V
Abstract: Zener Diode 3v zener- diode WT-Z111N
Contextual Info: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z111n160umzener vr 3vzener diode 3v+1zener- diode
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Contextual Info: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z108n-4137um |
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3.2 v zener diode
Contextual Info: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z108p-au3.2 v zener diode |
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um 54 diode
Abstract: zener diode chip 3.2 v zener diode
Contextual Info: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z108n-au137umum 54 diodezener diode chip+13.2 v zener diode
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WT-Z108P
Contextual Info: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode
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zener diode chip
Abstract: WT-Z108P-AU4
Contextual Info: WT-Z108P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU4 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z108p-au4zener diode chip |
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z106
Abstract: DIODE ZENER X
Contextual Info: WT-Z106P-4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-14 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z106p-4-14150mm25-jan-07z106+1diode zener x
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3.2 v zener diode
Abstract: 105um DIODE ZENER X
Contextual Info: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode
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wt-z106p-4-12150mm05-dec-063.2 v zener diode+2105umdiode zener x
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std883
Abstract: Zener diode DIODE ZENER X
Contextual Info: WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode
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wt-z106n-au4mil-std88324-nov-05std883+2zener diodediode zener x
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3.2 v zener diode
Abstract: diode zener protection ZENER 5V diode Zener LED zener diode WT-Z105P-AU4 DIODE ZENER X
Contextual Info: WT-Z105P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 2. Structure: 2-1 Planar type: P/N Diode
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wt-z105p-au4mil-std8833.2 v zener diodediode zener protection+4zener 5v diodezener ledzener diodediode zener x
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3.2 v zener diode
Abstract: 10v ZENER DIODE 20 kV ZENER DIODE DIODE ZENER X
Contextual Info: WT-Z106P-AU4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-AU4-14 2. Structure:
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wt-z106p-au4-14150mm20-jul-073.2 v zener diode+310v zener diode20 kv zener diodediode zener x
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R22A
Abstract: transistor MTBF OPTOCUPLER HAND BOOK TRANSISTOR mosfet transistor R1d R24 transistor optocupler transformer mtbf R18A R22E
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25 Load : 110VAC input , Full load Unit : ZPS60-3 Ver: V1.1 Date: 22/05/2003 CAT TYPE 5.1 Microcircuits,MOS 6.1 Diode,General 6.1 Diode, Schottky 6.1 Diode, Schottky 6.1 Diode, Fast 6.1 Diode, Zener
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110vaczps60-3r22atransistor mtbf+8optocupler hand booktransistor mosfettransistor r1dr24 transistoroptocuplertransformer mtbfr18ar22e
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lg diode
Abstract: Z188 LR Z185-CO diode 006 LG
Contextual Info: SIEMENS LG/LR/LY Z181 2 toS DIODE ARRAYS LG ZI 82-186 8,10 DIODE ARRAYS LG Z188, 180 2 to 10 DIODE ARRAYS LR Z182“ 189/180 SINGLE 2 mm LED Lamp Dimensions in inches mm •094 ( 2 .4 ) , .063(2.1) .112(2.84) .068(2.24) .378 (9.6) 330(04) r\ o m .J.100 xa.S4)
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z181-coz182-colg/lrz183-coz184-co+10z185-coz186-coz187-coz188-coz189-coz180-colg diodez188lr z185-codiode 006 lg
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l30 diode smd
Contextual Info: SI EM ENS LG/LR/LY Z181 2 to 6 DIODE ARRAYS LG Z182-186 8,10 DIODE ARRAYS LG Z188,180 2 to 10 DIODE ARRAYS LR Z182— 189/180 s in g l e 2 mm LED Lamp Dimensions in inches mm .0 94 ( 2 .4 ) FEATURES • Emission color - LR : Red - LG : Green -L Y : Yellow
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z182-18618-plnfl535tl30 diode smd |
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diode G21
Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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fmmd914bav70bav74bav99+10baw56100madiode g21marking g21 z5ld4rabzx84-c27bzx84c18g21 transistorbzx84c3v0bzx84
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zd1 1014
Abstract: 217F C10A C12A capacitor ceramic optocupler transistor MTBF
Contextual Info: Data Base : MIL - HDBK - 217F Environment : Ground benign , 25℃ Load : 110VAC input , Full load Unit : ZPD40-512 Ver: V1.0 Date: 11/29/2004 CAT TYPE Q'ty 5.1 Microcircuits,MOS 1 6.1 Diode,General 1 6.1 Diode,General 1 6.1 Diode, Schottky 1 6.1 Diode, Schottky
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110vaczpd40-512zd1 1014217f+5c10ac12acapacitor ceramicoptocuplertransistor mtbf
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ltc4352iddpbf
Abstract: TRANSISTOR mosfet 9V LTC4352I LTC4352 LTC4352IMS Schottky Diode 80V 6A 12-PIN LTC4352C LTC4352CDD LTC4352IDD
Contextual Info: LTC4352 Low Voltage Ideal Diode Controller with Monitoring FEATURES DESCRIPTION n The LTC 4352 creates a near-ideal diode using an external N-channel MOSFET. It replaces a high power Schottky diode and the associated heat sink, saving power and board area. The ideal diode function permits low loss
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ltc435212-pin1tc4412hv8v/36v+13tsot-23ltc4413/ltc4413-1dfn-10ltc4414ltc4416/ltc4416-1ltc4352iddpbftransistor mosfet 9vltc4352iltc4352imsschottky diode 80v 6altc4352cltc4352cddltc4352idd
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217F
Abstract: resistor film transistor MTBF L2 diode 725
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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zpsa40-5217fresistor filmtransistor mtbf+1l2 diode 725
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ZPSA60-15
Abstract: FR 306 Diode 217F
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-15 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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zpsa60-15fr 306 diode217f |
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diode Lz 66
Abstract: diode LZ. 58 BZX84C20 BZX84-C27 diode marking w8 BZX84-C5V1 BZX84C18 FMMD914 diode marking x6 BZX84-C15
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C am bient tem perature Max. Type FM MD914 HD3A BAV70 BAV74 HD 2A BAV99 BAW 56 HD 4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith
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fmmd914bav70bav74bav99+15baw56100mabzx84fmmd3102bzx84-c3v0bzx84-c3v3diode lz 66diode lz. 58bzx84c20bzx84-c27diode marking w8bzx84-c5v1bzx84c18diode marking x6bzx84-c15
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DIODE 4008
Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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zpsa40-12diode 4008diode" 4008217f+4capacitor electrolyticzener3optocupler105 capacitor
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217F
Abstract: ZPSA60-12 capacitor variable ceramic zd1 1014 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-12 Ver: V11 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General
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zpsa60-12217fcapacitor variable ceramiczd1 1014+1105 capacitor
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