160UM Search Results

ic 8259

Abstract: OPB0642 opb064
Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode

Contextual Info: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um 1.6 Active Area : 2.86mm X 2.86mm

Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode

OPD3030

Abstract: ir10
Contextual Info: OPD3030 Silicon PIN Photo Diode HIGH SPEED SENSITIVITY unit : ㎛ 1. Structure 1.1 Chip Size : 3.00mm X 3.00mm 1.2 Chip thickness : 400±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Oxide 1.5 Bonding Pad Size - Anode top : 160um X 160um

Asp1251

Abstract: J-STD-020 SAC305 land pattern for WLCSP RCN310 ASPIC320 ism Transceiver SAC305 reflow system in package SAC305 reflow csp IPD filter IPDiA filter
Contextual Info: Manual Handling recommendation These capacitors are designed to be mounted with a standard pick and place machine, with reflow. In case of manual handling, please follow below recommendations: x Minimize mechanical pressure on the capacitors use of a vacuum nozzle is recommended .

FMM5826X

Abstract: Ka-band ED-4701
Contextual Info: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications

gl 9608

Contextual Info: FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm Typ. •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications

gs32

Abstract: Maruwa substrate amorphous head AS970 maruwa network resistor
Contextual Info: MARUWA GENERAL CATALOG ALUMINA SUBSTRATES [ Al2O3 ] The Alumina substrates are produced under severe quality control with carefully selected high-purity Alumina materials that ensures stable quality and excellent characteristics. a Features State : Good smoothness/flatness with less porosity due to fine particles. Excellent in adhesion with thick/thin film materials.

sem 5025

Abstract: gs 31 thermal printer head Al2O3 HA-96-2 AS970 amorphous head laser cutting circuit drilling machine applications
Contextual Info: アルミナ基板〔Al2O3〕 ALUMINA SUBSTRATES [ Al2O3 ] The Alumina substrates are produced under severe quality control with carefully selected high-purity Alumina materials that ensures stable quality and excellent characteristics. 回路部品 CIRCUIT CERAMICS

Contextual Info: 1C Foundry Facilities/Capabilities Features • MBE and Ion Implant Technologies • Three Optimized Processes HI2 - Low N oise/H igh Efficiency SI1 - Switch/Low Loss PE3 - Pow er/H igh Efficiency • Power and Low Noise On a Single Wafer • Design Service Available

ZENER Vr 3V

Abstract: Zener Diode 3v zener- diode WT-Z111N
Contextual Info: WT-Z111N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z111N 2. Structure: 2-1 Planar type: Silicon Diode

Contextual Info: Yellow Green LED Chip OPA5615H GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition

32 v dc 1500ma

Abstract: ka-band amplifier ED-4701 FMM5820X EIAJ ED-4701 305 chip 7490 power amplifier mmic gl 9608
Contextual Info: FMM5820X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; Pout = 35.5 dBm Typ. •High Linear Gain; GL = 24 dB(Typ.) •Frequency Band ; 29.5 - 30.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5820X is a power amplifier MMIC that contains a fourstages amplifier, internally matched, for standard communications

ac-rx

Abstract: MTU410
Contextual Info: MYSON TECHNOLOGY MTU410 4-Bit Micro-Controller with LCD Driver, 1K Word FEATURES • • • • • • • • • • • • • • • • • • • Very low current dissipation. Wide operating voltage range. Supports both Ag and Li batteries. Powerful instruction set.

Contextual Info: ES/EMM5075X Preliminary Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω DESCRIPTION The ES/EMM5075X is a MMIC amplifier that contains a three-stage

EMM5834X

Abstract: 7313 28 pin pin diagram of 8355 04482 an 7073 Eudyna Devices X BAND power amplifiers ED-4701 1380um
Contextual Info: EMM5834X Ku / K-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 26 dBm Typ. •High Gain; G1dB = 23 dB(Typ.) •Wide Frequency Band ; 12.7 - 27.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The EMM5834X is a wide band power amplifier MMIC that

FMM5063X

Abstract: "ku band" amplifier Eudyna Devices power amplifiers 5KW* GHZ ED-4701
Contextual Info: FMM5063X Ku-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.0 dBm Typ. •High Linear Gain; GL = 30 dB(Typ) •Wide Frequency Band : 12.75 - 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5063X is a power amplifier MMIC that contains a three

EMM5075

Contextual Info: EMM5075X Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7~15.4GHz Impedance Matched Zin/Zout=50 DESCRIPTION The EMM5075X is a MMIC amplifier that contains a three-stages amplifier, internally matched, for standard communications band in the

Contextual Info: OPA5615N Yellow Green LED Chip GaP/GaP N Side-Up 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (P Type) (N/P Type) Symbol Min Forward Voltage Typ

Contextual Info: FMM5063X Ku-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 32.0 dBm Typ. •High Linear Gain; GL = 30 dB(Typ) •Wide Frequency Band : 12.75 - 15.4 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5063X is a power amplifier MMIC that contains a three

Contextual Info: ES/EMM5075X Preliminary Ku-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 12.7~15.4GHz Impedance Matched Zin/Zout=50 ✁ DESCRIPTION The ES/EMM5075X is a MMIC amplifier that contains a three-stage

FANUC POWER SUPPLY

Abstract: AC200 B360 C360 PV20 air bearing convex lens
Contextual Info: ナノの世界を開拓する超精密ナノ加工機 Super nano machine exploring nano field 加工事例 Samples mROBONANO α-0iBによる多彩な加工事例をご紹介します。 （ここに紹介するサンプルの精度は加工条件、材質、工具等に依存しますので、保証するものではありません。）

DBM28

Abstract: ED-4701 FMM5823X power amplifier mmic
Contextual Info: FMM5823X K-Band Power Amplifier MMIC FEATURES •High Output Power: P1dB = 27~29 dBm Typ. •High Linear Gain: GL = 19 dB(Typ.) •Frequency Band: 17.7 - 27.0 GHz •High Linearity: OIP3 = 36.5dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5823X is a power amplifier MMIC that contains a four

14MIL

Contextual Info: Yellow Green LED Chip OPA5615H GaP/GaP 1. Material Substrate GaP Epitaxial Layer GaP 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter (N Type) (P/N Type) Symbol Min Forward Voltage Typ Unit Condition