DIODE YSD Search Results

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

Contextual Info: bTE N AI1ER P H I L I P S / D I S C R E T E D • bbS3T31 DD3DS7Q 74fl H A P X Pro d uct S pecification Philips S em ico nd uctors B U K 4 4 5 -5 0 0 B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a

HX 2272 l2

Abstract: top258 HX 2272 EER28 BOBBIN TOP258MN equivalent for TOP258MN YSD2GM121L32B0BA10264 ELF15N010A ELXZ350ELL equivalent for TOP258
Contextual Info: DESIGN EXAMPLE REPORT Title 35 W 80 W Peak Power Supply Using TOP258MN Specification 90 – 265 VAC Input; 24 V, 1.46 A (3.33 APEAK) Output Application Inkjet Printer Author Applications Engineering Department Document Number DER-161 Date April 21, 2009

BUZ15

Contextual Info: PowerMOS transistor_ _ BUZ15 N AUER PHILIPS/DISCRETE OhE D ” • hb53l31 □D14Sfl4_l ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMER PHIL I P S / D I S CR E T E 5SE D fc.b53^31 DDEOSTO 4 PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r-3 i- o i GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

ee25 transformer

Abstract: EE25 core carli ELECTRONICS EE25 EN55022B EPR-93 PKS606Y AC TO DC DIODE BRIDGE PC40EE25-Z capacitor panasonic GC series
Contextual Info: Engineering Prototype Report for EP-93 – 32 W/81 W Peak Supply Using PeakSwitch PKS606Y Title 90-265 VAC Input, 30 V, 1.07 A (continuous), Specification 2 A (100 ms), 2.7 A (50 ms) Output Application Printers, DVRs, Audio, General Purpose Author Power Integrations Applications Department

EE25 transformer

Abstract: Z5U 4700 zener diode mv 5T EE25 core EE25 2006 lisn
Contextual Info: Engineering Prototype Report for EP-93 – 32 W/81 W Peak Supply Using PeakSwitch PKS606Y Title 90-265 VAC Input, 30 V, 1.07 A (continuous), Specification 2 A (100 ms), 2.7 A (50 ms) Output Application Printers, DVRs, Audio, General Purpose Author Power Integrations Applications Department

PX684K3ID6

Abstract: ee25 transformer EE25 2006 vishay sj 56 EE25 core SIL6039 carli ELECTRONICS yw-360 UL1015 14 AWG wire 8918-189 Belden
Contextual Info: Engineering Prototype Report for EP-93 – 32 W/81 W Peak Supply Using PeakSwitch PKS606Y Title 90-265 VAC Input, 30 V, 1.07 A (continuous), Specification 2 A (100 ms), 2.7 A (50 ms) Output Application Printers, DVRs, Audio, General Purpose Author Power Integrations Applications Department

abb ys thyristor

Abstract: ABB thyristor modules ABB Thyristor YST Thyristor ys 150 Thyristor ys YSTT6-01 ABB thyristor ys ABB thyristor ystt6-01 Thyristor ABB ys 150 Thyristor ys 130
Contextual Info: A B B PRIVES □OlbSSS GOOOOlt. 1 54E D ABB Drives- MODULES - Thyristor modules MODULE - Thyristor-Module MODULES - Modules de thyristors ff Cat.No. Bestellnummer n°Cat. “ Type Typ Type It s m ItB M S ! Toaso ^TAV / ^ ra s a 10ms T vj max A A °C A °C

2SJ134

Contextual Info: N E C DE~| b 4 S 7 S 5 S ELEC TRO NIC S INC DOnDBT 7S g f^ ff PRELIMINARY SPECIFICATICI: P-CHANNEL S I L I C O N P A C K A G E DIMENSIONS {Unît: mm n . o* 10.6 MAX. $ 3.6= 0.2 yf 4.8 M A X 10.0 ,1 4 c *L3± 0.2 123 1.3 ±0.2 Iti 0.5± 0.2- 2.8Ì0.2 0.75=0.3

220v AC voltage stabilizer schematic diagram

Abstract: 7 SEGMENT DISPLAY COMMON CATHODE lt 543 IC 4049 lt 543 7 SEGMENT DISPLAY COMMON CATHODE ram 2114 B778* circuit transistor g23 ic4049 common cathode 7 SEGMENT DISPLAY LT 543 ERO tantal
Contextual Info: EPSON - <=* TECHNICAL MANUAL P X INTRODUCTION The EPSOM PX-B is a general-purpose portable com puter driven by an incorporated rechar­ geable battery. Standard features include a m icro cassette drive, ROM capsule and RS-232C interface a llo w in g the machine to independently handle a variety of appfications. The system

diode avalanche DSA VRRM 2300

Abstract: diode avalanche DSA DSA 135 dsa 1508-11 DSA VRRM 2300 40561 dsa 1508 abb diode YSD 40629 YSD 45-01
Contextual Info: A B B SEMICONDUCTORS AG DSA Avalanche Diodes Type Ordering number Bestellnummer Num. de commande 33E D □ QOlbfi Bfl 000002=1 0 B A B B DSA Avalanche-Dioden I f.ÎM V rrm I frms V Tc=50°C Tc=100<>C 8,3 ms 10 ms kA V A A kA I favm DSA l 403-38.50 GG.L1G 3800.5000 1040

Contextual Info: 6427525 N E C ELECTRONICS tiME75E!5 O G l f i W INC 9ÔD 18989 D -f- 3 ? W 3 1 |~ -••\.vs't.¿V-.-s:>•■*. V i r - v ,.-'•; - ? % § < , & V-ïÿ' ELECTRON DEVICE M O S " F I E L D ' 'E F F E~C T " T R Ä N S I S T 0 ?.~ /' • 2 S K F A S T

k 3919

Abstract: CI047 f0r1a F0R1
Contextual Info: 6427525 N E C N EC ELECTRONICS 98D INC 19047 T" 39 W D ~Tfl I ¥ l b 427 SHS 0 D l ci 047 1 ' J r _ PR EL IM IN AR Y SrECiFiCATIC' >rEC ELECTRONICS INC MOS FIELD I RAN 'S 1S T . EFFECT ELECTRON DEVICE S 2 FAST SWITCHING P - C H A X X E L S I L I C O N POWER

Contextual Info: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D D E |b M E 7 S 5 S INC MOÇ D X ^ 1 f -/? 19035 FIELD OOITDBS EFFECT E TRANS I STC = ELECTRON DEVICE 's FAST SWITCHING P-CHANNEL S IL IC O N POWER 3 , I ill 0.6 = 0.1 Absolute Maximum Ratings Ta=25*C Drain t o Source Voltage

Contextual Info: fiâïWS N E C N E C ELECTRONICS 98D INC ELECTRONICS INC ~Tfl 19005 D 7" — 3 DËf| t.Ma?SES i G D n D D S 4 — * *— M O S F I E L D E F F E C T T R A X S I S T C r . ELECTRON DEVICE 2 F A S T N - C H A N X E L S K 8 2 S S W I T C H I N G S I L I C O N '

for1a

Abstract: CITE Electronics 45411
Contextual Info: 6427525 N E C N E C ELECTRONICS INC 98D E L E C T R O N I C S I NC 't ö 18954 D DF|bM57SaS 7"-3 ? - o 7 □ D l ñ clS4 14F PR EL I MI NA R Y SPECIFICATION FAST SWITCHING N-CHANNEL .SILICO N POWER in n i IIineters M1 1 rS J!_l |il il1 u m a .1: : i 3 o FET

for1a

Abstract: eic73 2SK821
Contextual Info: 64 27 525 N E C ELEC TRO NIC S INC 98D 18989 3 tiME7S2S □□IfiTflT 1 |"“ ••. . .,.r NEQm ' w ELECTRON DEVICE MO S y FIEL D P A C K A G E D IM E N S IO N S {Unit: mm _ _ _ _ _ _ " Jl T R A N S I S T G ?. 2SK821 / FAST S W IT C H IN G ft-CHANNEL

t523

Abstract: for1a T523H KIA3 zs transistor
Contextual Info: 6427525 N E C ELECTRONICS N E C I N C _ E L E C T R O N I C S I N C 1Û 98D19087 D 7 “* V 3 - X S Ï>Ê| fe.457S5S D O l ^ D ñ ? □ | P R E L IM IN A R Y S P E C IF IC A T IO N P-CHANNEL SILICON POWER PACKAGE DIMENSIONS MOS FET ARRAY FEATURES

d 151811

Abstract: 40669 DSD 1028-25 A diode avalanche DSA dsa 1508 diode avalanche DSA VRRM 2300 abb diode YSD CH-4UH dsa 1208 DSA 135
Contextual Info: S E MI COND UC TORS AG rrm Ifavm O o &> V f Type O rdering num ber Bestellnum m er Num. de com m ande □ ODl hfi Bfi OOOQOaq □ B A B B DSA Avalanche-Dioden 1 DSA Avalanche Diodes 3flE D o A B B Tc A V DSA l 403-38.50 GG, L1G 3800.5000 1040 Tf 5M V = 100°C 8,3 m s 10 m s

kt829a

Abstract: VEB mikroelektronik Datenblattsammlung Halbleiterbauelemente DDR information applikation mikroelektronik B4207D mikroelektronik datenblattsammlung mikroelektronik DDR "halbleiterwerk frankfurt" KT 829 b
Contextual Info: 0=¡rúl[hE=°@Blel- t3nariilK e le k t r o n ik - b a u e t e m e n t e Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elek­ tronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" (LEB

DIODE C04 06

Abstract: h04040
Contextual Info: J 4z. *• SPECIFICATION Oaviaa Him* Tvb* Nflms _Sbof» J!a _ POWER MOSFET 2 S K 2 644 -0 1 M S 5 F 3 0 5 2 Hj I ■! I* : i|î fi i i i j f « ¡IN ? •ts I m \ É frlli / Fuji E lectric C a.,U d. M alfam ato Factory Q A Tg^S ^ A W E F u ji E to c tr fc C o .,L td .

diode RU3

Abstract: characteristic of diode zl 100
Contextual Info: J 4z. *• SPECIFICATION Oaviaa Him* Tvb* Nflms _Sbof» J!a _ POWER MOSFET 2 S K 2 644 -0 1 M S 5 F 3 0 5 2 Hj I ■! I* : i|î fi i i i j f « ¡IN ? •ts I m \ É frlli / Fuji E lectric C a.,U d. M alfam ato Factory Q A Tg^S ^ A W E F u ji E to c tr fc C o .,L td .

webcam circuit diagram

Abstract: 47803 NXP 125 kHz RFID tag EM4001 webcam Schematic Diagram schematic satellite finder finder delay relay
Contextual Info: NI myRIO Project Essentials Guide Ed Doering NI myRIO Project Essentials Guide Ed Doering Electrical and Computer Engineering Department Rose-Hulman Institute of Technology iv Printed April 23, 2014. Download the latest version at http://www.ni.com/myrio/project-guide.