DIODE VFM Search Results
DIODE VFM Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE VFM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
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5v/10a500nssd-46 diodeschottky 30a 40v+8 | |
diode b81
Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
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5v/10adiode b81b81 004diode erb81-004+7 | |
ultra low forward voltage schottky diode
Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5v/10aultra low forward voltage schottky diodediodeschottky diode low voltage high current+7 | |
c81 004
Abstract: Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004
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5v/10ac81 004diode c81 004schottky diode low voltage high current+7 | |
schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
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5v/10a500nsschottky diode 60v 5a30a high speed diode+8 | |
diode
Abstract: SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5v/10adiodesc-46schottky diode 60v 5a+7 | |
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Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for |
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ffpf60b150dso-220fffpf60b150dstu | |
FFPF60B150DSContextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for |
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ffpf60b150dso-220f | |
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Contextual Info: FFAF60A150DS FFAF60A150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-3PF Applications 1 2 3 Modulation Damper • Modulation + Damper diode designed for |
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ffaf60a150ds | |
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Contextual Info: UX-FOB Diodes Miscellaneous Diode Semiconductor MaterialSilicon Package StyleAxial Mounting StyleT DescriptionMicrowave Oven Diode;VRM:8kV;Io:350mA;Vfmax;16V@350mA;IR:10uA |
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350ma | |
Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
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msc1621t1msc2404msd1819amv1620+10 | |
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Contextual Info: DIODE MODULE DD200GB UL;E76102 M Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating |
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dd200gbe76102dd200gb40 | |
HALF WAVE RECTIFIER CIRCUITS
Abstract: two transistor forward DD200GB40 DD200GB80
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dd200gbe76102dd200gb40dd200gb80+2 | |
DD200GB40
Abstract: DD200GB80
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dd200gbe7610242max34max+3 | |
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marking D33
Abstract: BAS70-07S BAS70-08S
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bas70-07sbas70-08sot323-6lmarking d33 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc6h065o-220acstpsc6h065dstpsc6h065g-tr+1 | |
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Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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stpsc10h065o-220acstpsc10h065dstpsc10h065g-tr+1 | |
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Contextual Info: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF |
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bas70-07sbas70-08sot323-6l | |
DD200GB40
Abstract: DD200GB80 sanrex
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dd200gbe7610242max34max+4 | |
MMAD1109
Abstract: MMAD130 MMAD1103 MMAD1105 MMAD1107
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mmad130/dmmad1109mmad130mmad1103+2 | |
CD61
Abstract: CS61 E78240 powerex cd61
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cd61cs61e78240powerex cd61 | |
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Contextual Info: CD41_99B, CS41_99B CN41_99B, CC41_99B POW-R-BLOKTM Dual & Single Diode Isolated Module 100 Amperes / Up to 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 Description: OUTLINE DRAWING Powerex Dual Diode & Single Diode |
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CD41
Abstract: CD411699B CN4-19
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cd41cd411699bcn4-19 | |
CD61
Abstract: CS61 powerex cd61
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cd61cs61powerex cd61 | |