DIODE V3E Search Results

Contextual Info: SIEMENS IGBT Transistors • • • • • • • • • N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low tem perature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode

OM6508SA

Abstract: OM6509SA RS1002
Contextual Info: OM6508SA OM6509SA INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-254AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package FEATURES • • • • • • • • • Isolated Hermetic Metal Package

TO-264 Jedec package outline

Contextual Info: nixYS ADVANCEDTECHNICAL INFORMATION High Speed IGBT with Diode IXSH30N60BD1 IXSK30N60BD1 IXST30N60BD1 V CES 600 V 55 A ^C25 V CE sat tfi Short Circuit SOA Capability 2.0 V 140 ns TO-247AD (IXSH) Symbol Test Conditions vCES T j =25°C to150°C VcOR T j = 25° C to 150° C; RGE=

Contextual Info: nixYS IGBT with Diode IXSK 50N60BU1 IXSX 50N60BU1 VCES ^C25 VCE sat = 600 V = 75 A = 2.5 V Short Circuit SOA Capability PLUS247 (IXSX) Symbol Test Conditions v CES ^ 600 V v C0R T j = 25° C to 150° C; RGE= 1 600 V v BES Continuous ±20 V VGEM Transient

DS4307

Abstract: ite60f06 L120A "welding circuit " IGBT 12v dc motor igbt control
Contextual Info: Si G E C P L E S S E Y PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4307 -1.2 ITE60F06/ITE60C06 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The IT E 6 0X 06 is a robust n-channel, enhancem ent mode insulated gate bipolar transistor IG BT designed for

Contextual Info: BIXYS Advanced Technical Information Ultra-Low VCE sat IGBT with Diode IXGH 31N60D1 IXGT 31N60D1 CES C25 V CE (sat) 600 V = 60 A = 1.7 V oc Combi Pack §_ü^3 i ) ÒB Symbol Test Conditions Maximum Ratings V CES T j = 2 5 °C to 1 5 0 °C 600 V V CGR T j = 25=C to 150° C; RGE = 1 M ii

Contextual Info: nixY S HiPerFAST IGBT with Diode IXGH39N60BD1 V CES ^C25 V CE sat tn Symbol Test Conditions V CHS T j = 2 5 ° C to 1 5 0 c C 600 V V C GR T , = 25° C to 150° C; RGF = 1 M il 600 V V GES Continuous 120 V Transient +J30 V <c2S T c = 2 5 °C 76 A C90

VF-45

Abstract: EM012-V3EA VF-45TM fiber 100base TM-1310
Contextual Info: 3.3V VF-45 Transceiver for 100Base-FX TM 1310 nm LED for Multimode Fiber E2O Communications, Inc. EM012-V3EA Preliminary Data Sheet The transmitter consists of a high-performance 1310-nm LED while the receiver consists of an Indium Gallium Arsenide InGaAs PIN and a preamplifier.

sda 5708

Abstract: fan speed lm358 fan speed control lm358 lm358 pin diagram report on colpitts oscillator FDC658 LM358 temperature controlled fan fan speed control circuit using lm358 automatic fan speed control by room temperature AUTOMATIC fan speed control circuit using lm358
Contextual Info: www.fairchildsemi.com FMS2704/FMS2704L Smart TTV Hardware Monitor Features • • • • • • • • • • • Tachometer inputs are monitored continuously with speeds compared with internal limits stored in registers. Individual fan speeds can be sensed through the six TACH inputs.

irgni120f06

Contextual Info: International H Rectifier PD-9.974C IRGNI120F06 "CHOPPER" IGBT INT-A-PAK Fast Speed IGBT VŒ = 600V •Rugged Design •Simple gate-drive •Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses lc = 120 A

DIODE C817

Abstract: DIODE C813 953B IRGTI050U06 C814 C817 C813
Contextual Info: International ï «k Rectifier PD-9.953B IRGTI050U06 "HALF-BRIDGE" IGBTINT-A-PAK Ultra-fast Speed 1GBT VCE = 600V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 2 5K H z hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó

12 VOLT 150 AMP smps

Abstract: IGBT 50 amp 1000 volt LC BRIDGE CIRCUIT diode v3e igbt 500V 15A OM9034SF OM9035SF 12 VOLT 100 AMP smps IGBT gate driver schematic 10 AMP 1000V RECTIFIER DIODE
Contextual Info: OM9034SF OM9Q35SF HALF BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 30 And 25 Amp IGBT Module With Soft Recovery Rectifier, Half Bridge Configuration With Gate Drivers FEATURES • • • • • Hermetic Isolated Metal Package

diode b24a

Abstract: diode v3e Mitsubishi transistor QM600H
Contextual Info: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES

Contextual Info: OM6OL6OHB QM50F60HB Prelim inary Data Sheet OM45LI20HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Current, High Voltage 600V And 1200V, Up To 75 A m p IG BT s With F R E D Diodes. Half -Br id ge Con fig ura tio n FEATURES •

dt300

Abstract: J600C
Contextual Info: FUJI 2 [!^ [M â T ü S O Ë M B I 7 5 2-Pack IGBT 1200 V 75 A F - 1 2 Û IGBT MODULE { F series • Features • Low Saturation Voltage • Voltage Drive • Variety of Power Capacity Series ■ Applications • Inverter for Motor Drive • AC and DC Servo Drive Amplifier

OM9038SF

Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
Contextual Info: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design

Contextual Info: OM6529SS OM653QSS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability

OM6512SC

Abstract: OM6513SC
Contextual Info: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off

Contextual Info: OM6518SS OM6519SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability

700 v power transistor

Contextual Info: OM6529SS QM6530SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt. 15 Am p, N-Channel IGBT In A H e rm e tic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability

Contextual Info: HITACHI 2SD2108-Silicon NPN Triple Diffused Low Frequency Power Amplifier Absolute M aximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage v cao 80 V Collector to emitter voltage VC£0 80 V Emitter to base voltage V ebq 7 V Collector current

200v dc motor igbt

Abstract: 005D
Contextual Info: 2-Pack IGBT 600 V 75 A FU J! êü M Ië IGBT MODULE L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter fo r M otor Drive • AC and DC Servo Drive A m p lifier • Uninterruptible P ow er Supply

diode 65d

Contextual Info: FUJI SüJMsulJälJK 2SK2754-01L,S FAP-IIS Series > Features - N-channel MOS-FET 450V 0,65D 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated