DIODE UG Search Results

6AY3-B

Abstract: 6ay3 tube 75MIN general electric
Contextual Info: PRODUCT INFORMATION Page 1 Diode TUBES FOR TV DAMPING DIODE APPLICATIONS The 6AY3-B is a single heater-cathode type diode designed for use as the damping diode in the horizontal-deflection circuit of television receivers. GENERAL ELECTRICAL M ECH A N ICA L

38HK7

Abstract: 38hk7 tube td301 bp 3125 i437 general electric
Contextual Info: PRODUCT INFORMATION Page 1 Compactron Diode-Pentode TUBES The 38HK7 is a compactron containing a high-perveance diode and a beam-power p e n t o d e . The diode is intended for service as the damping diode and the pentode as the horizontal-deflection amplifier in television receivers.

IC 556 pin DIAGRAM

Abstract: E12-70 general electric
Contextual Info: E L E C T R O N IC TN A C TIO N — PRODUCT INFORMATION — Page 1 6BZ3 Compactron Diode TUBES FOR TV DAMPING DIODE APPLICATIONS The 6BZ3 is a compactron containing a single heater-cathode type diode intended for service as the damping diode in the horizontal-deflection circuit of television receivers.

UAF41

Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
Contextual Info: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver­ wendung als H.F.-, Z.F.- und H.F. Verstärker

l7001

Contextual Info: LASER DIODE NDL7001 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode especially designed fo r optical data com m unications. The M ultiple Quantum Well MQW structure can achieve stable operation at high tem perature {+85 "Ci.

6CG3

Abstract: 6CG3 tube E12-70 general electric
Contextual Info: — PRODUCT INFORMATION — Page 1 6CG3 Compactron Diode TUBES • COLOR TV TYPE FOR TV DAMPING DIODE APPLICATIONS • LOW TUBE DROP • 5000 VOLTS DC • DIFFUSION BONDED CATHODE • 350 MILLIAMPERES DC The 6CG3 is a compactron containing a single heater-cathode type diode. It is intended

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :

DD200S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :

DD200S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *

DD200S33K2C

Abstract: ZS4500
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :

DD200S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 1 $ % 7 28 % & & 1 5*" & -. *

DD1200S33K2C

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DD1200S33K2C Vorläufige Daten preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values $ % ' * +, '() * +, 23 % 7 28 & 1 5*" & -. * & :

Contextual Info: UG2M43224RRG T -6 16M Bytes (4M x 32) DRAM 72Pin SIMM based on 4M X 16 W/DIODE General Description Features The UG2M43224RRG(T)-6 is a 4,194,304 bits by 32 SIMM module.The UG2M43224RRG(T)-6 is assembled using 2 pcs of 4Mx16 4K refresh DRAMs in 50 pin TSOP package and with diode

12G2

Abstract: 12T2
Contextual Info: I2f2 A b OHHOH flH O A -TpH O fl Double diode-triode The 12T2 double diode-triode is designed for low-frequency detection and pre-amplification. The 12T2 double diode-triodes are enclosed in JlBO H H bie ÄHOA-TpHOÄbi 1 2 F 2 BbinycKafOTCH b metal case and are provided with an octal base

L5070

Abstract: LS061 L7s00 dl7550
Contextual Info: DATA SHEET NEC LASER DIODE MODULE N D L7550P ELECTRON DEVICE 1 5 5 0 nm InGaAsP MQW-DC-PBH-PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER D ESC R IPTIO N N DL7550P is a 1 550 nm pulsed laser diode, that has a newly developed Multi-Quantum Well MQW structure, D IP module

DF600R12IP4D

Abstract: diode 9-f 1N6760
Contextual Info: Technische Information / technical information DF600R12IP4D IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Feldstopp IGBT4, größerer Emitter Controlled 4 Diode PrimePACK™2 module with Trench/Fieldstop IGBT4, increased Emitter Controlled 4 diode

marking PA

Abstract: CPH3106 CPH6701 "marking PA"
Contextual Info: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.

FF300R12ME3

Contextual Info: Technische Information / technical information FF300R12ME3 IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter

FF900R12IP4

Abstract: AM2101 E10010
Contextual Info: Technische Information / technical information FF900R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

FF200R06ME3

Contextual Info: Technische Information / technical information FF200R06ME3 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EconoDUAL™2 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC

FF600R12IP4

Contextual Info: Technische Information / technical information FF600R12IP4 IGBT-Module IGBT-modules PrimePACK 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC PrimePACK™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

KY701

Abstract: FP50R06W2E3
Contextual Info: Technische Information / technical information FP50R06W2E3 IGBT-Module IGBT-modules EasyPIM Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC