DIODE TRANSIENT Search Results

V6CH

Abstract: diode ch9
Contextual Info: TVS Rail Clamp / Avalanche Diode SP0506CAA, SP0506CAB, SP0518CAA Transient Voltage Suppression Rail Clamp Diode Array with Avalanche Diode Features This family of rail clamp or “diode steering” arrays are designed for very low capacitance ESD protection and is

diode selection guide

Contextual Info: Appendix Introduction to Filter Connectors Transient Voltage Suppression Diode Selection Guide Diode Power Selection for Lightning Strike Waveform Threats DO 160 Waveform 1 MHz Damped Ringing Sine Level Open Circuit Voltage/Short Circuit Current V/A Diode Peak Voltage

Contextual Info: AOZ8211 0ne-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. This device incorporates one TVS diode in an ultra-small

AOZ8211NI-12L

Abstract: AOZ8211 AOZ8211NI-05L MARKING 05L
Contextual Info: AOZ8211 One-line TVS Diode General Description Features The AOZ8211 is a one-line transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

laptop keyboard schematic

Contextual Info: TVS Avalanche Diode Array Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC Transient Voltage Suppression Avalanche Diode Array in a Chip Scale Package This family of avalanche diode arrays are designed for ESD protection and is offered in an ultra small chip scale package.

SOD523 land pattern

Abstract: alpha date code System MARK BE diode SOD523 general MARKING ESd SOD523 AOZ8221 AOZ8221NI-05L
Contextual Info: AOZ8221 One-line Bi-directional TVS Diode General Description Features The AOZ8221 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small

AOZ8231NI-05L

Abstract: AOZ8231 alpha date code System sod923
Contextual Info: AOZ8231 One-line Bi-directional TVS Diode General Description Features The AOZ8231 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small

aoz8231

Abstract: AOZ8221 AOZ8221NI-05L SOD523 land pattern MARKING CODE AOZ AOS date code System
Contextual Info: AOZ8221 One-line Bi-directional TVS Diode General Description Features The AOZ8221 is a one-line bi-directional transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD. ● This device incorporates one TVS diode in an ultra-small

LTC4358

Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
Contextual Info: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

Contextual Info: AOZ8311 410W Peak Power One-line TVS Diode General Description Features The AOZ8311 is a one-line 410W peak power transient voltage suppressor diode designed to protect voltage sensitive electronics from high transient conditions and ESD.  This device incorporates one TVS diode in an ultra-small

Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

diode SOD-323

Abstract: SOD-323 Marking A2 marking e1 SOD K73 Package BAS70 BAS70WS A2 SOD323 sod-323
Contextual Info: SOD-323 Plastic-Encapsulate Diode SCHOTTKY DIODE BAS70WS SOD-323 Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection 1.70 1.30 Marking: BAS70WS:K73 0.30 • · · 1.00 Features 2.65 Unit:mm Maximum Ratings and Electrical Characteristics, Single Diode @ TA = 25°C unless otherwise specified

1N6468U

Contextual Info: Transient Voltage Suppressor-Unidirectional 500W Diode PART NUMBER: 1N6468U PACKAGE STYLE:MELFTVS CONFIGURATION:Transient Voltage Suppressor-Unidirectional 500W Diode -All ratings are @ Tc = 25 °C unless otherwise specified. MAXIMUM RATINGS / ELECTRICAL CHARACTERISTICS

Solar Charge Controller

Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

Contextual Info: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier

Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

1N6161

Contextual Info: 1N6161 1N6161A SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 854, REV - TRANSIENT VOLTAGE SUPPRESSOR DIODE 1500 Watt DESCRIPTION: A 55.8 VOLT, 20 MILLIAMP, AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSOR DIODE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS

1N6102A

Abstract: 1N6102
Contextual Info: 1N6102 1N6102A SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 285, REV - TRANSIENT VOLTAGE SUPPRESSOR DIODE 500 Watt DESCRIPTION: 5.2 VOLT, 175 MILLIAMP, AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSOR DIODE. MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING

DD200GB40

Abstract: DD200GB80
Contextual Info: DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure