DIODE T40 Search Results

Contextual Info: CD42_ _90 CD47 90 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 SCR/Diode POW-R-BLOK Module 90 Amperes/1600 Volts Description: CD42_ _90, CD47_ _90 SCR/Diode POW-R-BLOK™ Module 90 Amperes/1600 Volts Powerex SCR/Diode Modules are

Contextual Info: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.

DIODE SMD t04

Abstract: BAV105 smd T04 PHILIPS SMALL SIGNAL DIODE
Contextual Info: Philips Semiconductors Product specification High-speed diode BAV105 FEATURES DESCRIPTION • Small hermetically sealed glass SMD package The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD8OC SMD

thermistor 40k

Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Contextual Info: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

Contextual Info: 19-4344; Rev 0; 10/08 KIT ATION EVALU E L B AVAILA Dual, 7.5V to 76V, Hot-Swap and Diode ORing Controller The MAX5963 dual hot-swap and diode ORing controller provides complete protection for dual-supply high availability systems. The device operates from 7.5V to

high voltage circuit breaker

Abstract: 6v to 7.5v dc power supply circuit bp 103-5 DIODE BP ORing diode JESD51-7 MAX5080 XMAX5963 max5963 si7222
Contextual Info: 19-4344; Rev 0; 10/08 KIT ATION EVALU E L B AVAILA Dual, 7.5V to 76V, Hot-Swap and Diode ORing Controller The MAX5963 dual hot-swap and diode ORing controller provides complete protection for dual-supply high availability systems. The device operates from 7.5V to

Contextual Info: b b S S ' m 0024363 2T5 « A P X N AMER PHILIPS/DISCRETE BAV105 b?E D J V ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SOD80C envelope. QUICK REFERENCE DATA Continuous reverse voltage VR max. Repetitive peak reverse voltage

Contextual Info: N E C ELECTRONICS INC bSE D m b457525 0D3ÛGS1 755 H N E C E DATA SHEET LASER DIODE MODULE N EC ELECTRON DEVICE NDL5803P, NDL5803PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTION PACKAGE DIMENSIONS

t40hfl100s05

Abstract: E78996 t85hfl100s05 T70HFL20S02
Contextual Info: International loRjRectifier Part Number T40HFL10S02 T40HFL20S02 T40HFL40S02 T40HFL60S02 Power Modules Diode, Fast •F AV @ Vr r m (V) 100 200 400 600 T40HFL10S05 T40HFL20S05 T40HFL40S05 T40HFL60S05 T40HFL80S05 T40HFL100S05 100 200 400 600 800 1000 T40HFL10S10

5M3T

Abstract: z1071 BAV105 BAW62
Contextual Info: • bbSa^Bl 00243Ô3 STS * A P X N AMER PHILIPS/DISCRETE BAV105 b?E » J V_ ULTRA HIGH-SPEED DIODE Silicon planar epitaxial, ultra-high speed, high conductance diode in a SODSOC envelope. Q U IC K R E F E R E N C E D A T A Continuous reverse voltage Repetitive peak reverse voltage

E78996

Abstract: E.78996 E78996 Diode B40HFL40S10 T70HFL100S05 F 78996 78996 E 78996 IRKEL56-06S02 IRKEL56-04S02
Contextual Info: International S Rectifier Power Modules Diode, Fast Part Number B40HFL10S02 B40HFL20S02 B40HFL40S02 B40HFL60S02 B40HFL10S05 B40HFL20S05 B40HFL40S05 B40HFL60S05 B40HFL80S05 B40HFL100S05 B40HFL10S10 B40HFL20S10 B40HFL40S10 B40HFL60S10 B40HFL80S10 B40HFL100S10

35w4

Abstract: 35w4, tube I960 35w4 tube rs tube tube 35W4 ET-T407C general electric
Contextual Info: 35W4 ET-T407C Page 1 35W4 P0y^ 5-60 DIODE TUBES FOR HALF-WAVE POWER-RECTIFIER APPLICATIONS DESCRIPTION AND RATING The 35W4 is a miniature half-wave rectifier for use in line-operated equip­ ment having series-connected heaters. The heater is tapped to permit operation

diode ys2 100

Abstract: N4921 N4918 1N4000-series LA431 n4919 1n4000 DIODE 1n4000 sERIES DIODES 1N823 1N34* diode
Contextual Info: INTERNATIONAL SEMICOND •=1000370 0000007 T40 « I S E M 41E T H t- ~o JEDEC REGISTERED, TEMPERATURE 1N4148 SWITCHING DIODE COMPENSATED VOLTAGE REFERENCE DIODES (DO-7 Package MAXIMUM RATINGS MECHANICAL O pe rating Tem perature: -6 5 °C to + 2 0 0 °C H e rm e tic a lly Sealed DO-35

f650

Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Contextual Info: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S

shockley diode

Contextual Info: T40R06220300 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k

FL80S05

Abstract: FL10S05
Contextual Info: In te rn a tio n a l IÖ R Rectifier Part Number VRRM V & Fast Recovery Diodes 1 fa v @t c (A) (C) •fsm 50 Hz 60Hz (A) (A) % (V) RQK(DC) (K/W) t rr (nS) Fax on Demand Number Notes Case Outline Key Diode T-M odule T40HFL10S02 100 40 70 400 420 1.6 0.85

FUH -29A001B

Abstract: buk638 BUK638-800A BUK638-800B WO 02S
Contextual Info: Philips Components D atasheet status Prehmriary specification * * • of Im o * March 1991 GENERAL DESCRIPTION N-channel enhancement mode fieW-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable tor motor control applications, eg. in

Contextual Info: in Comlinear Corporation I Wideband, Low Power Monolithic Op Amp C LC 406 '! f . APPLICATIONS: • ■ H I FEATURES typical : video distribution amp HDTV amplifier flash A/D driver D/A transim pedance buffer pulse amplifier photo-diode amp LAN amplifier •

T1081N

Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Contextual Info: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N

Contextual Info: 19-3682; Rev 0; 5/05 2-Channel Temperature Monitor with Dual, Automatic, PWM Fan-Speed Controller Features ♦ 2 Thermal-Diode Inputs ♦ Up to 25kHz PWM Output Frequency ♦ 3 Selectable SMBus Addresses ♦ Local Temperature Sensor ♦ 1°C Remote Temperature Accuracy

Contextual Info: 19-3682; Rev 0; 5/05 2-Channel Temperature Monitor with Dual, Automatic, PWM Fan-Speed Controller Features ♦ 2 Thermal-Diode Inputs ♦ Up to 25kHz PWM Output Frequency ♦ 3 Selectable SMBus Addresses ♦ Local Temperature Sensor ♦ 1°C Remote Temperature Accuracy

amd athlon PIN LAYOUT

Abstract: digital tachometer CMPT3906 KST3906-TF MAX6639 MAX6639AEE MAX6639ATE SST3906 2N3904 2N3906
Contextual Info: 19-3682; Rev 0; 5/05 2-Channel Temperature Monitor with Dual, Automatic, PWM Fan-Speed Controller Features ♦ 2 Thermal-Diode Inputs ♦ Up to 25kHz PWM Output Frequency ♦ 3 Selectable SMBus Addresses ♦ Local Temperature Sensor ♦ 1°C Remote Temperature Accuracy

T40N10

Contextual Info: MTB40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for

t40n10e

Abstract: T40N10 2305 SOT-23 MTB40N10ET4 AN569 MTB40N10E sot-223 body marking A G
Contextual Info: MTB40N10E Preferred Device Power MOSFET 40 Amps, 100 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for