DIODE T37 Search Results

smd diode 106a

Abstract: smd 106a SOD106A diode t37 BYG90-90 philips Schottky diode very high current schottky diode diode package outline schottky barrier rectifier diode 15 A schottky barrier
Contextual Info: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD

smd diode 106a

Abstract: DIODE MARKING B85 smd diode byg SOD106A smd 106a byg 100 diode smd diode 1S BYG90-90 B85 diode smd diode byg 20
Contextual Info: Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD

Contextual Info: P D - 917 0 5 International l R Rectifier IRF7322D1 PRELIMINARY FETKY MOSFET/ Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low V F Schottky Rectifier Generation 5 Technology

T589N

Abstract: TO41 TO-50 TO57 disc thyristor TO100 D1029N D1049N D2209N D2659N
Contextual Info: Anpreßkraft Scheibenbauelemente Clamping Force Disc-Components Diagramm: Federsäulenkurven 1 - 8 für Komplettsätze for complete stacks Diode Diode D428N D448N D660N D748N D758N D798N D1029N D1049N D2209N D2228N D2659N D5809N D8019N Anpreßkraft [kN] Clamping Force [kN]

ITT DIODE

Abstract: 1n4151 ITT 150D 1N4151 500D LL4151 INTERMETALL
Contextual Info: ITT SEHICOND/ INTERHETALL blE T> Mt Mbfl2711 QGQ31Sb 040 * i s i LL4151 Silicon Epitaxial Planar Diode Cathode Mark -1 5 * 0 .1 -H fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JE D E C 1N4151

kdi 64537 switch

Abstract: 64537
Contextual Info: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS REFLECTIVE SP4T DIODE SWITCH MODEL SWM-1400 0.5-18.0 GHz GENERAL INFORMATION The Model SW M -1400 SP4T PIN Diode switch operates over the full fre ­ quency range 0 .5 -1 8 .0 G H z in a single unit. KDI/Triangle has integrated

OLD222

Abstract: Infrared Emitting Diode OLP222 Light Emitting Diodes diode t37
Contextual Info: O K I electronic OLP222 components GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD222 is a high-output GaAl A s infrared light em ission diode sealed with a glass lens in a To18 case. Its light em ission w ave is peaks at 910 nm. Because of its sharp directivity, multiple units

CHN 952

Abstract: TD100
Contextual Info: vtS H A Y ▼ _TSML3700 Vishay Telefunken GaAs/GaAIAs Infrared Emitting Diode in SMT Package Description T S M L3700 is an infrared em itting diode in G aAIAs on G aAs te chn olo gy in a m iniature P L -C C -2 SM D package. It has been designed to m eet the increasing dem and

Contextual Info: Temic TSMS3700 S t m i c o n d u c i u r s GaAs Infrared Emitting Diode in SMT Package Description T SM S 3700 is a standard G aA s infrared em itting diode in a m iniature P L -C C -2 package. Its fiat w indow provides a w ide aperture, m aking it ideal for use w ith external optics.

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

T1081N

Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Contextual Info: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N

Schaffner IU 1237

Abstract: Schaffner 1237 NSG506C 7R2R23
Contextual Info: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS

Contextual Info: TRM7934AN OC-48 Transmitter Description The TRM7934AN is a lightwave transmitter for OC-48. Features • Complied with SONET/SDH standard • MQW-DFB laser diode • Operation from 52Mb/s to 2488.32Mb/s at 1.55 wavelength • 50£2, AC-coupled interface •

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

ITE15F12

Contextual Info: 5Ü GEC PLESS EY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4315-1.2 ITE15F12/ITE15C12 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE15X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for

new bright R288-2

Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Contextual Info: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz

Contextual Info: OPTO DIODE CORP SSE D • kflOmfl 000013Ü TTO ■ O P D / - y / - /J> HIGH-POWER GaAIAs T-1V 4 IR EMITTERS OD-8812 FEATURES .217 • Cost effective plastic package .055 ir • 880nm peak emission • Wide angle of emission MIN 0 20 SQ .060 MIN • High reliability LPE IRLED chips

T3B diode

Abstract: 1SV160 t37s
Contextual Info: TO SHIBA ÍDIS CRE TE /OP TO} b7 9097250 TOSHIBA DISCRETE/OPTO I a i i j ^ • DE I TDTTESO □□□T37S ñ . Q 67C 0937 5 Silicon Epitaxial Planar Type ■ w w Variable Capacitance Diode Unit in mm AFC APPLICATION FOR FM RECEIVER. + Û 5 2 .5 -0 1 3 +CL2 5

TD-220AB

Abstract: ESAB33
Contextual Info: ESAB33 CS i5A) K FAST RECOVERY DIODE ‘ Features • . ® & 6 L m * v 7 W h e b / 4 x /j '- f s o Soft recovery, low noise. m mm&m High reliability C o n n e ctio n D iagram : A p p lica tio n s High speed power sw itching. M a xim u m Ratings and C haracteristics

2N4949

Abstract: 2N4948
Contextual Info: MO TO R O L A SC DIODE S/ OPT O 2SE D b3t72-SS 0000=130 4 • _ T -3 2N4948 2N4949 PN Unijunction Transistors Silicon PN Unijunction Transistors , . . d e s ig n e d fo r m ilita ry a n d in d u s tria l u s e in p u lse , tim in g , trig g e rin g , se n sin g ,

TRF 530

Abstract: 317 lz K122 ST Low Forward Voltage Schottky Diode 2G21 FCQ10A03L TEG 105
Contextual Info: SCHOTTKY BARRIER DIODE 10A/30V fcqioao3l 3. K . 122 FEATURES MAX o S im ila r to T 0 -2 2 0 A B C ase 'MAXi 10. 3 .4051 3. 4( . 1M )„ . MAX "I/ Ä H « A ~W O F u lly M olded Iso latio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C athode C om m on

1RF9640

Abstract: IRF9640
Contextual Info: International |g»i Rectifier HEXFET P o w e r M O S F E T • • • • • • • 4855455 0Ql4 2 t37 - 1NR PD9422B IRF9640 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q