DIODE T03 Search Results

Contextual Info: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode

BAS32

Abstract: diode bas32 IEC134 BAS32 sod80
Contextual Info: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat

Contextual Info: FFA60UP30DN 60 A, 300 V, Ultrafast Dual Diode Features • Ultrafast Recovery, Trr = 55 ns @IF = 30 A Description • Max. Forward Voltage, VF = 1.5 V (@ TC = 25°C) • Reverse Voltage: VRRM = 300 V The FFA60UP30DN is an ultrafast diode with low forward

Contextual Info: FFA60UA60DN UItrafast ll Dual Diode Features Description • Ultrafast Recovery, Trr = 90ns @ IF = 30 A The FFA60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of

F60UP30DN

Contextual Info: FFA60UP30DN 60 A, 300 V, Ultrafast Dual Diode Description Features • Ultrafast Recovery, Trr = 55 ns @IF = 30 A The FFA60UP30DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a

OLD223

Abstract: 910nm L7E454G light emitting diode configuration
Contextual Info: OKI electronic com ponents OLP223 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD223 is a high-output GaAIAs infrared light emission diode sealed with flat glass in a TO-1B case. Its light emission w ave peaks at 910 nm. Because of its high reliability, theOLD223 can

Contextual Info: FFA40UP35S 40 A, 350 V Ultrafast Diode Features Description • Ultrafast Recovery, trr < 55ns @ IF = 40 A The FFA40UP35S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching

DD50R

Contextual Info: O rd e rin g n u m b e r: EN 2800A _ DD50R Diffused Junction Type Silicon Diode Ultrahigh-Definition Display Damper Diode Features • High breakdown voltage Vrrm : 1500V . • High reliability. • Capable of being mounted easily and dissipating heat rapidly because of one-point fixing type plastic

FFA60UP20DN

Contextual Info: FFA60UP20DN 60 A, 200 V, Ultrafast Dual Diode Features Description • • • • • The FFA60UP20DN is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other

BY509

Abstract: diode BY509
Contextual Info: _ U _ N AMER PHILIPS/DISCRETE QbE D ^53= 131 D 0H 01S 4 • EJYDUa T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended fo r use in high-voltage applications such as m ulti­ pliers, e.g. tripler circuits. The device features non-snap-off characteristics. Because o f the smallness of

Contextual Info: N AMER PHILIPS/DISCRETE = TOD D 0800160 AMPEREX, 90D 10652 D • ^ 5 3 1 3 1 OOlQbSS S SLATERSVILLE t-03-M PHSD51 JV SCHOTTKY-BARRIEB RECTIFIER DIODE High-efficiency rectifier diode in a DO—5 metal envelope, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. It is intended for use in low

2SC3953

Abstract: TRANSISTOR T0220 2SC3597
Contextual Info: Horizontal deflection output composite transistor Absolute maximum ratings _ . I Package . Application T IT Vcbo Vcbo nn (V) HPA72R* T03PBL °"!fk (wilh high-speed damper diode) HPA100R T03PBL “ H PA.M T03PBL * “ “ “ Ä T Vceo Vceo lc >c Electrical characteristics (T, = 25 deg. C)

Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ Applications RoHS compliant* Protects 1 line ESD protection 30 kV max. ■ ■ ■ ■ RS-232, RS-422 & RS-423 data lines Portable electronics Wireless bus protection Control & monitoring systems CDSOT23-T03LC~T36LC — Low Capacitance TVS Diode Array Series

n925

Contextual Info: Ordering number : EN2583A smyo i i No.2583A _ S B 8 - 1 8 Schottky Barrier Diode Twin Type • Cathode Common 180V, 8A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers)

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

N2690

Contextual Info: Ordering number : EN2690 No.2690 SB 250-09 Schottky Barrier Diode Twin Type • Cathode Common SAPfVO i 90V, 25A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers) Features • Low forward voltage (Vp max = 0.85V)

BUZ211

Contextual Info: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.

Contextual Info: O rd e rin g n u m b e r : EN2582A N0.2582A _ S B 1 2 - 1 8 Schottky B arrier Diode Twin Type • Cathode Common 180V, 12A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers)

2SK1778

Abstract: 2SJ236 2SK1776 2SJ299 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2SK1778

Abstract: 2SK1776 2SJ236 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094 2SK1777
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

ST DIODE T03

Abstract: STTA112U
Contextual Info: STTA112U TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 1A V rrm 1200V tir Vf (typ) 65ns (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS: SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION

Contextual Info: Ordering number : EN1982A SB 1 6 0 - 0 5 H N0.1982A Schottky Barrier Diode Twin Type - Cathode Common 50V, 16A Rectifier A pplications • High frequency rectification (switching regulators, converters, choppers) F eatu res • Low forward voltage (Vp max = 0.55V)

2SD1397

Abstract: 2SC2271 transistor 2SC2271 2S01397 ic 30359
Contextual Info: SANYO SEMICONDUCTOR CÔRP ISE D I 7 ^ 707 ^ 000SD7S T ' 3 3 - / 3 2SD1397« N PN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications with Damper Diode 1223C Features: . High breakdown voltage and high reliability.