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    DIODE SY 360 Search Results

    DIODE SY 360 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    DIODE SY 360 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


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    III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337 PDF

    sy 320 diode

    Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
    Contextual Info: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren


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    PDF

    6P45S

    Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
    Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D


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    TGLIO395 III/I8/379 6P45S 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550 PDF

    D360SC6M

    Abstract: L017
    Contextual Info: Schottky Barrier Diode Diode Module •¿m u OUTLINE Package I Module D360SC6M Unit : mm W eight 66R T yp> Isi Ö 51 3-M4 nui thickness = 3.2 60V 360A p, Feature •« V • High lo Rating-Module-PKG • Low V f • Small 9 je f • 8 jcÖ ^/JV c^L' 0 1 °


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    D360SC6M CJ533-1 D360SC6M L017 PDF

    848 diode

    Contextual Info: OPTEK Product Bulletin OPB847 July 1996 Slotted Optical Switches Types OPB847, OPB848 r .360 6.6 BOTTOM VIEV, D1KMSION5 *SE IN INChCS [WILLINTERS Features Absolute Maximum Ratings (Ta = 25° C unless otherwise noted) • Non-contact switching • Apertured for high resolution


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    OPB847 OPB847, OPB848 848 diode PDF

    diodes sy 360

    Abstract: diode sy 161
    Contextual Info: Philips Sem iconductors Product specification General purpose double diode BAV23 PINNING FEATU RES D E S C R IP T IO N • Sm all plastic S M D package The B A V 23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the


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    BAV23 diodes sy 360 diode sy 161 PDF

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    PDF

    Halbleiterbauelemente DDR

    Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
    Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.


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    DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170 PDF

    BUK454-400B

    Abstract: T0220AB PPD-25
    Contextual Info: N AMER b^E PHILIPS/DISCRETE D • hhS3^3l □□3Db2D BUK454-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,


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    hhS3131 BUK454-400B T0220AB BUK454-400B T0220AB PPD-25 PDF

    Contextual Info: TOSHIBA 2SK2551 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2551 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


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    2SK2551 PDF

    Diode SY 356

    Abstract: SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt
    Contextual Info: SERVICE-M ITTEILUNGEN V E B IN O U S T R tE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite 1986 1-4 Mitteilung aus den VEB Fernsehgerätewerk Staßfurt 1. Ablösung der sowjetischen Ge-Diode D 7 D in den Geräten


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    2001/DBBtjT Diode SY 356 SY 356 sy356 34992 diode sy 345 C6042 Lautsprecher LP SY360 sy 360 stassfurt PDF

    lN4148

    Abstract: DIODE LN4148 lN4744 Lloyd H. Dixon 2N3904 ND 24 volt output smps design
    Contextual Info: \ dii' C 'h iM T V S o n i i i o i i d m t o r t o r p o r . i t i o n This application note describes the common post regulation methods used in power supply design and introduces the CS5101 Secondary Side Post Regulator Control IC. It also shows a detailed design example o f a dual output, current mode control, forward


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    CS5101 CS3842A P4845-ND P4800-ND P4806-ND P4812-ND P4814-ND P4880-ND lN4148 DIODE LN4148 lN4744 Lloyd H. Dixon 2N3904 ND 24 volt output smps design PDF

    LM4250

    Abstract: OP-32 OP32AZ OP32EP OP32EZ OP32FP OP32FZ OP32GP OP32GZ SY 360 05
    Contextual Info: ANALOG ► DEVICES High-Speed A ^ > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • O R D E R IN G IN F O R M A T IO N v osMAX (HV) 300 300 500 1000 CERDIP 8-PIN — OP32EP OP32FP OP32GP


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    OP-32 500nA 115dB 000V/mV 110dB, OP-32B/F OP-32, LM4250 OP-32 OP32AZ OP32EP OP32EZ OP32FP OP32FZ OP32GP OP32GZ SY 360 05 PDF

    DXT170-71-1

    Abstract: SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171
    Contextual Info: 3 Port Solenoid Valve Rubber Seal Series SYJ300/500/700 SY Low power consumption: 0.5W Without light (Current draw: 21mA at 24V DC) Completely interchangeable with the previous series VJ300/500/700 and VZ300/500. Series VZ SYJ300 VJ300 SYJ500 VJ500 VZ300


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    SYJ300/500/700 VJ300/500/700 VZ300/500. VJ300 SYJ500 VJ500 VZ300 SYJ700 VJ700 SYJ300 DXT170-71-1 SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171 PDF

    VK334V

    Abstract: diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171
    Contextual Info: 3 Port Direct Operated Poppet Solenoid Valve Rubber Seal Series VK300 Model Universal porting Valve Model Available for N.C. valve, N.O. valve, divider valve, selector valve, etc. Nl/min: 196 Compact/Width 18 X Length 63 mm Low consumption 4W DC (Standard)


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    VK300 VK332 VK332Y VK332E VK332V VK332W VK334 VK334Y VK334E VK334V diode sy 715 VK332E tabela varistor VK334Y 220v ac solenoid valve VKF334-G-01 ozono VK332W "DIODE" SY 171 PDF

    mikroelektronik ddr

    Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
    Contextual Info: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden


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    BC 148 TRANSISTOR

    Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
    Contextual Info: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA


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    61-cm-Ger BC 148 TRANSISTOR transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung PDF

    BUZ171

    Contextual Info: /TLintAB_ asss TECHNOLOGY program m able M icropow er Hex Translator / Receiver / Driver F € A T U ft€ S D6SCRIPTIOA • ■ ■ ■ ■ ■ ■ ■ The LTC1045 is a hex level translator manufactured using Linear Technology’s enhanced LTCMOS silicon gate


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    LTC1045 V24ZA50 LTC1045 110BC BUZ171 PDF

    Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions


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    H11J1-H11J5 PDF

    Contextual Info: SEM ICONDUCTOR U10A2CIA TE CHNICAL DATA ULTRA FAST RECOVERY RECTIFIER DIODE SW ITC H IN G TY PE POW ER SUPPLY APPLICATIO N C O N V E R T E R & CH O PP E R A PPLICATION. SJ MILLIMETERS 10.0±0.3 15.010.3 FEA T U RE S 2.70+0.3 0.76+0.09/-0.05 <t>3.2±0.2 3.010.3


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    U10A2CIA O-220IS PDF

    ETIT

    Contextual Info: TOSHIBA MIG15Q804H TENTATIVE TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15Q804H HfGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLiCATIONS • In te g ra te s In verter, C onverter Pow er C ircu its in One P ack ag e. • O u tpu t Inverter S tag e


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    MIG15Q804H 25/iS ETIT PDF

    SMC - SY5120

    Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
    Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based


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    SY9000 SY3000 SY5000 SY7000 SMC - SY5120 SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode PDF

    Contextual Info: Application Note 1779 Author: Barry Kates Configuring Current Sharing on the ZL6105 and ZL8101 Introduction TABLE 2. COMPLETE ISHARE_CONFIG FIELD This application note describes the features and setup procedure for the ZL6105 and ZL8101 digital DC controllers


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    ZL6105 ZL8101 ZL8101 AN1779 PDF

    p32a

    Abstract: S450N
    Contextual Info: ANALOG DEVICES □ High-Speed /V > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • p re c is io n Programmable Supply Current. 500nA to 2mA Single Supply Operation. +3Vto+30V


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    OP-32 OP-32, gain-of-100 15/xA 500kn p32a S450N PDF