DIODE SY 350 Search Results

4N29-4N33

Contextual Info: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E

Diode SY 350

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAILS Î FM M V105G - 4EZ ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C

11F2

Contextual Info: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H I IF fam ily con sists o f a g alliu m -a lu m in u m -a rse n k le in fra re d e m ittin g d io d e co u p led to a sy m m etrical b ila te ra l silicon p h o to d e te cto r.

TS01 DIODE

Abstract: 2232 R 012 S FJ CHEMICALS diode sy 200
Contextual Info: TLP270D TOSHIBA TENTATIVE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-MOS FET /PHOTO-TRANSISTOR t• i p ? 7m n nmmr m M O BILE/N O TE PCs U n it in mm PDAs M ULTIM EDIA TVs 15141312 1110 M OD EM S TLP270D has many multi-functions in D A A circuits for modems,

"DIODE" SY 171 1 g

Abstract: diode sy 171 Diode SY 345 diode sy 171 10 diode sy 170 "DIODE" SY 171 1 "DIODE" SY 171 ds 1494 1428m
Contextual Info: AD VA NC E D POWER TECHNOLOGY M IE D • □SST'IO'i 00Q 0Sfl2 fllG HAVP A d van ced po w er Te c h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOST MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise

6P45S

Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D

diode sy 200

Abstract: diode sy 180 10 diode sy 400 8 pnp 8 transistor array ttl transistor kp 18P4G 20P2N-A M63840FP M63840KP M63840P
Contextual Info: MITSUBISHI SEMICONDUCTOR 【TRANSISTOR ARRAY】 M63840P/FP/KP PRELIMINARY 8-Unit 500mA Source Type Darlington Transistor-Array With Clamp Diode ＊Notice: This is not a f inal specif ication. Some parametric limits are subject to change. DESCRIPT ION PIN CONFIGURATION （TOP VIEW）

C1685 transistor

Abstract: transistor c1684 Cl684 MCT-2201 MCT2200 C1685 C1681 TRANSISTOR C1685 C1285 H127
Contextual Info: GENL INSTR-i OPTOELEK flfl GÉNÉRAL INSTRUMENT DE | 3ÔT015Ô DOOETbT T | ~ VDE APPROVED p h o to tra n sisto r op toco u p le rs DVE PACKAGE DIMENSIONS [& eg] DESCRIPTION Æi r* { 6.86 .270 6.35 (.250) 0.36 (.014) I 0.20 (.008) O WWW T 8.89 (.350) 7.62

diode sy 171 10

Abstract: diode sy 171 Diode SY 345 "DIODE" SY 171 "DIODE" SY 171 1 diode sy 170 LD 757 ps SY 345 APT40M42BFN Diode SY 350
Contextual Info: AD VA NC ED PO WE R T E C H N O L O G Y MIE D Hi □SST'JCH 0 0 0 0 5 0 8 AIO M A V P A dva n c ed P o w er ^ Tec h n o lo g y APT40M42BFN 400V 95.0A 0.042 APT35M42BFN 350V 95.0A 0.042 POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEp*

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

JESD22-A114

Abstract: JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9600D PCA9600DP
Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 04 — 11 November 2009 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

JESD22-A114

Abstract: JESD78 P82B96 PCA82C250 PCA9600 PCA9601 AN10658
Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

PCA9601

Abstract: AN10658 diode sy 104 JESD22-A114 JESD22-A115 JESD78 P82B96 PCA82C250 PCA9600 PCA9601DP
Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 01 — 28 May 2010 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

APT40M80AFN

Abstract: APT35M80AFN
Contextual Info: ADVANCED POWER TECHN0L06Y 4^E □ BST'lD'l 0 0 0 0 5 0 4 D Op{2 tTB « A V P A dvanced > P : O W E R - i ~ - 3 ° ) - 1s Techno lo g y APT40M80AFN 400V58.0A 0.08f APT35M80AFN 350V 58.0A 0.08^ Ô S 2 ) POWER MOS IV N - CHANNEL ÈNHANCEMENT MODE HIGH VOLTAGE POWER MOSFE

BUK455-400B

Abstract: T0220AB
Contextual Info: N ACIER P H I L I P S / D I S C R E T E b^E D • bhSBTBl 0D3GbS5 3 1 2 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: PCA9601 Dual bidirectional bus buffer Rev. 2 — 6 May 2011 Product data sheet 1. General description The PCA9601 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9601 is a

P82B96

Abstract: JESD22-A114 JESD78 PCA82C250 PCA9511A PCA9600 PCA9600D PCA9600DP AN10658
Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

Contextual Info: PCA9600 Dual bidirectional bus buffer Rev. 5 — 5 May 2011 Product data sheet 1. General description The PCA9600 is designed to isolate I2C-bus capacitance, allowing long buses to be driven in point-to-point or multipoint applications of up to 4000 pF. The PCA9600 is a

Contextual Info: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF052SURCE HYPER RED EBLF052MGC MEGA GREEN EBLF052SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: www.eLED.com 4mm FLANGE BASED LED LAMPS Package Dimensions EBLF041SURCE HYPER RED EBLF041MGC MEGA GREEN EBLF041SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSSCURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: www.eLED.com 5mm FLANGE BASED LED LAMPS Package Dimensions EBLF051SURCE HYPER RED EBLF051MGC MEGA GREEN EBLF051SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Diode SY 350

Contextual Info: www.eLED.com 10mm SCREW BASED LED LAMPS Package Dimensions EBLS101MGC MEGA GREEN EBLS101SURCE HYPER RED EBLS101SYC SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .

Contextual Info: SILICON M O N O L I T H IC B IP O L A R D IG IT A L IN T E G R A T E D CIRCUIT TD62786AFN 8ch HIGH-VOLTAGE SOURCE-CURRENT DRIVER The TD62786AFN is eight Channel Non-Inverting Source current Transistor Array. All units feature integral clamp diodes for switching inductive loads. Applications include

Contextual Info: www.eLED.com 10mm BAYONET BASED LED Package Dimensions LAMPS EBLB102MGC MEGA GREEN EBLB102SURCE EBLB102SYC HYPER RED SUPER BRIGHT YELLOW Features 1.BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT APPLICATION OF DIFFERENT ACROSS CURRENT. 2.LONG LIFE. Notes: 1. All dimensions are in millimeters inches .