DIODE SY 124 Search Results

sy 320 diode

Abstract: sg 4001 diode GER-A sy 360 KT802A KY transistor diode sy 104 KT 315 a KT 802 mitteilung aus dem veb rft
Contextual Info: S E R V I C E - M I T T E I LU HClüN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN { p is i! ! r a d i o -televisioni | JANUAR 1982 4 1 SEITE 1-4 Mitteilung aus dem VEB Fernsehgerätewerke "Friedr. Engels" Staßfurt Farbreinheitsstörungen bei In-line-Bildröhren

atheros

Abstract: transistor wes BUK436-100B c17f BUK436-100A
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

diode sy 162

Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"

diode sy 180 10

Contextual Info: TOSHIBA TC74LVX240F/FW/FS TC74LVX244F/FW/FS Octal Bus Buffer TC74LVX240 Inverted, 3-State Outputs TC74LVX244 Mon-Inverted, 3-State Outputs The TC74LVX240 and 244 are high speed C M O S OCTAL BU S BUFFERS fabricated using silicon gate C 2M O S technol­ ogy.

Contextual Info: T C 7 4 L V Q 1 5 7 F / F N / F S QUAD 2 -CH AN N EL M ULTIPLEXER The T C 7 4 L V Q 1 5 7 is a high speed CM OS M U L T IP L E X E R fabricated with silicon gate and double - lay er m etal w iring C 2M O S technology. Designed for use in 3.3 V o lt system s, it ach ieves high speed

act11244

Abstract: 74AC11244N
Contextual Info: S ig n e tic s 7 4 A C /A C T 1 1244 O ctal Buffer/Line Driver; 3-State Product Specification ACL Products GENERAL INFORMATION FEATURES C O N D IT IO N S • Octal bus Interface SYM BOL • 3-State buffers UNIT A • Output capability: ± 24 mA • CMOS AC and TTL (ACT) voltage

Contextual Info: TOSHIBA TC74VHC10F/FN/FS/FT TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHC10F, TC74VHC10FN, TC74VHC10FS, TC74VHC10FT TRIPLE 3 -INPUT NAND GATE The TC74VHC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated w ith silicon gate C2MOS technology.

c17f

Abstract: IE-02 BUK436-100A BUK436-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711DS2b DObHfl^b c17fl • P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended tor use in

TD62000

Abstract: TD620003FB TD620004
Contextual Info: SILICON MONOLITHIC TD62003FB TD62004FB BIPO LAR DIGITAL INTEGRATED CIRCUIT 7CH DARLINGTON SINK DRIVER The TD62003FB series are high-voltage, high-current darlington drivers comprised of seven NPN darlington pairs. All units feature integral clamp diodes for switching

lN4148

Abstract: DIODE LN4148 lN4744 Lloyd H. Dixon 2N3904 ND 24 volt output smps design
Contextual Info: \ dii' C 'h iM T V S o n i i i o i i d m t o r t o r p o r . i t i o n This application note describes the common post regulation methods used in power supply design and introduces the CS5101 Secondary Side Post Regulator Control IC. It also shows a detailed design example o f a dual output, current mode control, forward

BC 148 TRANSISTOR

Abstract: transistor BC-148 DIODE ga transistor bc 148 bc 147 B transistor service-mitteilungen 2GA113 "service-mitteilungen" sc236c RFT Service Mitteilung
Contextual Info: SE RV IC E-M ITTEILUN GEN television | VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN f a li | r a d i o - AUGUST 1981 8 SEITE 1-4 Beobachtungssohwerpunkte hinsichtlich der Brandgefahren bei den SU - Farbfernsehgeräten RADUGA 5BG, -706, -726 und -730 Eine Analyse der Brandursachen an o.g. Cerätetypen außer RADUGA

100 kilo ohms resistor specifications

Abstract: PCA96XX PCA9306 69RC BAT54A LPC932 P82B96 PCA9600 PCA9633 PCA9665
Contextual Info: I2C Maximum Clock Speed Calculator Mar 2009 BLSIC/BU MMS NXP semiconductors I2C-Bus Maximum Clock Speed Calculator Excel file of Calculator > Double click to open. If this is a PDF then go to URL

SMC - SY5120

Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based

temic k 153 p

Abstract: Si994
Contextual Info: Tem ic AN710 S e m i c o n d u c t o r s High-Efficiency Buck Converter for Notebook Computers Robert Blattner Introduction Today, the u n teth erin g o f e lectro n ic e q u ip m en t has given rise to the n eed fo r lig h tw eig h t p o w er sources and p o w er

s 5225

Abstract: PIN laser DIODE 780nm 30mw
Contextual Info: LCQ78530S5-N/M/P AlGaAs Laser Diode Ver. 0 2004 ♦OVERVIEW LCQ78530S5-N/M/P is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive lig ht s ource, wit h a typic al light outp ut p ower of 3 0mW for ind ustrial o ptical m odule

scr preregulator

Abstract: LM396 LT1038 LT1038CK lm396 high voltage regulator scr use in lead acid battery charger 12v transistor 1038 BATTERY CHARGER ACID
Contextual Info: rrurn. TECHNOLOGY LT1038 10 Amp Positive Adjustable Voltage Regulator F€flTUR€S D€SCRIPTIOn • Guaranteed 0.8% Initial Tolerance ■ Guaranteed 0.4% Load Regulation ■ Guaranteed 10 Amp Output Current ■ 100% Thermal Limit Burn-in ■ 24 Amp Transient Output Current

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

AX3002

Contextual Info: A N A LO G ► D E V IC E S High-Speed %CL> 10 Programmable Micropower Operational Amplifier OP-32 precision perform ance when the OP-32 is used with an unregulated battery or vehicular electrical system. FEA TU R ES • • Program m able Supply C u rre n t. 500nA to 2mA

IS0103

Abstract: s7501
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « IS0103 Low-Cost, Internally Powered ISOLATION AMPLIFIER FEATURES APPLICATIONS • SIGNAL AND POWER IN ONE DOUBLE-WIDE 0.6” SIDE-BRAZED PACKAGE • MULTICHANNEL ISOLATED DATA

LCQ7853S5-M

Abstract: 780nm laser diode
Contextual Info: LCQ7853S5-N/M/P AlGaAs Laser Diode Ver.2 2004 ♦OVERVIEW LCQ7853S5-N/M/P is a MOCVD grown 780nm band AlGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 3mW for Laser Beam Printer, industrial optical module and sensor application

MOSFET 333

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT4430 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UT4430 uses UTC advanced technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for applications, such as high-side

LCD based digital alarm clock with digital thermometer

Abstract: atmega128 485 code example JFM24011-0101T full duplex max485 atmega128 USART C code examples ATMEGA128 projects MAX485 SMD wireless weather monitoring USING MICROCONTROLLER avr lcd 2x16 K6T1008
Contextual Info: Ethernet Minimodule User’s Manual REV 0.9 , lu ard ST Sta rve a , e o Ev B VR ers b S l d n io 1, A trol We mo t a ‘5 n d ni ri o e r c fo cro dd s M the e s d e i m mb oar rs, peC E B e S PI its ng roll gh r K pi nt Hi fo r y o rte tot roc FID ers s o c

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP