DIODE SR 360 Search Results
DIODE SR 360 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE SR 360 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
transmission lines Twisted Pair spice model
Abstract: graphic video card schematic v05 SOT SRV05-4 MARKING V05 Marking code AB SOT-23 Diode
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srv05-4transmission lines twisted pair spice modelgraphic video card schematicv05 sot+2 | |
transmission lines Twisted Pair spice model
Abstract: video isolation transformer V05-4
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srv05-4transmission lines twisted pair spice modelvideo isolation transformerv05-4 | |
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Contextual Info: 2-1 TEL: 852-26909605 FAX: 852-26909606 E-mail: grandhalo@hutchcity.com b INFRARED EMITTING DIODE Rev: A 紅外線發射二極體 Date: 2002/10/19 GH-WR008 Electro-Optical Characteristics: Code for parts GH-XXXXX Material ISFZ03TR-08E GaAs VF V λ (nm) Power (mW/Sr) |
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gh-wr008isfz03tr-08e008inch15ifications+6 | |
SHINDENGEN DIODEContextual Info: y 3 y h ^ n 'U T ^ V ^ - K $ -i ¿ s — K i v Schottky Barrier Diode_ j.- J I' Diode Module D360SC3M l f j ^ t Ä 0 _ OUTLINE DIMENSIONS Case : Modules 30V 360A •fflcVt • e jc / jv j^ in •*3Ü SR « g •D C /D C 3 y K - 9 m x s k ^ y t h - 'jp |
OCR Scan |
d360sc3mshindengen diode | |
SR1503
Abstract: SR1502 SR1504
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sr1502sr1504mil-std-202sr1503 | |
BPV10
Abstract: Avalanche photo diode compatible with 850 nm LED AN243 color sensitive PHOTO TRANSISTOR DK-2750 TSHF5400 infrared 950nm United Detector Technology, silicon photodiode AN243 microchip
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an243dk-2750d-85737nl-5152+7 | |
TSHA6501
Abstract: TSHA6503 TSHA6500
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tsha6500tsha6501tsha6502tsha6503+4 | |
TSHA5500Contextual Info: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm |
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tsha5500tsha5501tsha5502tsha5503+4 | |
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Contextual Info: s e MIKRO n Absolute Maximum Ratings Symbol Conditions Values v Vos V dgr Id V V A A A V W °C V 200 200 120 87 360 ±20 500 55 . .+150 2 500 C la ss F 55/150/56 R g s = 20 k£i Tease —25 °C Tcase - 85 °C Id m V gs Pd Tj, Tstg Visol humidity climate Units |
OCR Scan |
m120b25 | |
FAN480X
Abstract: fairchild TL431 programmable 1.0.2 FAN6210MY FCP20N60 JESD22-A114 diode dual SR2. 8 pc817 dual
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fan6210fan6206fan480xfairchild tl431 programmable 1.0.2+5 | |
FSR630
Abstract: FSR660 pc817 fairchild FAN480X FCP20N60 FAN6210MY JESD22-A114 zd 5.6v uf1007 DIODE pc817 dual
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fan6210fsr660/630fsr630fsr660+8 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
Eye SafetyContextual Info: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws |
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22-jan-15eye safety | |
FAN6206
Abstract: fan4801 1N4148 JESD22-A114 dual-Forward fan6210
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fan6206fan48011n4148jesd22-a114+2 | |
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Contextual Info: LT3669/LT3669-2 IO-Link Transceiver with Integrated Step-Down Regulator and LDO Description Features n n n n n n n n n n IO-Link PHY Compatible COM1/COM2/COM3 Cable Interface Protected to ±60V Operation from 7.5V to 40V Integrated Step-Down Switching Regulator |
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lt3669/lt3669-2100malt3669300ma+6 | |
VARISTOR S10k275
Abstract: IRFB3206 DIODE NU 1N4148smd full bridge smps resonance snubber NCP1397 NCP1397A ferrite transformer atx power supply FUSE SH22,5A capacitor 1000 MF
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and8460/dncp4303bncp1605ncp1397b+10 | |
Symbols and Terminology
Abstract: symbols IEC-60050 IEC-60050-845 photoelectric detector L-53MGD IC specification terminology ic 555 use with metal detector iec 60050 circuit diagram of luminous metal detector
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18-aug-08symbols and terminologysymbolsiec-60050+7 | |
symbolsContextual Info: Symbols and Terminology Vishay Semiconductors Symbols and Terminology A anode Anode terminal A ampere SI unit of electrical current A radiant sensitive area That area which is radiant sensitive for a specified range a distance E.g. a distance between the emitter source |
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06-oct-06symbols | |
IEC-60050
Abstract: IEC-60050-845 IEC60050 IEC60747-5-1 IEC60747-5-3 IEC50 IC specification terminology IEC60747-5-2 IEC60825-1 short distance measurement ir infrared diode
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06-oct-06iec-60050iec-60050-845iec60050+7 | |
IEC-60050
Abstract: IEC-60050-845 IEC60050 IEC50 IEC60747-5-1 IEC60747-5-2 IEC60747-5-3 IEC60825-1
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17-oct-03iec-60050iec-60050-845iec60050+5 | |
IEC-60050
Abstract: PHOTOVOLTAIC CELL at 25 degree celsius photodiode application lux meter human eye IEC60050 IEC60747-5-1 IEC60747-5-2 IEC60747-5-3 IEC60825-1 IEC-60050-845 circuit diagram of luminous metal detector
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25-aug-06iec-60050photovoltaic cell at 25 degree celsiusphotodiode application lux meter human eye+7 | |
TSHF6210Contextual Info: TSHF6210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Peak wavelength: λp = 890 nm • High reliability • High radiant power |
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tshf62102002/95/ec2002/96/ec18-jul-08 | |
TSFF5210Contextual Info: TSFF5210 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1 3/4 Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm |
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tsff52102002/95/ec2002/96/ec18-jul-08 | |
TSHG8200Contextual Info: TSHG8200 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Peak wavelength: λp = 830 nm High reliability |
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tshg82002002/95/ec2002/96/ec18-jul-08 | |