DIODE SMD GEM Search Results

D 819

Contextual Info: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V

Contextual Info: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C

Contextual Info: Preliminary Data Sheet IXGH32N50BU1 IXGH32N50BU1S Hi Per FAST IGBT with Diode Combi Pack V CES ^C25 v CE sat K 500 V 60 A 2.0 V 80 ns TO-247 SMD (32N50BU1S) Symbol Test Conditions v CES Td = 25°C to 150°C V C3R T.J = 25°C to 150°C; RrF bb V eES V GEM

IXSX35N120AU1

Abstract: K 545 K 54502DC1BE4-EE9A-CA45-A06A-97C9C8D484E3/websocket?url=http://www.datasheetarchive.com/pdf/download
Contextual Info: High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S PLUS 247 package V I CES C25 VCE SAT Short Circuit SOA Capability 1200 V 70 A 4V PLUS 247™ SMD (IXSX35N120AU1S) Preliminary data Symbol Test Conditions 'AB) Maximum Ratings VCES Tj = 25°C lo150°C

Contextual Info: □ IXYS Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 V IXSX35N120All 1S I Combi Pack Short Circuit SOA Capability CES 1200 V 70 A C25 V 4V CE SAT PLUS TO-247 SMD (IXSX35N120AU1S) Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C

Contextual Info: D 1 X Y S Preliminary data HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S Combi Pack v CES ^C25 vv CE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N 60AU 1S) Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600

smd diode A1

Abstract: DIODE smd marking A1 A1 SMD DIODE DIODE smd marking A1 package sot23 BAW56 a1 diode smd marking code e1 smd smd diode marking a1 smd diode code A1 DIODE package sot23 smd marking A1
Contextual Info: СПЕЦИФИКАЦИЯ components High-speed double diode BAW56 Features • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 450 mA

SMD a7 diode BAV99

Abstract: BAV99 smd DIODE code marking Q smd diode code A7 Diode BAV99 SOT23 smd diode a7 capacitance diode marking T1 marking code BAV99 Diode bav99
Contextual Info: СПЕЦИФИКАЦИЯ components High-speed double diode BAV99 Features • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 450 mA

IXGH20N60BU1

Abstract: IXGH20N60BU1S HIPERFAST IGBT WITH DIODE IXGH20N60BU1 TO-247 IXYS DIODE SMD GEM TAA 521 D
Contextual Info: □ IXYS Preliminary data IXGH20N60BU1 IXGH20N60BU1S HiPerFAST IGBT with Diode V CES ^C 25 V CE(sat)typ Combi Pack *fi(typ) = 600 V = 40 A = 1.7 V = 100 ns TO-247 SMD* Symbol Test Conditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

30N60

Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO

MJI-25

Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2

Contextual Info: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

931 diode smd

Abstract: g20n60
Contextual Info: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

igbt to247

Abstract: s9011 IXGH24N60AU1S ixgh24N60
Contextual Info: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25

BC 247 B

Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Contextual Info: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25

32N60BU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C

pml 003 am

Abstract: ic pml 003 am pml 009 S1 DIODE cih smd pml 603 am smd diode code B2 diode bzw 06 26 G003 G008
Contextual Info: iC-NZ LASERDIODEN-PULSREGLER Ausgabe B2, Seite 1/20 EIGENSCHAFTEN ANWENDUNGEN ♦ Spitzenwertgeregelter Dreikanal-Laserschalter für CW- und Pulsbetrieb bis 155 MHz ♦ Spike-freies Schalten des Laserstroms bis ca. 100 mA pro Kanal in Summe max. 320 mA aus 3.5 bis 5.5 V

0603WAJ0103T5E

Abstract: CL10B474K08NNNC 0603WAJ0000T5E 712 transistor smd sot23 smd transistor 6p smd diode L27 CL10F105Z08NNNC CRG16GT V810 schottky diode C1608NP0100JGT
Contextual Info: Datum: 15/07/2008 SL V 8 .10 SLSLLI33.RPT SL-S-D-12 Digital_Logic AG DETAIL-STUECKLISTE Nr. :811060-VO.3 MSEBX8 00. V0.3 von SCM Erstellt am Pos.:Lay: Art.Nr. 1 490520 Bezeichnung : Seite: CH-4542 Luterbach Nr.811060-V0.3. Lay.=0 Lay.=1 Lay.=2 Lay.=3 Lay.=4

24N60AU1

Contextual Info: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25

24n60au1

Abstract: 24N60U1 24n60 TO-247 weight C600 igbt 24n60au1 24N60U
Contextual Info: HiPerFASTTM IGBT with Diode VCES IXSH 24N60U1 IXSH 24N60AU1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES V CGR T J = 25°C to 150°C600 T J = 25°C to 150°C; R GE = 1 MW V 600 V V GES V GEM Continuous Transient ±20 ±30 V V I C25

CSTCV14

Abstract: murata GRM42-6X5R475K10 100NF 25V/0603 10-22pF 16MHz ceramic RESONATOR xtal GRM42-6X5R475K10 DOC107979A1 SSOP24 iso 7816-1 SMD c3
Contextual Info: GemCore Serial Lite PRO Technical Specifications All information herein is either public information or is the property of and owned solely by Gemplus S.A. who shall have and keep the sole right to file patent applications or any other kind of intellectual property protection in

24N60AU

Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Contextual Info: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V