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    DIODE SG 82 Search Results

    DIODE SG 82 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE SG 82 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SKD 82 SEMIPONT 3 ?$]Q ?$$Q7 ?N$Q LN X => ¥ UB'+ .%48'. -%4W ? _>> =>> <K>> <_>> <H>> ? _>> =>> <K>> <_>> <H>> UA. X <<> ^OW ]YN =KZ>_ ]YN =KZ>= ]YN =KZ<K ]YN =KZ<_ ]YN =KZ<H <=>> <=>> ]YN =KZ<=IW Symbol Conditions LN A. X <<> ^O 2/ -()-;/ Z -48'.)-;/ +%,8


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    A12// 64-F/87 PDF

    SG DIODE

    Abstract: diode sg-64 diode sg 71
    Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1


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    W83773G/SG W83773G W83773SG SG DIODE diode sg-64 diode sg 71 PDF

    Contextual Info: SGT27B27, SGT27B27A, SGT27B27B Bidirectional Transient Surge Suppressors January 1998 S U T Q e C tO r Features Description • Clamping V oltage. 230V or 270V These surgector devices are designed to protect telecom m u­


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    SGT27B27, SGT27B27A, SGT27B27B 270mA PDF

    DC24V-48V

    Abstract: SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1
    Contextual Info: 1/8 001-02 / 20030510 / ea224_spb.fm Power Supplies DC Input Single Output, General-Purpose The S series SPB products are wide-input super-thin type (9mm max.) available for the 24V and 48V types. The super-thin and ultra-light design has been realized by means of a high-density


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    SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 50MHz DC24V-48V SPB05-1R0 SPB05-2R0 SPB12-R40 SPB12-R80 SPB24-R20 DC24V REMOTE RV-1 PDF

    SPB12-R80

    Abstract: SPB05-2R0 SPB05-1R0 1R0 choke A224 SPB12-R40 SPB24-R20 diode sg 69
    Contextual Info: A224_SPB 1/8 TDK Switching Power Supply Super-thin type DC.24 to 48V wide input power supply S SERIES SPB [FEATURES] • Wide-input (DC.20 to 56V) super-thin type single-output power supply. • Plastic package, onboard type. • Ultra-light. • Input-output floating.


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    SPB05-1R0 SPB12-R40 SPB24-R20 50MHz SPB12-R80 SPB05-2R0 SPB05-1R0 1R0 choke A224 SPB12-R40 SPB24-R20 diode sg 69 PDF

    SMD diode sg 46

    Abstract: 1n4148 zener diode SG 46 a DIODE SMD RK73H1JT1001F WECO filter C3216X7R2J223KT0L0U Y2 diode SG 21 DIODE SMD cl31b zener diode 15v
    Contextual Info: PRELIMINARY PFM V•I Chip PFM Power Factor Module • • • • • • • • • F3D480T20A DC+ Input: rectified 120/240 Vac sinusoidal Output: 48 Vdc programmable Output power: Up to 200 W 4,242 Vdc reinforced insulation 90% efficiency 375 W/in3 power density


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    F3D480T20A SMD diode sg 46 1n4148 zener diode SG 46 a DIODE SMD RK73H1JT1001F WECO filter C3216X7R2J223KT0L0U Y2 diode SG 21 DIODE SMD cl31b zener diode 15v PDF

    3sk251

    Contextual Info: Ordering number : EN4715B LA1193V Monolithic Linear IC High-Performance FM Front End IC for Car Radios http://onsemi.com Overview The LA1193V is front-end IC developed for use in car radios. It incorporates an extremely wide dynamic range mixer and a new AGC system consisting of a dual-system wide-band AGC and a new keyed AGC to provide excellent


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    EN4715B LA1193V LA1193V 3sk251 PDF

    PFC buck converter design

    Abstract: 1N4148 SMD PACKAGE 3 phase bridge fully controlled rectifier 1206 smd 100 ohm resistor sc 6200 Ferrite Bead TDK SMD diode sg 46 SG 21 DIODE SMD 1n4148 zener diode buck converter vout 100v
    Contextual Info: PRELIMINARY PFM V•I Chip PFM Power Factor Module • • • • • • • • • F3D480T20A DC+ Input: rectified 120/240 Vac sinusoidal Output: 48 Vdc programmable Output power: Up to 200 W 4,242 Vdc reinforced insulation 90% efficiency 375 W/in3 power density


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    F3D480T20A PFC buck converter design 1N4148 SMD PACKAGE 3 phase bridge fully controlled rectifier 1206 smd 100 ohm resistor sc 6200 Ferrite Bead TDK SMD diode sg 46 SG 21 DIODE SMD 1n4148 zener diode buck converter vout 100v PDF

    Contextual Info: SKiiP 39AHB16V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; '@ Y P S& ([ Diode - Chopper MiniSKiiP 3 (& M GF TUQV N; '@ Y P S& .$ .$1X ([ 3-phase bridge rectifier + brake chopper


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    39AHB16V1 PDF

    kl diode

    Abstract: international rectifier thyristor 282
    Contextual Info: SKiiP 28AHB16V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper K;CO .; .;1X K/CO & M GF N;L 4+8*&& 2'-* 79&* &@*,969*5 (& M GF TUQV N; '@ Y P S& ([ Diode - Chopper MiniSKiiP 2 (& M GF TUQV N; '@ Y P S& .$ .$1X ([ 3-phase bridge rectifier + brake chopper


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    28AHB16V1 kl diode international rectifier thyristor 282 PDF

    Contextual Info: HE8811 GaAIAs IRED Description The HE8811 is a 820 nm band GaAIAs infrared light emitting diode with a double heterojunction structure. Its high brightness, high output power and fast response make it suitable as a light source for measuring instruments and infrared-beam communication equipment.


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    HE8811 HE8811 HE8811: PDF

    HE8811SG

    Abstract: QZ50 HE8811
    Contextual Info: HE8811 GaAIAs IRED Description T he H E 8 8 1 1 is a 820 nm band G aA IA s infrared light em itting diode w ith a double heterojunction structûre. Its high brightness, high output pow er and fast response m ake it suitable as a light source for m easuring


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    HE8811 HE8811: HE8811SG QZ50 HE8811 PDF

    R012F

    Abstract: Siliconix mosfet guide XSTR C3225X5R1C226M LT3825 100ME22AX res 0603
    Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 894A-C 36V-72VIN, SYNCHRONOUS FLYBACK LT3825 DESCRIPTION Demonstration circuit 894A-C is a 36V-72Vin, synchronous flyback converter featuring the LT3825. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified flyback to


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    94A-C 6V-72VIN, LT3825 94A-C LT3825. 100ME22AXTS IHPL2525CZER4R7M01 R012F Siliconix mosfet guide XSTR C3225X5R1C226M LT3825 100ME22AX res 0603 PDF

    Contextual Info: HE8404SG GaAIAs IRED Description The HE8404SG is a 820 nm band GaAIAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for a wide range o f optical control and sensing equipment. Features Package Type


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    HE8404SG HE8404SG HE8404SG: 44Tia20S PDF

    IHPL2525CZER4R7M01

    Abstract: 6TPD470M FP2S-100-R CR16-2942FM CAP 2.2nF X7R 50V 1206 6TPD470 TDK C3225X5R0J476MT IHPL2525 AAC CR16-4123FM 2.2nF X5R 1206
    Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 894A-B 36V-72VIN, SYNCHRONOUS FLYBACK LT3825 DESCRIPTION Demonstration circuit 894A-B is a 36V-72Vin, synchronous flyback converter featuring the LT3825. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified flyback to


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    94A-B 6V-72VIN, LT3825 94A-B LT3825. C3225X5R0J476MT 06033C103KAT IHPL2525CZER4R7M01 6TPD470M FP2S-100-R CR16-2942FM CAP 2.2nF X7R 50V 1206 6TPD470 TDK C3225X5R0J476MT IHPL2525 AAC CR16-4123FM 2.2nF X5R 1206 PDF

    flyback xfmr transformer

    Abstract: 100ME22AX 10nF 100V 0603 COG 0603 C3225X5R1C226M 16CE150BS AAC CR16-4123FM IHPL2525CZER4R7M01 diode sg 94 PA1736NL CRCW0603000ZRT6
    Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 894A-C 36V-72VIN, SYNCHRONOUS FLYBACK LT3825 DESCRIPTION Demonstration circuit 894A-C is a 36V-72Vin, synchronous flyback converter featuring the LT3825. This circuit was designed specifically to attain a high current, low ripple, synchronously rectified flyback to


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    94A-C 6V-72VIN, LT3825 94A-C LT3825. 100ME22AXTS IHPL2525CZER4R7M01 flyback xfmr transformer 100ME22AX 10nF 100V 0603 COG 0603 C3225X5R1C226M 16CE150BS AAC CR16-4123FM IHPL2525CZER4R7M01 diode sg 94 PA1736NL CRCW0603000ZRT6 PDF

    Contextual Info: HE8404SG GaAIAs IRED Description The HE8404SG is a 820 nm band GaAIAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for a wide range o f optical control and sensing equipment. Features Package Type


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    HE8404SG HE8404SG PDF

    diode sg 46

    Contextual Info: SKB 72 SEMIPONT 3 ?$AR ?$$R7 ?N$R LN X ¥> ] UB'+ .%48'. -%4W ? `>> =>> <K>> <`>> <H>> ? `>> =>> <K>> <`>> <H>> U^. X <>< _OW AY9 ¥KZ>` AY9 ¥KZ>= AY9 ¥KZ<K AY9 ¥KZ<` AY9 ¥KZ<H <=>> <=>> AY9 ¥KZ<= Symbol Conditions LN ^. X =J _O 2/ -()-;/ Z -48'.)-;/ +%,8


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    64-F/87 diode sg 46 PDF

    transistor P18 FET

    Abstract: PA1954NL KFH-032-6 TEPSLV0J227M c86 sot23 PA0955 transistor SMD p16 PA1382 Q12-Q15 DC888A
    Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-B 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-B is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-B provides an isolated


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    88A-B 6V-72VIN, LTC3725/LTC3706 88A-B LTC3725 LTC3706. DC888A-B DC888A 250kHz P1-10 transistor P18 FET PA1954NL KFH-032-6 TEPSLV0J227M c86 sot23 PA0955 transistor SMD p16 PA1382 Q12-Q15 PDF

    nec 2501

    Abstract: DIODE FS 604 c86 sot23 CRCW12065R10 CAP 10nF 200V 0603 2501-2-00-80-00-00-07-0 transistor P18 FET 2N7002-SOT23 AC Transformer 50A 100V LTC3706
    Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 888A-A 36V-72VIN, ISOLATED SYNCHRONOUS FORWARD LTC3725/LTC3706 DESCRIPTION Demonstration circuit 888A-A is a high power isolated synchronous forward converter featuring the LTC3725 and LTC3706. When powered from a 3672V input, a single DC888A-A provides an isolated


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    88A-A 6V-72VIN, LTC3725/LTC3706 88A-A LTC3725 LTC3706. DC888A-A DC888A 250kHz J1-10 nec 2501 DIODE FS 604 c86 sot23 CRCW12065R10 CAP 10nF 200V 0603 2501-2-00-80-00-00-07-0 transistor P18 FET 2N7002-SOT23 AC Transformer 50A 100V LTC3706 PDF

    Motorola transistor smd marking codes

    Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
    Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,


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    PDF

    IRF820

    Abstract: IRF822
    Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


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    IRF820/821/822/823 O-220 IRF820 IRF821 IRF822 IRF823 PDF

    p-MOSFET soft start 60v

    Abstract: LX1912 LX1912CSG p-MOSFET soft start 70v
    Contextual Info: LX1912 VREF @ 800mV, 1.0A, 1.2MHz PWM TM P RODUCTION D ATA ƒ Internal Reference 800mv ±2% Accuracy Line and Temp. ƒ 4.0V to 6.0V Input Range ƒ Internal Soft Start ƒ Adj. Output From 0.8V to 90% of VIN ƒ Output Current up to 1.0A ƒ Quiescent Current < 550 A,


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    LX1912 800mV, 800mv LX1912 p-MOSFET soft start 60v LX1912CSG p-MOSFET soft start 70v PDF

    Contextual Info: SGM330A Quad, Wide-Bandwidth SPDT Video Analog Switch GENERAL DESCRIPTION FEATURES The SGM330A is a quad, bidirectional, single-pole/ z Wide Bandwidth: 500MHz double-throw SPDT CMOS video analog switch z Low On-Resistance: 12Ω (TYP) (Mux/DeMux) designed to operate at a single +5V supply.


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    SGM330A SGM330A 500MHz -60dB 10MHz 500MHz) PDF