DIODE SG 45 Search Results

ESM4045DV

Contextual Info: SG S-TH O M SO N ESM4045DV NPN DARLINGTON POWER MODULE . . . . . . . HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R,h JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE

220v 25a diode bridge

Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Contextual Info: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A

220v 25a diode bridge

Contextual Info: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5

SC-0351

Contextual Info: rrr “ 7# sg s -th o m s o n m m s x m iim m im m b u lth s d HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . NPN TRANSISTOR . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE • HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS . MINIMUM LOT-TO-LOT SPREAD FOR

sgs25D

Contextual Info: 3ÜE V • TTE' ÌSB? D0 3GbS b T ■ r r 7 SGS-THOMSON ^ 7 # r IL U m « ! SG S25DA080D S G S-THOMSON NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS * LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

S-40T

Abstract: SGS40TA045 SGS40
Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

239D

Abstract: diode sg
Contextual Info: SEC _ PRELIMINARY SPECIFICATION LIGHT EMITTING DIODE ELECTRON DEVICE SG 239D FASHION LAMP Green -N E P O C SERIES — DESCRIPTION The SG239D is a fu ll resin m olded LED lamp and has a rectangular fla t face w hich em its b rillia n t green lig h t u n ifo rm ly . It is

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

SGS50DA045D

Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
Contextual Info: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

0809 al

Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Contextual Info: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

diode sg 45

Abstract: STTB506B transistor 600v 500a SG-45 diode fast recovery diode 400v 5A power DIODES diode sg 5a 5a son
Contextual Info: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTB506B(-TR) TURBOSWITCH " B " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.3V V f (max) tr r (typ) PRELIMINARY DATASHEET 45 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

SGSP369

Abstract: diode sg 5 ts
Contextual Info: r= Z SG S-TtiO M SO N lüítlDffl lilLi ir[M!lD gi SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS T YPE V DSS SGSP364 450 V 1.5 fi 5 A SGSP369 500 V 1.5 fi 5 A RDS(on Id • HIGH SPEED SW ITCHING APPLICATIO NS • HIGH VO LTAG E - FOR ELECTRO NIC LAM P

k 2645 MOSFET

Abstract: CD 4511 data sheet Directed Energy DE-150 "free energy" circuit k 2645
Contextual Info: ?F i4 9 9 9 S D IR E C T E D EN ERGY IN C ~ 97D DIRECTED ENERGY INC 0 0 0 14 T? D EÖ4cm s 0Q0DD14 S f DE-150 SERIES □ DATA SHEET DIRECTED ENERGY. INC. ^ DE-150 45IP02 SPECIFICATIONS % PULSID POWER COMPONtNTS AND SVSTfMS The Centre or Advanced Technology

Contextual Info: C T S G S -T H O M S O N ^ 7# . HDlgœilLIgTOOIfSlDgi BAT 45 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage

SG DIODE

Abstract: diode sg-64 diode sg 71
Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1

Contextual Info: rz 7 Ä 7# S C S -T H O M S O N K [LKgraOßie! VN30N HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VN30N V dss RDS on loUT Vcc 60 V 0.03 Q 45 A 26 V . OUTPUT CURRENT (CONTINUOUS): 45A @ Tc=25°C . 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN

Contextual Info: rz7 SGS-THOMSON ^7# MûœËŒOT «® STTB206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) 45ns Vf (max) PRELIMINARY DATASHEET 1.3V FEATURES AND BENEFITS • SPECIFIC TO ThE FOLLOWING OPEFtATIONS:

SGSP474

Contextual Info: r^ 7 S G S -T H O M S O N # » » H H H O T M lO Ê i SG SP474 SG SP475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on *D SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 U 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS

SEMIKRON SKIIP 20 NAB 12 T 17

Abstract: semikron skiip 21 nab 12 T 31 semikron skiip 21 nab 063 T 40 Semikron skiip 31 nab 12 skiip 10 nab 063 T 10 Semikron skiip 31 nab 12 T 10 SKiiP 31 NAB 12 T 16 semikron skiip nab 06 semikron skiip 32 nab 12 semikron skiip 32 nab 12 t 7
Contextual Info: se MIKROn SKiiP SG NAB GB Absolute Maximum Ratings Symbol C onditions 1 Values Units T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C T heatsink —25 I SG C tp < 1 ms; T heatsink —25 I SG C 6GG ± 2G S6 I 25 72 I 5G 57 I SS 114 I 76 V V A A A

76A SOD

Contextual Info: r z 7 S G S -m 0 M S 0 N ^ 7 # iMneiioniugC T iH iM iio STTB 206S TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 2A V rrm 600V trr (typ) 45ns V f (max) 1.3 V PRELIMINARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

Contextual Info: Æ T SGS-THOMSON n0MilU10TI3 [fflnei STTB506B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

sod6 package

Abstract: ST microelectronics diodes
Contextual Info: rz7 SGS-THOMSON ^ 7# M ûœ ËŒ O T «® ST T B 106U TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 1A V rrm 600V trr (typ) 45ns Vf (max) PRELIMINARY DATASHEET 1.3V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS :

Diode sg 9C

Abstract: mospet STK6875 hybrid ic pwm dc motor SG 6CA 24V DC motor for 24v for printer 24v dc motor drive circuit diagram hybrid ic pwm diode sg 8c 182cc
Contextual Info: Ordering number: EN 4554A Thick Film Hybrid 1C STK6875 No. 4554A Bidirectional DC Brush-type Motor Driver l0 max = 5A Overview Package Dimensions The STK6875 is a bridge-type power pack, bidirectional DC brush-type motor driver IC that incorporates Sanyo’s