DIODE SG 28 Search Results

Schaffner IU 1237

Abstract: Schaffner 1237 NSG506C 7R2R23
Contextual Info: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS

CB417

Abstract: smd diode Coloured band marked devices Smd code S08 CB429 DIL20 F126 S020 T0220AB SOD-6 DIMENSIONS CB417
Contextual Info: LVT3V3 SMLVT3V3 / = T SG S-THO M SO N * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

sgs25D

Contextual Info: 3ÜE V • TTE' ÌSB? D0 3GbS b T ■ r r 7 SGS-THOMSON ^ 7 # r IL U m « ! SG S25DA080D S G S-THOMSON NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS * LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

SGS25DB070D

Abstract: LC 0809 HALF BRIDGE NPN DARLINGTON POWER MODULE NPN DARLINGTON POWER MODULE sgs25D
Contextual Info: 3QE D • rz 7 ^ 7# TWSB? Q030bcJb D ■ SC S-TH O M SO N KilD DlH] [l[LiOU^(Q lD(gi s g S-THOMSON '" f ‘3> W 5 SG S25DB070D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS) . LOW Rth JUNCTION TO CASE > FREEWHEELING DIODE

S-40T

Abstract: SGS40TA045 SGS40
Contextual Info: 3DE D • 7^2^537 DG3GbS2 S ■ ' T ‘3>3' 5 fZ 7 SGS-THOMSON ^ 7# s SG S40T A 045D IL I « ! S G S-THQMSON NPN TRANSISTOR POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE . ADAPTED FOR HIGH POWER SWITCHING

SGS100D

Contextual Info: 3GE » m QD30bfl4 4 ^ _ ^ 3 3 - 3 > f Z 7 S G S -T H O M S O N ^ 7# SG S100DA020D " S G S-THOMSON NPN DARLINGTON POWER MODULE • POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE ■ FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

SGS50DA045D

Abstract: SGS50DA lta 301 L-93S transpack transistor SGS50DA045 SGS50D
Contextual Info: 3QE f Z d 7 ^ 7 # S G m TTS'iaa? G03Dhba ^ b • S G S -T H O M S O N c lU O T * ! SG S50D A 045D S - TH OM SO N NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

0809 al

Abstract: HALF BRIDGE NPN DARLINGTON POWER MODULE SGS30D
Contextual Info: 30E D /= 7 m 7121237 DD3D7QÔ 3 • S G S -T H O M S O N li^lD gi i[L[i ¥[i®[MD(gi s 6 THOMSON SG S3 0 D B 045 D HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS . LOW Rth JUNCTION TO CASE . FREEWHELING DIODE

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

NPN DARLINGTON POWER MODULE

Abstract: SGS50DB040D 9120 mosfet SGS50D
Contextual Info: J O E J r r z ^ 7 # s 1= H S 7^2^237 DD3D72D 4 • G S - T H O M S O _ N [» [H im iO T Q K S SG S50D B 040D HALF BRIDG E NPN DARLINGTO N PO W ER MO DULE G S-THOMSON . POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS) « LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

diode sr 60

Contextual Info: 28mm x 28mm AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0709-18-76 LED CLUSTER SUPER BRIGHT RED / BLUE SUPER BRIGHT GREEN Features Description l WATER with Gallium Aluminum Arsenide Red Light Emitting l HIGH

SG DIODE

Abstract: SG 21 DIODE BL0709-18-76 diode sr 60
Contextual Info: 28mm x 28mm LED CLUSTER BL0709-18-76 SUPER BRIGHT RED / BLUE SUPER BRIGHT GREEN Features Description ! HIGH The Super Bright Red source color devices are made VISIBILITY. ! WATER PROOF PACKAGE WITH HOOD SUITABLE FOR OUTDOOR AND INDOOR INFORMATION BOARDS. ! CAN

diode sg 08

Abstract: BL0709-18-349 PB25
Contextual Info: 28mmX28mm LED CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0709-18-349 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN PRELIMINARY SPEC Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made

Contextual Info: 28mmX28mm LED CLUSTER ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES BL0709-18-76 SUPER BRIGHT RED BLUE SUPER BRIGHT GREEN Description Features HIGH VISIBILITY. The Super Bright Red source color devices are made with WATER PROOF PACKAGE WITH HOOD SUITABLE

Contextual Info: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.

THOMSON-CSF CCD

Abstract: TH7981 SH-21 D2342 2SH11
Contextual Info: T 0 E b f i7 2 000234G 17fl TH 7981A MUX AND CORRELATED DOUBLE SAMPLING DUAL O U TPU T CCD SIGNAL PROCESSOR PIN IDENTIFICATION 20 - 50 MHz output data rate. LDCC 28 or PLCC 28 package. Designation Pin n° Symbol Specially designed for CCD with 21,24,26, VDD + 5 V Positive power supply

Contextual Info: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.

Contextual Info: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.

Contextual Info: 28mmX28mm LED CLUSTER Part Number: BL0709-18-462 Super Bright Red Blue Super Bright Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Description The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode.

TH7982A

Abstract: diode sg 27 diode sg 82 SH1 diode diode sg 28 ldcc THOMSON-CSF CCD sh3 1995
Contextual Info: ' ì OS bf l TE 00DS34L. _ TH 7982A CORRELATED DOUBLE SAMPLING CCD SIGNAL PROCESSOR Pixel frequency : PIN IDENTIFICATION • 2- 20 MHz. Version B ■ 2 - 5 MHz. Version A Input voltage up to 2 V. LDCC 28 or PLCC 28 package. Compatible with pixel correction.

Contextual Info: PS51787 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Intellimod Module Dual-In-Line Intelligent Power Factor Correction Module 20 Amperes/600 Volts G E F D D 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13

PS51787

Abstract: diode sg 71 diode sg 87 diode sg 38 bridgeless ic diode sg 46 bridgeless diode sg 28 SG 27 surge current n2 Diode Zener
Contextual Info: PS51787 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com G E F D D 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 F F D 12 11 10 D F F 6 5 4 9 8 7 M L D D DETAIL "A" 3 2 1 P 29 S 30 J B N K H HEATSINK U SIDE V P