DIODE S3 Search Results
DIODE S3 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE S3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
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hn2d01fuhn2d02fuot-23mod02cz5+9 | |
semikron skiip 942Contextual Info: SKiiP 942 GB 120 - 317 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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semikron skiip 942 | |
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Contextual Info: SKiiP 632 GB 120 - 315 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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Skiip 942 gb 120 317 ctv f
Abstract: semikron skiip 942
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skiip 942 gb 120 317 ctv fsemikron skiip 942 | |
igbt driver 314
Abstract: Driver 314 SEMIKRON SKiiP 342 GD 314 driver semikron skiip 342 SKIIP342GD Driver 314 ctv
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igbt driver 314driver 314semikron skiip 342 gd314 driver+3 | |
132-gd
Abstract: 132 gd 120 24v 125A IGBT Igbt 318
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132-gd132 gd 12024v 125a igbtigbt 318 | |
Skiip 942 gb 120 317 ctv f
Abstract: ctv circuit semikron skiip 942
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skiip 942 gb 120 317 ctv fctv circuitsemikron skiip 942 | |
IGBT PROTECTION INVERSE DIODEContextual Info: SKiiP 232 GD 120 - 313 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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igbt protection inverse diode | |
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Contextual Info: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode. |
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ndl7001b4s752sb427525 | |
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Contextual Info: SKiiP 302 GD 061 - 359 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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igbt11 | |
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Contextual Info: SKiiP 402 GD 061 - 358 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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igbt11rthjs10 | |
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Contextual Info: I LASER DIODE INC n • a e S3ÖE^ ÖS DDD 0 4 ä i 3 I L A H 6 0 SERIES L D F -16 0 SERIES M H M 6 0 SERIES » I LASER DIODE, INC. T-W -dg LASER DIODE ARRAYS WITH FIBER INTEGRATORS FEATURES ► Square Source of Uniform Intensity Up to 100 Watts Peak Optical Power Output |
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904nm890nm850nm780-880nm | |
S30VTA60
Abstract: high Forward Voltage Diode power diode 10a
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s30vta60s30vtaxhigh forward voltage diodepower diode 10a | |
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Contextual Info: S3A . S3M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /4 Surface mount diode Standard silicon rectifier diodes S3A.S3M 4 |
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"Power Diode" 10A 800v
Abstract: S30VTA80 high Forward Voltage Diode
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s30vta80s30vtaxpower diode" 10a 800vhigh forward voltage diode | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 + FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol |
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od-3231ss357100maiss357 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Diodes SOD-323 + FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits |
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od-3231ss357100maiss357 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes SOD-323 FEATURES z Small Package z Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol |
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od-3231ss357100maiss357 | |
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Contextual Info: bbSB'Ol D0242S4 250 « A P X N AMER PHILIPS/DISCRETE BAS32L b7E D J V HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed for fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-80C glass envelope with tin-plated |
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d0242s4bas32lod-80c100x1 | |
S30VT80Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VT80 CaseCase : 2F: SVT Unit : mm 800V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply |
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s30vt80s30vtx | |
600v 30a
Abstract: S30VT60 MAX05
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s30vt60s30vtx600v 30amax05 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS388 SOD-523 SCHOTTKY BARRIER DIODE FEATURES z Small pacakage z Low forward voltage z Low reverse current MARKING: S3 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ |
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od-5231ss388 | |
S30VTA160Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S30VTA160 CaseCase : 2F: SVTA Unit : mm 1600V 30A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ●Applicable to mount on glass-epoxy substrate APPLICATION ●Big Power Supply |
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s30vta160 | |
S3 DIODE schottky
Abstract: SOD882 S3 marking DIODE BAT54L Marking s3 Schottky barrier Marking "s3" Schottky barrier MARKING C SOD882
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m3d891bat54lod882mdb391+8 | |