DIODE S1 Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

Contextual Info: PIN DIODE MODULES PIN diode switches PIN DIODE SWITCHES Features TEMEX offers a complete series of Silicon PIN diode switches covering frequencies from 10MHz to 18 GHz in octave or multi-octave bandwidth. These units are available in packaged or surface mount version.

Contextual Info: Photo IC diode assemblies S10108, S10109 For flame eye, using photo IC diode instead of CdS cell The S10108 and S10109 sensors are designed specifically for flame detection flame eye in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of CdS cells and are available with 2 types of incident light

DS16BN

Abstract: DS16B LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 350 v 30 a diode rectifier DS-16B high voltage rectifier diode DIODE y 12 mitsubishi bridge rectifier
Contextual Info: MITSUBISHI RECTIFIER DIODE STACK ASSEMBLY DS16BN MEDIUM POWER RECTIFIER USE D E S C R IP T IO N O U T L IN E D R A W IN G Dim ension : mm Mitsubishi type D S1 6 B N series are Medium power rectifier diode stack assemblies using high reliability rectifier diode. These stack assemblies are

Contextual Info: PIN DIODE MODULES PIN diode switches - SPST SPST Electrical characteristics @ 25° C Model Direct Reverse Bias Bias S1B502 SRB502 S1D502 SRD502 S1B2004 SRB2004 S1D2004 SRD2004 S1B4008 SRB4008 S1D4008 SRD4008 Bias requirements: Direct bias: Frequency range

cds photo diode

Abstract: diode assembly
Contextual Info: PHOTO IC Photo IC diode assembly S10108, S10109 For flame eye/using photo IC diode RoHS compliance instead of CdS cell S10108 and S10109 sensors are designed specifically for flame detection (flame eye) in oil-fired hot water boilers and heaters. These sensors incorporate a photo IC diode instead of conventional CdS cells and are available with 2 types of incident light direction (head-on

DIODE K9

Contextual Info: S1A.S1M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /3 Surface mount diode Standard silicon rectifier diodes S1A.S1M  3

S10VT60

Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT60 Case : 2F: SVT Case Unit : mm 600V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

S10045

Abstract: violet laser diode chip
Contextual Info: Patent Pending PHOTODIODE Si PIN diode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its

Contextual Info: Patent Pending PHOTODIODE Si PIN diode S10044 For monitoring high-power red/infrared laser diode, surface mount type S10044 is a Si photodiode developed for accurately monitoring light output from a high-power red/infrared semiconductor laser diode. Its

Contextual Info: bhsa^ai QQ242S4 S13 • APX Philips Semiconductors — — N AMER PHILIPS/DISCRETE Silicon planar epitaxial high-speed diode DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications.

S15SC4M

Contextual Info: SHINDENGEN Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S15SC4M Case : MTO-3P Unit : mm 40V 15A FEATURES ● Tj150℃ ● PRRSM avalanche guaranteed ● Small θ jc ●High current capacity APPLICATION ● Switching power supply ●DC/DC converter

SIN15

Abstract: S15SCA4M
Contextual Info: SHINDENGEN Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S15SCA4M Case : TO-220 Unit : mm 40V 15A FEATURE FEATURES ● SMT ● Tj150℃ ● PRRSM avalanche guaranteed ● High current capacity with Small Package APPLICATION ● Switching power supply

SMD MARKING 541 DIODE

Abstract: smd diode 708 BA792 Diode smd code 805 SOD110 S4 SMD diode mark MCC SMD DIODE SMD MARK CODE s4 BP317 diode marking code 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L8 book, halfpage M3D178 BA792 Band-switching diode Product specification 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance: max. 1.1 pF

S15VT60

Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VT60 CaseCase : 2F: SVT Unit : mm 600V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

DIODE 10a 800v

Abstract: S10VTA80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VTA80 CaseCase : 2F: SVTA Unit : mm 800V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

A1402

Abstract: diode 10a 600v S10VTA60
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VTA60 CaseCase : 2F: SVTA Unit : mm 600V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

24 V 20 A diode

Abstract: power Diode 800V 5A S15VTA80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VTA80 CaseCase : 2F: SVTA Unit : mm 800V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

power Diode 800V 5A

Abstract: S15VT80
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VT80 CaseCase : 2F: SVT Unit : mm 800V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

DIODE 600V 15A

Abstract: S15VTA60 high Forward Voltage Diode
Contextual Info: SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S15VTA60 CaseCase : 2F: SVTA Unit : mm 600V 15A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ● High IFSM ● Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION

NX7300BA-CC

Abstract: NX7301BA-CC NX7302BA-CC NX7303BA-CC STM-16
Contextual Info: DATA SHEET LASER DIODE NX7300BA-CC 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR 2.5 Gb/s DESCRIPTION The NX7300BA-CC is a 1 310 nm Fabry-Perot FP laser diode coaxial module with single mode fiber. It has a Multiple Quantum Well (MQW) structure and a built-in InGaAs monitor photo diode.

marking code k1

Abstract: BAP51-02 smd marking KM
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance

SMP1352-040LF

Contextual Info: DATA SHEET • SMP1352-040LF DIODE DATA SHEET SMP1352-040LF: 0402 Surface Mount PIN Diode Applications • WLAN, WiMAX, cellular handsets  Cellular infrastructure  RFID readers  Test instruments  High isolation switches  Series diode switches