DIODE S 43A Search Results

Contextual Info: ADVANCED POWER Te c h n o l o g y 0 APT5012JNU2 500V 43A 0.12Í2 ISOTOP« S in gle Die M O S F E T and UltraFast Diode For "P FC Boost Circuits" POWER MOS IV' N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Parameter Symbol APT 5012JNU2

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

11N120CND

Contextual Info: HG TG 11N120CND S em iconductor Data Sheet April 1999 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The H GTG11N120CND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

APT53F80J

Abstract: MIC4452 J1-80
Contextual Info: APT53F80J 800V, 57A, 0.11Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT53F80J 800V, 53A, 0.13Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT53F80J 800V, 57A, 0.11Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

43a 504

Abstract: 17550 APT53F80J MIC4452
Contextual Info: APT53F80J 800V, 53A, 0.13Ω Max, trr ≤470ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: A d v a n ced P o w er Te c h n o l o g y O D wV o k APT5012JNU2 O s ISOTOP® POWER MOS IV< 500V 43A 0.120 Single Die M OSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS

APT5012JNU2

Abstract: ST-200 transformer DIODE BAT 17
Contextual Info: A d van ced R o w er Te c h n o l o g y APT5012JNU2 ISOTOP® 500V 43A 0.120 Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" P O W E R M O S IV ‘ N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd ' dm 1V m

Contextual Info: A dvanced P o w er Te c h n o l o g y O D O a APT5012JNU3 Os ISOTOP® P O W E R M O S IV< 500V 43A 0.12Í2 Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd

c 503 K

Abstract: lg ds 325
Contextual Info: A dvanced P o w er Te c h n o lo g y APT5012JNU3 500V 43A 0.120 ISOTOP* Single Die M O S F E T and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV N-CH A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS 'd All Ratings: Tc = 25°C unless otherwise specified.

Diode Marking ZM Motorola

Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
Contextual Info: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:

5012JN

Abstract: APT5012JNU3 APTS012JNU3 APT5012
Contextual Info: A dvanced P o w er Te c h n o l o g y O D O A rm m m APT5012JNU3 ISOTOP* 500V 43A 0.12£i Single Die MOSFET and UltraFast Diode For "PFC Buck Circuits" POWER MOS IV< N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratinnc- T

IRF3415

Abstract: K 9008
Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

IRFP3415

Contextual Info: PD - 93962 IRFP3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S HEXFET® Fifth Generation Power MOSFETs from

IRF34

Abstract: IRF3415 mosfet irf3415
Contextual Info: FOR REVIEW ONLY IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: A dvanced P o w er Te c h n o lo g y * APT5012JNU2 500V 43A 0.12Q o* £ 5% ISOTOP* POWER MOS IV' Single Die MOSFET and UltraFast Diode For "PFC Boost Circuits" N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

Contextual Info: PD - 91477E IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

IRF3415

Abstract: IRF3415 circuit IRF3415 equivalent 1810ms
Contextual Info: PD - 91477D IRF3415 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

IRF3415S

Abstract: AN-994 IRF3415 IRF3415L
Contextual Info: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A

AN-994

Abstract: IRF3415 IRF3415L IRF3415S
Contextual Info: PD - 91509C IRF3415S/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF3415S Low-profile through-hole (IRF3415L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS(on) = 0.042Ω G ID = 43A

Contextual Info: PD - 94963 IRF3415PbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 150V RDS on = 0.042" G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

f1010

Abstract: IRF3415PBF
Contextual Info: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94963 IRF3415PbF l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 150V RDS on = 0.042Ω G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier