DIODE S 335 Search Results

NX5304

Abstract: NX5306 NX6306 NX6306GH NX6306GK NX6306SH NX6306SK inGaAs
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor

Contextual Info: SÊ GEC P L E S S E Y S e p t e m b e r 1995 SEM IC O ND UC TO RS DS4086-2.2 TV30 RECTIFIER DIODE KEY PARAMETERS v RRM 2000V 335A *F A V 6000A ^FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

Contextual Info: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series

Contextual Info: DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6504S Series

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6306 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This

Contextual Info: DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This NX6301S Series

Contextual Info: LASER DIODE NX6309GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6309GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16 nec. 5.5 473
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series are 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

Contextual Info: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.

NX5501

Abstract: NX5304 NX5306 NX5307 NX6509 NX6509GH NX6509GK STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6509 Series 1 550 nm FOR 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6509 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are designed for 2.5 Gb/s: STM-16 (L-16.2) application and

Contextual Info: LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION DESCRIPTION The NX6308GH is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)

P1248

Abstract: NX6504 NX6504GH NX6504GI NX6504SH NX6504SI NX6504SJ NX6504SK
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6504 Series 1 550 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6504 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1,

NX6301

Abstract: NX6301GH NX6301GI NX6301SH NX6301SI NX6301SJ NX6301SK
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6301 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6301 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. This device is ideal for Synchronous Digital Hierarchy (SDH) system, STM-1,

Contextual Info: 5Ë GEC P L E S S E Y S E M I C O N D U C T O R S e p te m b e r 1996 S DS4219-2.3 DFB54 FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Qr APPLICATIONS • Power Supplies. ■ Freewheel Diode. ■ Battery Chargers. ■ D.C. Motor Control.

10667G

Abstract: ADN2843CHIPSET
Contextual Info: a 10.709Gb/s LASER DIODE DRIVER Chipset ADN2843 Preliminary Technical Data FEATURES Data Rates from 50Mb/s to 10.709Gb/s Typical rise/fall time 25/23 ps Bias Current range 3mA to 80 mA Modulation Current range 5mA to 80 mA µA to 1100µ µA Monitor Photo Diode current 50µ

nec. 5.5 473

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

NX5501

Abstract: NX5304 NX5306 NX5307 NX5504 NX6306 NX6307 NX6508 STM-16
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX6508 Series 1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM InGaAsP MQW-DFB LASER DIODE DESCRIPTION The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD. These devices are ideal for 2.5 Gb/s CWDM application.

msc diode

Contextual Info: 2 /avh + - KU7 S W - I* y j y a Schottky Barrier Diode Twin Diode O UTLINE D IM E N S IO N S SF20JC6 U nit • mm Package I FTO-220 10±0-2 <¿3.2-01 60V 20A 4.5 ±a 2.7±a: Date code nafe_ S o i1 5 Type No. VF20JC6 mu_ •T jl5 0 °C Polarity 2.7±a:

STM 125

Contextual Info: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy

NX6306

Abstract: NX6306GH NX6306GK NX6306SH NX6306SK
Contextual Info: PRELIMINARY DATASHEET NEC's 1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE NX6306 SERIES FOR 155 Mb/s and 622 Mb/s APPLICATIONS DESCRIPTION NEC's NX6306 Series is a 1 310 nm Multiple Quantum Well NX6306S Series MQW structured Distributed Feed-Back (DFB) laser diode

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. KEY PARAM ETERS 4500V RRM 2130 A ! f AV 20000A FSM 2200|iC V ■ Welding. Q. ■ High Frequency Rectification. ■ 6.0|IS

NX5304

Abstract: NX5306 NX5306EH NX5306EK NX5307 NX5501 NX5504 NX6306 STM-16
Contextual Info: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy

8035S

Contextual Info: M ITEL DSF8035SK Fast Recovery Diode SEMICONDUCTOR Supersedes July 1996 version, DS4412 - 1.2 DS4412 - 1.3 APPLICATIONS • March 1998 KEY PARAMETERS v RRM 3500V 335A Jf AV 3500A FSM 400(lC Q r 4.0(.is S nubber Diode For GTO Applications. FEATURES ■