DIODE RG 28 Search Results

laser diode bare chip

Abstract: laser diode chip 635nm
Contextual Info: SLD-635-P5-C-N-RG-300-04 UNION OPTRONICS CORP. 635nm Laser Diode Chips 635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-04 •Specifications 1 Size : (2) Device: (3) Structure: 300*300*100µm Laser diode bare chip Multi-step growth ■External dimensions(Unit : m)

1SV147

Abstract: toshiba lable information
Contextual Info: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1SV228

Contextual Info: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)

Si4852DY

Abstract: Si4852DY-T1
Contextual Info: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage

Si4852DY

Abstract: Si4852DY-T1 diode 0416
Contextual Info: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage

Si4852DY

Abstract: Si4852DY-T1
Contextual Info: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 FEATURES D LITTLE FOOTr Plus D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage

Contextual Info: Si4852DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 FEATURES rDS(on) (W) ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 D LITTLE FOOT Plust D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage

BSM300GA170DN2

Abstract: C67070-A2710-A67
Contextual Info: BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type VCE IC BSM300GA170DN2 E3166 1700V 440A Package

BSM300GA170DN2

Abstract: C67070-A2710-A67
Contextual Info: BSM300GA170DN2 E3166 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type VCE IC BSM300GA170DN2 E3166 1700V 440A Package Ordering Code SINGLE SWITCH 1

Si4837DY

Abstract: Si4837DY-T1
Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V

Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NDF10N60ZG

Abstract: 221AH H1AA1
Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

ndf05n50

Abstract: NDD05N50
Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NDF05N50ZG

Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NDD03N80Z-1G

Contextual Info: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX

Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOT Plust Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V

369AA

Contextual Info: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX

semikron skt 10

Contextual Info: SKT Tabl. 10,3 Qu RG bond. power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter Absolute Maximum Ratings Symbol Conditions 4/* " 5 *1( $%  -6.  ! *1( $%& ' ! *( ) 0 ! *1( $%

NDF10N60ZG

Abstract: NDF10N60ZH NDF10N60Z
Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Contextual Info: Si4837DY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) D TrenchFETr Power MOSFET D LITTLE FOOTr Plus Schottky D 100% Rg Tested ID (A) 0.020 @ VGS = - 10 V 8.3 0.030 @ VGS = - 4.5 V

NDF10N60ZG

Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com