DIODE RG 28 Search Results

1SV147

Abstract: toshiba lable information
Contextual Info: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

1SV228

Contextual Info: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)

BSM300GA170DN2

Abstract: C67070-A2710-A67
Contextual Info: BSM300GA170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 5.6 Ohm Type VCE IC BSM300GA170DN2 E3166 1700V 440A Package

NDF05N50ZG

Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

NDD03N80Z-1G

Contextual Info: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX

semikron skt 10

Contextual Info: SKT Tabl. 10,3 Qu RG bond. power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter Absolute Maximum Ratings Symbol Conditions 4/* " 5 *1( $%  -6.  ! *1( $%& ' ! *( ) 0 ! *1( $%

Contextual Info: SKT Tabl. 10,3 Qu RG sold. power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor Absolute Maximum Ratings Symbol Conditions .  /& "#$ (& $   2 3-(& '  4 (/& "#

Contextual Info: NDD03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX 800 V 4.5 W @ 10 V

Si4636DY

Abstract: Si4636DY-T1-E3
Contextual Info: New Product Si4636DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0085 at VGS = 10 V 17 0.0105 at VGS = 4.5 V 15.6 Qg (Typ)

Si4636DY

Abstract: Si4636DY-T1-E3 si4636
Contextual Info: New Product Si4636DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0085 at VGS = 10 V 17 0.0105 at VGS = 4.5 V 15.6 Qg (Typ)

Contextual Info: SKT Tabl. 10,3 Qu RG bond.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions 4/* " 5 *1( $%  -6.  ! *1( $%& ' ! *( ) 0 ! *1( $%  '8 8 '8, max. Units *&" (&/#   0 ! *1( $%

Contextual Info: SKT Tabl. 10,3 Qu RG sold.SEMIKRON, leading manufacturer of diode thyristor power semicondictor modules Absolute Maximum Ratings Symbol Conditions .  /& "#$ (& $   2 3-(& '  4 (/& "#   (/& "#$ %  (& ' .  (/& "#  %7 7 %7*

D304 diode

Abstract: tr/P45/D304 diode
Contextual Info: • International ^R ectifier MÖSSM52 QQlb771 037 ■ INR INTERNATIONAL RECTIFIER b5E D SERIES IRK.F132 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features F ast tu rn -o ff th y ris to r F a s t re c o v e ry d io d e High su rg e c a p a b ility

Contextual Info: • International H Rectifier 4655452 DGlt.755 ‘m INTERNATIONAL RECTIFIER *INR b5E » SERIES IRK.F102 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F a st tu rn -o ff th yristo r F a s t re c o v e ry d io d e H igh s u rg e c a p a b ility

scr fir 3d

Abstract: scr FIR 3D 41 E.78996 ir e.78996 ldms
Contextual Info: • . I Bulletin 127104 rev. A 09/97 In te rn a tio n a l TOR Rectifier IRK.F72. SERIES FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 71 A ■ Fast tu rn -o ff th y ris to r ■ Fast re c o v e ry d io d e ■ H igh s u rg e c a p a b ility

Contextual Info: I I Bulletin 127092 rev. A 09/97 International I0 R Rectifier IRK.F132. s e rie s FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 130 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H ig h s u rg e c a p a b ility

Contextual Info: I I Bulletin 127097 rev. A 09/97 International I0 R Rectifier IRK.F102. s e rie s FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 105 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H ig h s u rg e c a p a b ility

Contextual Info: I . I Bulletin 127099 rev. B 04/98 In te rn a tio n a l l R Rectifier IRK.F200. s e r i e s FAST THYRISTOR/DIODE and THYRISTOR/THYRISTOR MAGN-A-pak Power Modules Features • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H igh s u rg e c a p a b ility

Contextual Info: SLD301V Sony. lO O m W High Power Laser Diode D e scrip tion SLD 301V P a ck a g e O u tlin e is a g ain-gu ided , high-pow ered U n it : mm la se r d io d e fa b ric a te d by M O C V D . M O C V D : M e ta l O rg a n ic C h e m ic a l V a p o r D e p o sitio n

FD600

Abstract: 2m811
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FD 600 / 1200 R 17 KF6 55,2 M8 11,85 screwing depth max. 16 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 C2 16 18 53 G2 44 2,5 deep 57 E1 C2 C1 E2 E1

MJ 800

Abstract: fz 79 1500 mj800 IGBT module FZ 1200 R 17 KF6 C IGBT 1200A IGBT module FZ 1200 FZ 800 R 12 KF6
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FZ 1200 R 17 KF6 61,5 18 M8 screwing depth max. 8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C C G E E E external connection to be done 07.04.1998

4500a

Abstract: transistor VCE 900V
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 300 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 300 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values

GA170DL

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information BSM 400 GA 170 DL M6 28,5 22 23 ø6,4 16,1 13 2 3 24 20 29 93 106,4 2 1 5 3 07.05.1998 BSM 400 GA 170 DL vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values