DIODE MARKING X6 Search Results

Contextual Info: E R C 8 4 - 0 9 I3 A • W & ’+Sfe : Outline Drawings *> a ' y Y * - ' < * ) T y 4 * - V SCHO TTKY BARRIER DIODE Features • 1&VF Low VF Marking W $z7j\ : A 7 “- a - Super high speed switching. K : » C o lo r c o d e : B l u e A b r id g e d High reliability by planer design.

BAV70-A4

Abstract: Diode Marking z3 SOT-23 diode marking w8 BAV70A marking Z6 SOT-23 Capacitance BAS 20 SOT23 SOT23 DIODE marking CODE AV Z6 DIODE BAS16 BAV70
Contextual Info: FERRANTI 4 semiconductors BAV70 H ig h S peed S w itc h in g D io d e Pair C o m m o n C a th o d e DESCRIPTION These devices are intended fo r high speed switching applications. Encapsulated in th e popular SOT-23 package these devices are designed specifically fo r use in thin and thick film

zener diode xz 055

Abstract: zener diode xb XZ 068 Zener diode x6 xl marking sod-323 CMDZ5261B X8 zener ZENER diode Y8 CMDZ5231B CMDZ5258B
Contextual Info: Central CMDZ5221B THRU CMDZ5261B TM Semiconductor Corp. SUPERminiTM SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a

CMDZ5254B

Contextual Info: CMDZ5221B THRU CMDZ5261B SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a super-mini surface mount

X8 zener

Abstract: X5 555 Zener diode x6 CMDZ5221B CMDZ5222B CMDZ5223B CMDZ5224B CMDZ5225B CMDZ5226B CMDZ5227B
Contextual Info: CMDZ5221B THRU CMDZ5261B SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a super-mini surface mount

Contextual Info: TVS Diode Arrays SPA Diodes Low Capacitance ESD Protection - SP3030 Series SP3030 Series 0.5pF 20kV Unidirectional Discrete TVS RoHS Pb GREEN Description The SP3030 includes low capacitance rail to rail diodes with an additional Zener diode to provide protection for

SM05-02HTG

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SM05 through SM36 SM Series 400W TVS Diode Array RoHS Pb GREEN Description The SM series can absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international

IT8783F

Abstract: it8783 marking v02 IT878 ITE Tech 0607-XXX ITE PCI printer port controller ISA bios 8042 intel kbc MARK V02
Contextual Info: IT8783F Environment Control – Low Pin Count Input / Output EC - LPC I/O Preliminary Specification V0.2 (For A Version) ITE TECH. INC. This specification is subject to Change without notice. It is provided “AS IS” and for reference only. For purchasing information, please contact the nearest sales representatives.

Diode Marking z3 SOT-23

Abstract: schottky diode marking A7 Y1 SOT-23 marking code X5 SOT23 SOT-23 MARKING w5 X2 marking code sot 23 MARKING X4 SOT23 marking C20 sot-23 sot marking code w7 Z4 SOT23
Contextual Info: SCHOTTKY BARRIER DIODES TABLE 7 - SILICON PLANAR EPITAXIAL SCH O TTKY BARRIER DIODES The construction of these epitaxial, planar, passivated diodes utilises a Schottky barrier resulting in devices which have a high breakdown voltage and ultra fast switching capabilities.

TPS53661

Contextual Info: CSD95372BQ5M SLPS499 – MARCH 2014 CSD95372BQ5M Synchronous Buck NexFET Smart Power Stage 1 Features 2 Applications • • • • • • • 1 • • • • • • • • • • • • • 60 A Continuous Operating Current Capability 93.4% System Efficiency at 30 A

TPS53661

Contextual Info: CSD95372BQ5M SLPS499 – MARCH 2014 CSD95372BQ5M Synchronous Buck NexFET Smart Power Stage 1 Features 2 Applications • • • • • • • 1 • • • • • • • • • • • • • 60 A Continuous Operating Current Capability 93.4% System Efficiency at 30 A

TPS53661

Contextual Info: CSD95372BQ5M SLPS499 – MARCH 2014 CSD95372BQ5M Synchronous Buck NexFET Smart Power Stage 1 Features 2 Applications • • • • • • • 1 • • • • • • • • • • • • • 60 A Continuous Operating Current Capability 93.4% System Efficiency at 30 A

HP 2630 optocoupler

Abstract: HP 2601 hp 2631 hp 2611 HP 2601 optocoupler OPTOCOUPLER hp 2631 HP 4661 optocoupler HP 2630 hp 2631 010 HP 4661
Contextual Info: H High CMR, High Speed TTL Compatible Optocouplers 6N137 HCNW137 HCNW2601 HCNW2611 HCPL-0600 HCPL-0601 HCPL-0611 HCPL-0630 Technical Data Features • 5 kV/µs Minimum Common Mode Rejection CMR at VCM = 50 V for HCPL-X601/ X631, HCNW2601 and 10 kV/µs Minimum CMR at

hp 2611

Abstract: HP 2630 optocoupler HP 2601 optocoupler OPTOCOUPLER HP 2631 HP 2601 hp 2630 hp 2631 ic HP 2631 HP 2612 optocoupler HP 2611 optocoupler
Contextual Info: High CMR, High Speed TTL Compatible Optocouplers 6N137 HCNW137 HCNW2601 HCNW2611 HCPL-0600 HCPL-0601 HCPL-0611 HCPL-0630 Technical Data Features • 5 kV/µs Minimum Common Mode Rejection CMR at VCM = 50 V for HCPL-X601/ X631, HCNW2601 and 10 kV/ µs Minimum CMR at

HP 2601

Abstract: hp 2631 HP 2630 optocoupler hp 2611 HP 2601 optocoupler OPTOCOUPLER hp 2631 7 pin pulse transformer HP 2630 2030 ic 8pin 6N137
Contextual Info: H High CMR, High Speed TTL Compatible Optocouplers 6N137 HCNW137 HCNW2601 HCNW2611 HCPL-0600 HCPL-0601 HCPL-0611 HCPL-0630 Technical Data Features • 5 kV/µs Minimum Common Mode Rejection CMR at VCM = 50 V for HCPL-X601/ X631, HCNW2601 and 10 kV/µs Minimum CMR at

HP 2630 optocoupler

Abstract: hp 2631 A 2631 optocoupler 6N137 OPTOCOUPLER hp 2631 HCNW137 HCNW2601 HCNW2611 HCPL-0600 HCPL-0601
Contextual Info: High CMR, High Speed TTL Compatible Optocouplers 6N137 HCNW137 HCNW2601 HCNW2611 HCPL-0600 HCPL-0601 HCPL-0611 HCPL-0630 Technical Data Features • 5 kV/µs Minimum Common Mode Rejection CMR at VCM = 50 V for HCPL-X601/ X631, HCNW2601 and 10 kV/µs Minimum CMR at

Contextual Info: PD - 9.1357A International IOR Rectifier IRLZ24N PRELIMINARY HEXFET Power MOSFET • • • • • • Logic-Level G ate Drive A dvanced Process Technology Dynam ic dv/dt Rating 175°C O perating Tem perature Fast Switching Fully A valanche Rated V dss = 5 5 V

AG qd transistor SMD

Abstract: transistor ag qs
Contextual Info: SIEMENS SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPUX6N60S5 600 V 4.5 A Pin 1

IRLMS6702

Contextual Info: PD - 91414C IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET D D G Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

smd diode 2ba

Abstract: yt 1208 diode Zener diode smd marking code WN Zener diode smd marking code nu DIODE smd marking CODE NZ Zener diode smd marking code .18 marking code y2 SMD Transistor marking LZ smd diode SOD323 marking code ya SMD Transistor smd diode code B2
Contextual Info: PZUxBA series Single Zener diodes Rev. 01 — 19 September 2008 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323 SC-76 very small Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power

negative voltage regulator, 48V

Abstract: IRF3710 LTC4354 LTC4354CDDB LTC4354CS8 LTC4354IDDB LTC4354IS8 MBR10100 irf3710 1A marking GB SOT 23
Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor U FEATURES DESCRIPTIO • The LTC 4354 is a negative voltage diode-OR controller that drives two external N-channel MOSFETs. It replaces two Schottky diodes and the associated heatsink, saving power and area. The power dissipation is greatly reduced

Contextual Info: LTC4354 Negative Voltage Diode-OR Controller and Monitor DESCRIPTION FEATURES n n n n n n n n n Controls N-Channel MOSFETs Replaces Power Schottky Diodes Less Than 1µs Turn-off Time Limits Peak Fault Current 80V Operation Smooth Switchover without Oscillation

Micro6 Package

Abstract: IRLMS5703
Contextual Info: PD - 91413E IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

TPS53640

Contextual Info: CSD95372AQ5M www.ti.com SLPS416 – JUNE 2013 Synchronous Buck NexFET Power Stage FEATURES APPLICATIONS • • • • • • • • • • • • • • • 1 23 • • 60A Continuous Operating Current Capability 92.4% System Efficiency at 30A Ultra Low Power Loss of 3.3W at 30A